Optoelectronic device including morphological stabilizing layer
View Patent ↗An organic electronic device comprises a substrate, at least one morphological stabilizing layer positioned over the substrate, the morphological stabilizing layer comprising a material having a T g greater than 50° C., and at least one organic layer positioned in direct contact with the morphological stabilizing layer. A method of making an organic electronic device is also disclosed.
1. An organic electronic device, comprising:
a substrate;
at least one morphological stabilizing layer positioned over the substrate, the morphological stabilizing layer comprising a material having a T g greater than 50° C.; and
at least one organic emissive layer positioned in direct contact with the morphological stabilizing layer;
wherein the morphological stabilizing layer improves the horizontal dipole alignment of the organic emissive layer by at least 3%.
2. The organic electronic device of claim 1 , wherein the at least one morphological stabilizing layer has a thickness of less than 50 nm.
3. The organic electronic device of claim 2 , wherein the at least one morphological stabilizing layer has a thickness of less than 30 nm.
4. The organic electronic device of claim 1 , wherein the at least one morphological stabilizing layer is positioned within the at least one organic layer.
5. The organic electronic device of claim 1 , wherein the at least one morphological stabilizing layer is positioned directly on a surface of the at least one organic layer.
6. The organic electronic device of claim 1 , wherein the material in the morphological stabilizing layer has a glass transition temperature higher than 90° C.
7. The organic electronic device of claim 1 , wherein the at least one organic layer forms part of an organic thin film transistor.
8. The organic electronic device of claim 7 , wherein the at least one organic layer is a channel body of an organic thin film transistor.
9. The organic electronic device of claim 1 , wherein the at least one organic layer comprises a heterojunction bilayer.
10. A method of making an organic electronic device, comprising:
providing a substrate;
depositing a morphological stabilizing layer over the substrate;
depositing at least one organic emissive layer directly on top of the over the morphological stabilizing layer; and
annealing the morphological stabilizing layer and the organic emissive layer at an annealing temperature of at least 50° C. for an annealing duration of at least 30 minutes, causing an improvement of at least 3% in the horizontal dipole alignment of the organic emissive layer.
11. The method of claim 10 , wherein the glass transition temperature of at least one material in the morphological stabilizing layer is higher than 50° C.
12. The method of claim 10 , wherein the annealing temperature is at least 80° C.
13. The method of claim 10 , wherein the annealing duration is at least two hours.
14. The method of claim 10 , wherein the annealing temperature is between 90° C. and 100° C.
15. The method of claim 10 , wherein the annealing duration is between 150 minutes and 210 minutes.
16. The method of claim 10 , further comprising depositing a second organic layer between the substrate and the morphological stabilizing layer.
17. The method of claim 11 , wherein the glass transition temperature of the at least one material in the morphological stabilizing layer is higher than 90° C.