FILM-FORMING COMPOSITION, RESIST UNDERLAYER FILM, METHOD OF FORMING FILM, METHOD OF FORMING RESIST PATTERN, METHOD OF FORMING ORGANIC-UNDERLAYER-FILM REVERSE PATTERN, METHOD OF PRODUCING FILM-FORMING COMPOSITION, AND METHOD OF FORMING METAL-CONTAINING FILM PATTERN

1 . A film-forming composition comprising:

a metal compound;

a nitrogen-containing organic compound; and

a solvent, wherein

the nitrogen-containing organic compound is: a first compound comprising a nitrogen atom, an aliphatic hydrocarbon group, and at least two hydroxy groups; a second compound comprising a nitrogen-containing aromatic heterocycle and at least one hydroxy group; or a mixture thereof.

2 . The film-forming composition according to claim 1 , wherein the nitrogen-containing organic compound is coordinated to a metal atom in the metal compound, or is free from a metal atom in the metal compound.

3 . The film-forming composition according to claim 1 , wherein the first compound is represented by formula (1):

wherein, in the formula (1), (m+n) is 3, m is 2 or 3, and n is 0 or 1; R 1 represents a divalent aliphatic hydrocarbon group having 1 to 10 carbon atoms, wherein a plurality of R 1 s are identical or different from each other; and R 2 represents a hydrogen atom, a monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms, or a group represented by formula (1-1):

wherein, in the formula (1-1), R 2A represents a divalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; R 2B and R 1C each independently represent a hydrogen atom, a monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms, or —R 2D —OH, wherein R 2D represents a divalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; p is an integer of 1 to 4, wherein in a case in which p is no less than 2, a plurality of R 2A s are identical or different from each other, and a plurality of R 2C s are identical or different from each other; and * denotes a site bonding to the nitrogen atom in the formula (1).

4 . The film-forming composition according to claim 1 , wherein the second compound comprises:

at least one divalent aliphatic hydrocarbon group having 1 to 10 carbon atoms bonded to the nitrogen-containing aromatic heterocycle; and

at least one hydroxy group bonded to each of the at least one divalent aliphatic hydrocarbon group.

5 . The film-forming composition according to claim 1 , wherein a metal atom in the metal compound belongs to period 3 to period 7 of group 2 to group 14 in periodic table.

6 . The film-forming composition according to claim 5 , wherein the metal atom belongs to group 4 in the periodic table.

7 . The film-forming composition according to claim 1 , which is suitable for forming a resist underlayer film.

8 . The film-forming composition according to claim 1 , which is suitable for forming an organic-underlayer-film reverse pattern.

9 . A resist underlayer film formed from the film-forming composition according to claim 1 .

10 . A method of forming a film, the method comprising applying the film-forming composition according to claim 1 directly or indirectly on a substrate.

11 . A method of forming a resist pattern, the method comprising:

applying the film-forming composition according to claim 1 directly or indirectly on a substrate to form a resist underlayer film;

applying an organic-resist-film-forming composition directly or indirectly on the resist underlayer film to form an organic resist film;

exposing the organic resist film to a radioactive ray; and

developing the organic resist film exposed.

12 . The method according to claim 11 , wherein the nitrogen-containing organic compound is coordinated to a metal atom in the metal compound, or is free from a metal atom in the metal compound.

13 . The method according to claim 11 , wherein the nitrogen-containing organic compound comprises the first compound represented by formula (1):

wherein, in the formula (1), (m+n) is 3, m is 2 or 3, and n is 0 or 1; R 1 represents a divalent aliphatic hydrocarbon group having 1 to 10 carbon atoms, wherein a plurality of R 1 s are identical or different from each other; and R 2 represents a hydrogen atom, a monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms, or a group represented by formula (1-1):

wherein, in the formula (1-1), R 2A represents a divalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; R 2B and R 1C each independently represent a hydrogen atom, a monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms, or —R 2D —OH, wherein R 2D represents a divalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; p is an integer of 1 to 4, wherein in a case in which p is no less than 2, a plurality of R 2A s are identical or different from each other, and a plurality of R 2C s are identical or different from each other; and * denotes a site bonding to the nitrogen atom in the formula (1).

14 . The method according to claim 11 , wherein the nitrogen-containing organic compound comprises a second compound comprising:

at least one divalent aliphatic hydrocarbon group having 1 to 10 carbon atoms bonded to the nitrogen-containing aromatic heterocycle; and

at least one hydroxy group bonded to each of the at least one divalent aliphatic hydrocarbon group.

15 . The method according to claim 11 , wherein a metal atom in the metal compound belongs to period 3 to period 7 of group 2 to group 14 in periodic table.

16 . The method according to claim 15 , wherein the metal atom belongs to group 4 in the periodic table.

17 . A method of forming an organic-underlayer-film reverse pattern, the method comprising:

forming an organic underlayer film directly or indirectly on a substrate;

forming a resist pattern directly or indirectly on the organic underlayer film;

forming an organic-underlayer-film pattern on the organic underlayer film by carrying out etching using the resist pattern as a mask;

forming an organic-underlayer-film-reverse-pattern-forming film directly on the organic-underlayer-film pattern by applying an organic-underlayer-film-reverse-pattern-forming composition; and

forming an organic-underlayer-film reverse pattern by removing the organic-underlayer-film pattern, wherein

the organic-underlayer-film-reverse-pattern-forming composition comprises:

a metal compound;

a nitrogen-containing organic compound; and

a solvent, wherein

the nitrogen-containing organic compound is: a first compound comprising a nitrogen atom, an aliphatic hydrocarbon group, and at least two hydroxy groups; a second compound comprising a nitrogen-containing aromatic heterocycle and at least one hydroxy group; or a mixture thereof.

18 . A method of producing a film-forming composition, the method comprising:

mixing a metal alkoxide with a nitrogen-containing organic compound to obtain a mixture; and

adding water to the mixture, wherein

the nitrogen-containing organic compound is: a first compound comprising a nitrogen atom, an aliphatic hydrocarbon group, and at least two hydroxy groups; a second compound comprising a nitrogen-containing aromatic heterocycle and at least one hydroxy group; or a mixture thereof.

19 . A method of forming a metal-containing film pattern, the method comprising:

applying a metal-containing-film-forming composition directly or indirectly on a substrate;

forming an organic underlayer film directly or indirectly on a metal-containing film formed by applying the metal-containing-film-forming composition;

forming a resist pattern directly or indirectly on the organic underlayer film; and

forming a pattern on the metal-containing film by carrying out etching using the resist pattern as a mask, wherein

the metal-containing-film-forming composition is the film-forming composition according to claim 1 .