Through-wafer coaxial transition
An electronic assembly, comprising a carrier wafer of a first material, having a top wafer surface and a bottom wafer surface; said carrier wafer comprising a through-wafer cavity having walls that join said top wafer surface to said bottom wafer surface; and an insulator of a second material, different from the first material, having insulator top and bottom surfaces, joined by insulator side surfaces, and having a conducting via that passes through said insulator between said insulator top surface and said insulator bottom surface; wherein the insulator is held in said through-wafer cavity by direct contact of the insulator side surfaces with an attachment metal that fills said through-wafer cavity.
1. An electronic assembly, comprising: a carrier wafer of a first material, having a top wafer surface and a bottom wafer surface; said carrier wafer comprising a through-wafer cavity having walls that join said top wafer surface to said bottom wafer surface; and an insulator of a second material, different from the first material, having insulator top and bottom surfaces, joined by insulator side surfaces, and having a conducting via that passes through said insulator between said insulator top surface and said insulator bottom surface; wherein the insulator is held in said through-wafer cavity by direct contact of the insulator side surfaces with an attachment metal that fills said through-wafer cavity; the electronic assembly further comprising a component chip having a top surface and a bottom surface joined by chip side surfaces, said component chip being held in said through-wafer cavity by direct contact of said chip side surface with said attachment metal.
2. The electronic assembly of claim 1 , wherein the carrier wafer and the insulator have a same thickness.
3. The electronic assembly of claim 1 , wherein the top surfaces of said carrier wafer, insulator and component chip are flush; and wherein a conductor formed above said top surfaces electrically connects a top portion of said conducting via to a contact pad on the top surface of said component chip.
4. The electronic assembly of claim 1 , wherein the top surfaces of said carrier wafer, insulator and component chip are flush and where the carrier wafer is thicker than the component chip; wherein said attachment metal fills the through-wafer cavity below the bottom surface of the component chip.
5. The electronic assembly of claim 1 , comprising: a first component chip having a first contact pad on a first component chip bottom surface; said first contact pad being electrically connected to a top portion of said conducting via; and a second component chip having a second contact pad on a second component chip top surface; said second contact pad being electrically connected to a bottom portion of said conducting via.
6. The electronic assembly of claim 5 , wherein said first contact pad is press bonded to said top portion of said conducting via; and said second contact pad is press bonded to said bottom portion of said conducting via.
7. The electronic assembly of claim 5 , wherein said first contact pad is ball bonded to said top portion of said conducting via; and said second contact pad is ball bonded to said bottom portion of said conducting via.
8. An electronic assembly, comprising: a carrier wafer of a first material, having a top wafer surface and a bottom wafer surface; said carrier wafer comprising a through-wafer cavity having walls that join said top wafer surface to said bottom wafer surface; and an insulator of a second material, different from the first material, having insulator top and bottom surfaces, joined by insulator side surfaces, and having a conducting via that passes through said insulator between said insulator top surface and said insulator bottom surface; wherein the insulator is held in said through-wafer cavity by direct contact of the insulator side surfaces with an attachment metal that fills said through-wafer cavity, wherein the insulator is thicker than the carrier wafer, the top surface of the insulator and the carrier wafer being flush and the bottom surface of the insulator protruding out of the bottom surface of the carrier wafer, and wherein said attachment metal further covers at least a portion of the bottom surface of the carrier wafer around the through-wafer cavity.
9. An electronic assembly, comprising: a carrier wafer of a first material, having a top wafer surface and a bottom wafer surface; said carrier wafer comprising a through-wafer cavity having walls that join said top wafer surface to said bottom wafer surface; and an insulator of a second material, different from the first material, having insulator top and bottom surfaces, joined by insulator side surfaces, and having a conducting via that passes through said insulator between said insulator top surface and said insulator bottom surface; wherein the insulator is held in said through-wafer cavity by direct contact of the insulator side surfaces with an attachment metal that fills said through-wafer cavity, the electronic assembly further comprising a component chip having a top surface and a bottom surface joined by chip side surfaces, said component chip being held in a second through-wafer cavity by direct contact of said chip side surface with a second attachment metal filling said second through-wafer cavity.