Hybrid memory device and method of forming the same
View Patent ↗A memory array includes hybrid memory cells, wherein each hybrid memory cell includes a transistor-type memory including a memory film extending on a gate electrode; a channel layer extending on the memory film; a first source/drain electrode extending on the channel layer; and a second source/drain electrode extending along the channel layer; and a resistive-type memory including a resistive memory layer, wherein the resistive memory layer extends between the second source/drain electrode and the channel layer.
1. A memory array comprising:
a plurality of hybrid memory cells, wherein each hybrid memory cell of the plurality of hybrid memory cells comprises:
a transistor-type memory comprising:
a memory film extending on a gate electrode;
a channel layer extending on the memory film;
a first source/drain electrode extending on the channel layer; and
a second source/drain electrode extending along the channel layer; and
a resistive-type memory comprising:
a resistive memory layer, wherein the resistive memory layer extends between the second source/drain electrode and the channel layer.
2. The device of claim 1 , wherein the memory film is a different material than the resistive memory layer.
3. The device of claim 1 , wherein the resistive memory layer comprises a phase-change memory material.
4. The device of claim 1 , wherein the resistive memory layer comprises a metal oxide.
5. The device of claim 1 , wherein the memory film comprises a ferroelectric material.
6. The device of claim 1 , wherein the gate electrode is a word line of the memory array, the first source/drain electrode is a source line of the memory array, and the second source/drain electrode is a bit line of the memory array.
7. The device of claim 1 , wherein a first hybrid memory cell of the plurality of hybrid memory cells is over a second hybrid memory cell of the plurality of hybrid memory cells, wherein the resistive memory layer of the first hybrid memory cell and the resistive memory layer of the second hybrid memory cell are the same continuous layer.
8. The device of claim 1 , wherein the resistive-type memory of a third hybrid memory cell of the plurality of hybrid memory cells is laterally offset from the resistive-type memory of a fourth hybrid memory cell of the plurality of hybrid memory cells.
9. The device of claim 1 , wherein the resistive memory layer has a thickness in a range from 3 nm to 20 nm.
10. The device of claim 1 , wherein the resistive memory layer encircles the second source/drain electrode.
11. A device comprising:
a semiconductor substrate;
a word line extending over the semiconductor substrate;
a ferroelectric memory layer extending along the word line, wherein the ferroelectric memory layer contacts the word line;
an oxide semiconductor (OS) layer extending along the ferroelectric memory layer, wherein the ferroelectric memory layer is between the oxide semiconductor (OS) layer and the word line;
a plurality of source lines extending along the ferroelectric memory layer, wherein the ferroelectric memory layer is between the plurality of source lines and the word line;
a plurality of bit lines extending along the ferroelectric memory layer, wherein the ferroelectric memory layer is between the plurality of bit lines and the word line; and
a plurality of resistive memory layers, wherein each resistive memory layer of the plurality of resistive memory layers is between a respective bit line of the plurality of bit lines and the word line.
12. The device of claim 11 , wherein the plurality of resistive memory layers comprise a transitional metal oxide.
13. The device of claim 11 , wherein each resistive memory layer of the plurality of resistive memory layers laterally surrounds the respective bit line of the plurality of bit lines.
14. The device of claim 11 , wherein the plurality of resistive memory layers physically contact the oxide semiconductor (OS) layer.
15. The device of claim 11 further comprising a dielectric material extending along the ferroelectric memory layer between source lines of the plurality of source lines and adjacent bit lines of the plurality of bit lines, wherein the plurality of resistive memory layers physically contact the dielectric material.
16. A method comprising:
patterning a first trench extending through a first conductive line;
depositing a memory film capable of memory storage along sidewalls and a bottom surface of the first trench;
depositing an oxide semiconductor (OS) layer over the memory film, wherein the OS layer extends along the sidewalls and the bottom surface of the first trench;
depositing a first dielectric material on the OS layer, wherein the first dielectric material fills the remaining portion of the first trench;
patterning a second trench in the first dielectric material;
depositing a resistive memory material on sidewalls of the second trench; and
depositing a first conductive material on the resistive memory material within the second trench, wherein the first conductive material fills the second trench.
17. The method of claim 16 further comprising, after patterning the first trench, forming a lateral recess in the first conductive line, wherein the memory film is deposited within the lateral recess.
18. The method of claim 17 further comprising performing an etching process to remove portions of the memory film.
19. The method of claim 16 further comprising:
patterning a third trench in the first dielectric material; and
depositing a second conductive material within the third trench, wherein the second conductive material fills the third trench.
20. The method of claim 16 , wherein depositing the resistive memory material comprises depositing a metal oxide using atomic layer deposition (ALD).