Photoelectric conversion element, light-receiving element including the same, photoelectric conversion apparatus, mobile unit, method for manufacturing photoelectric conversion film, and method for manufacturing photoelectric conversion element
An embodiment according to the present disclosure provides a photoelectric conversion element including a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a first region, a second region disposed between the first region and the second electrode, and a third region that is disposed between the second region and the second electrode and that is in contact with the second region, the inorganic ligand ratio in the second region is higher than the inorganic ligand ratio in the first region, the inorganic ligand ratio at the interface of the third region to the second region is lower than the inorganic ligand ratio in the first region, and the inorganic ligand ratio in the second region increases with increasing proximity to the third region.
1. A photoelectric conversion element comprising:
a first electrode;
a second electrode; and
a photoelectric conversion layer disposed between the first electrode and the second electrode,
wherein the photoelectric conversion layer includes a first region, a second region disposed between the first region and the second electrode, and a third region that is disposed between the second region and the second electrode and that is in contact with the second region,
an inorganic ligand ratio in the second region is higher than an inorganic ligand ratio in the first region,
an inorganic ligand ratio at the interface of the third region to the second region is lower than the inorganic ligand ratio in the first region, and
the inorganic ligand ratio in the second region increases with increasing proximity to the third region.
2. The photoelectric conversion element according to claim 1 , wherein the inorganic ligand ratio in the second region monotonously increases with increasing proximity to the third region.
3. The photoelectric conversion element according to claim 1 , wherein a difference between a maximum value of the inorganic ligand ratio in the second region and the minimum value of the inorganic ligand ratio in the second region is less than a difference between the maximum value of the inorganic ligand ratio in the second region and the average value of the inorganic ligand ratio in the third region.
4. The photoelectric conversion element according to claim 1 , wherein the inorganic ligand ratio in the first region increases with increasing proximity to the second region.
5. The photoelectric conversion element according to claim 4 , wherein an increase rate of the inorganic ligand ratio in the first region is more than the increase rate of the inorganic ligand ratio in the second region.
6. The photoelectric conversion element according to claim 1 , wherein a thickness of the first region in the direction from the first electrode toward the second electrode is more than a thickness of the second region.
7. The photoelectric conversion element according to claim 1 , wherein the total of a thickness of the first region and a thickness of the second region is more than a thickness of the third region.
8. The photoelectric conversion element according to claim 1 , wherein the standard deviation of the inorganic ligand ratio in the first region is less than the standard deviation of the inorganic ligand ratio in the second region.
9. The photoelectric conversion element according to claim 1 , wherein the standard deviation of the inorganic ligand ratio in the second region is more than the standard deviation of the inorganic ligand ratio in the third region.
10. The photoelectric conversion element according to claim 1 , wherein the inorganic ligand is a ligand having a halogen atom.
11. The photoelectric conversion element according to claim 1 , wherein the inorganic ligand is a ligand selected from the group consisting of lead fluoride, lead chloride, lead iodide, lead bromide, and tetrabutylammonium iodide.
12. The photoelectric conversion element according to claim 10 , wherein a maximum peak in TOF-SIMS attributed to a halogen atom in the second region is higher than a maximum peak in TOF-SIMS attributed to a halogen atom in the first region.
13. The photoelectric conversion element according to claim 10 , wherein a maximum peak in TOF-SIMS attributed to a halogen atom in the third region is lower than a maximum peak in TOF-SIMS attributed to a halogen atom in the first region.
14. The photoelectric conversion element according to claim 1 ,
wherein a first photoelectric conversion layer and a second photoelectric conversion layer are included between the first electrode and the second electrode, the second photoelectric conversion layer being disposed between the first photoelectric conversion layer and the second electrode,
the first region and the second region are included in the first photoelectric conversion layer, and
the third region is included in the second photoelectric conversion layer.
15. The photoelectric conversion element according to claim 14 , wherein a maximum peak in TOF-SIMS attributed to a halogen atom in the first photoelectric conversion layer is higher than a maximum peak in TOF-SIMS attributed to a halogen atom in the second photoelectric conversion layer.
16. An imaging element comprising:
the photoelectric conversion element according to claim 1 ; and
a signal processing circuit connected to the photoelectric conversion element.
17. A photoelectric conversion apparatus comprising:
an optical system including a plurality of lenses; and
a light-receiving element to receive the light passed through the optical system,
wherein the light-receiving element includes the photoelectric conversion element according to claim 1 .
18. A mobile unit comprising:
a bodywork provided with the photoelectric conversion element according to claim 1 ; and
a moving device to move the bodywork.