IP Library › Granted Patent US 11,579,648
Granted Patent B2
US 11,579,648 · App. 17/535,206 · Granted Feb 14, 2023

Voltage regulator with power rail tracking

Inventors: Haruki Mori (Hsinchu, TW); Hidehiro Fujiwara (Hsinchu, TW); Zhi-Hao Chang (Yunlin County, TW); Yangsyu Lin (New Taipei, TW); Yu-Hao Hsu (Tainan, TW); Yen-Huei Chen (Jhudong Township, TW); Hung-Jen Liao (Hsinchu, TW); Chiting Cheng (Taichung, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
G05F3/24G05F1/10G06F1/28H01L23/5286H01L27/092
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Quick Facts
Patent No.
US 11,579,648
App. No.
17/535,206
Granted
Feb 14, 2023
Kind
B2
Abstract

Disclosed herein are related to an integrated circuit to regulate a supply voltage. In one aspect, the integrated circuit includes a metal rail including a first point, at which a first functional circuit is connected, and a second point, at which a second functional circuit is connected. In one aspect, the integrate circuit includes a voltage regulator coupled between the first point of the metal rail and the second point of the metal rail. In one aspect, the voltage regulator senses a voltage at the second point of the metal rail and adjusts a supply voltage at the first point of the metal rail, according to the sensed voltage at the second point of the metal rail.

Claims (51)

1. An integrated circuit comprising:

a single metal rail including a first point and a second point;

one or more functional circuits coupled to the single metal rail between the first point and the second point; and

a transistor including:

a gate electrode coupled to the first point of the single metal rail to provide a supply voltage, and

a drain electrode coupled to the second point of the single metal rail, the transistor configured to adjust the supply voltage according to a voltage sensed at the second point.

2. The integrated circuit of claim 1 , wherein the transistor is configured to detect the voltage at the second point due to one or more parasitic resistances of the single metal rail.

3. The integrated circuit of claim 1 , wherein the transistor includes a source electrode coupled to another metal rail to receive another supply voltage, the transistor is configured to generate the supply voltage according to the another supply voltage.

4. The integrated circuit of claim 3 , further comprising:

another transistor coupled between the single metal rail and the another metal rail in parallel with the transistor, the transistor being a first type of transistor, the another transistor being a second type of transistor.

5. The integrated circuit of claim 4 , further comprising:

an additional metal rail; and

a switch coupled between the additional metal rail and the another metal rail, the switch configured to selectively provide the another supply voltage to the another metal rail.

6. The integrated circuit of claim 5 , wherein a gate electrode of the another transistor is coupled to the another metal rail.

7. The integrated circuit of claim 5 , wherein a gate electrode of the another transistor is coupled to the additional metal rail.

8. The integrated circuit of claim 5 , wherein the another supply voltage is higher than the supply voltage.

9. The integrated circuit of claim 8 ,

wherein the transistor is a P-type transistor, and

wherein the another transistor is a N-type transistor.

10. The integrated circuit of claim 5 , wherein the another supply voltage is lower than the supply voltage.

11. The integrated circuit of claim 10 ,

wherein the transistor is a N-type transistor, and

wherein the another transistor is a P-type transistor.

12. An integrated circuit comprising:

a switch coupled between a first metal rail and a second metal rail; and

a first transistor coupled between the second metal rail and a third metal rail, the third metal rail coupled to one or more functional circuits, the first transistor configured to:

adjust its transconductance based on a voltage difference between i) a first supply voltage at the first metal rail or a second supply voltage at the second metal rail, and ii) a third supply voltage at the third metal rail, and

regulate the third supply voltage according to the adjusted transconductance.

13. The integrated circuit of claim 12 , wherein the first transistor includes:

a gate electrode coupled to the first metal rail or the second metal rail,

a source electrode coupled to the third metal rail, and

a drain electrode coupled to the second metal rail.

14. The integrated circuit of claim 12 , further comprising:

a second transistor coupled in parallel with the first transistor between the second metal rail and the third metal rail.

15. The integrated circuit of claim 14 , wherein the first transistor is a first type of transistor, and the second transistor is a second type of transistor.

16. The integrated circuit of claim 14 ,

wherein the one or more functional circuits are coupled between a first point of the third metal rail and a second point of the third metal rail, and

wherein the second transistor includes:

a gate electrode coupled to the second point of the third metal rail,

a drain electrode coupled to the first point of the third metal rail, and

a source electrode coupled to the second metal rail.

17. A method comprising:

detecting, by a transistor, a change in a first supply voltage supplied along a first metal rail;

adjusting, by the transistor, a transconductance of the transistor based on a voltage difference between the first supply voltage at the first metal rail and a second supply voltage at a second metal rail; and

regulating, by the transistor, the first supply voltage according to the adjusted transconductance.

18. The method of claim 17 , wherein one or more functional circuits are coupled to the first metal rail and operate based on the first supply voltage.

19. The method of claim 17 , further comprising:

receiving, at a drain electrode of the transistor coupled to the second metal rail, the second supply voltage; and

providing, at a source electrode of the transistor coupled to the first metal rail, the first supply voltage.

20. The method of claim 17 , wherein detecting, by the transistor, the change in the first supply voltage supplied along the first metal rail includes:

detecting, by the transistor, a difference between i) the second supply voltage at a gate electrode of the transistor and ii) the first supply voltage at a source electrode of the transistor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 29, 2021
From: MORI, HARUKI; FUJIWARA, HIDEHIRO; CHEN, YEN-HUEI; HSU, YU-HAO; CHANG, ZHI-HAO; LIN, YANGSYU; LIAO, HUNG-JEN; CHENG, CHITING
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
Reel/Frame 058230/0409 →
Continuity (2)
Continuation 16775570 · Jan 29, 2020
Related Publication 20220083089A1 · Mar 17, 2022
Cited By (1)
US 12,346,143