Bridge chip with through via

1. A structure, comprising:

a bridge chip attached to at least a first chip and a second chip, wherein the bridge chip comprises at least one conductive through via connecting the bridge chip to one of the first chip and the second chip, wherein the at least one conductive through via extends completely through the bridge chip, and wherein the bridge chip directly contacts both the first chip and the second chip.

2. The structure of claim 1 , wherein a sidewall along a top portion of the at least one conductive through via is joined by a step to a sidewall along a bottom portion of the at least one conductive through via.

3. The structure of claim 1 , wherein the top portion of the at least one conductive through via has a width W1 CONDUCTIVE VIA and the bottom portion of the at least one conductive through via has a width W2 CONDUCTIVE VIA , and wherein W1 CONDUCTIVE VIA >W2 CONDUCTIVE VIA .

4. The structure of claim 1 , wherein the bridge chip further comprises:

a wiring layer having metal lines present between a first capping layer and a second capping layer.

5. The structure of claim 4 , wherein the at least one conductive through via directly contacts a top surface, and a sidewall of at least one of the metal lines.

6. The structure of claim 4 , wherein the at least one conductive through via directly contacts only a sidewall of at least one of the metal lines.

7. The structure of claim 1 , wherein the first chip and the second chip comprise metal pads, and wherein the at least one conductive through via directly contacts at least one of the metal pads.

8. The structure of claim 1 , wherein the first chip and the second chip have different heights from one another.

9. The structure of claim 1 , wherein the first chip and the second chip are selected from the group consisting of: memory chips, logic chips, and combinations thereof.

10. The structure of claim 1 , further comprising:

an encapsulant disposed over the bridge chip, the first chip and the second chip.

11. The structure of claim 10 , further comprising:

a laminate package; and

conductive through mold vias present in the encapsulant that connect the first chip and the second chip to the laminate package.

12. The structure of claim 1 , further comprising:

at least one third chip attached to the bridge chip and in contact with an end of the at least one conductive through via opposite the first chip and the second chip.

13. The structure of claim 12 , wherein the at least one third chip is a memory chip or a logic chip.

14. A structure comprising:

a bridge chip attached to at least a first chip and a second chip, wherein the bridge chip comprises at least one conductive through via connecting the bridge chip to one of the first chip and the second chip, and a wiring layer having metal lines present between a first capping layer and a second capping layer, wherein the at least one conductive through via directly contacts at least a sidewall of at least one of the metal lines, wherein the at least one conductive through via extends completely through the bridge chip, and wherein the bridge chip directly contacts both the first chip and the second chip.

15. The structure of claim 14 , wherein the at least one conductive through via directly contacts a top surface, and a sidewall of at least one of the metal lines.

16. The structure of claim 14 , wherein the at least one conductive through via directly contacts only a sidewall of at least one of the metal lines.

17. The structure of claim 14 , further comprising:

an encapsulant disposed over the bridge chip, the first chip and the second chip;

a laminate package; and

conductive through mold vias present in the encapsulant that connect the first chip and the second chip to the laminate package.

18. The structure of claim 14 , further comprising:

at least one third chip attached to a side of the bridge chip opposite the first chip and the second chip, wherein the at least one conductive through via is in contact with the at least one third chip.

19. A method of integrating chips, the method comprising:

forming a bridge chip comprising at least one via present in a substrate, a first capping layer disposed on the substrate, a wiring layer having metal lines disposed on the first capping layer, and a second capping layer disposed on the wiring layer, wherein the at least one via is filled with a sacrificial material;

placing the bridge chip over at least a first chip and a second chip;

removing the sacrificial material from the at least one via;

extending the at least one via through the first capping layer, the wiring layer and the second capping layer down to the first chip and the second chip; and

filling the at least one via with at least one metal to form at least one conductive through via, wherein the at least one conductive through via directly contacts at least a sidewall of at least one of the metal lines, and wherein the at least one conductive through via connects the bridge chip to one of the first chip and the second chip.

20. The method of claim 19 , further comprising:

attaching at least one third chip to a side of the bridge chip opposite the first chip and the second chip, wherein the at least one conductive through via is in contact with the at least one third chip.