IP Library Granted Patent US 11,614,809
Granted Patent B2
US 11,614,809 · App. 17/543,833 · Granted Mar 28, 2023

Sub-threshold addressing and erasing in a magneto-electrophoretic writing medium

Inventors: Crystal Nguyen (Bedford, MA); Evan Griffith (Marlborough, MA); Seth J. Bishop (Framingham, MA); Stephen J. Telfer (Arlington, MA); Kosta Ladavac (Somerville, MA); Andrew A. Drabek (Belmont, MA); Sunil Krishna Sainis (Melrose, MA); Richard J. Paolini, Jr. (Framingham, MA); Samantha Morrill (Nashua, NH)
Assignee: E Ink Corporation
G06F3/03545G02F1/167G02F1/1673G02F1/1685G06F3/0383
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Quick Facts
Patent No.
US 11,614,809
App. No.
17/543,833
Granted
Mar 28, 2023
Kind
B2
Abstract

A magneto-electrophoretic medium that can be globally and locally addressed and erased. The medium provides a writeable display with no perceivable lag and the ability to write and erase with only minimal power requirements. In particular, the magneto-electrophoretic medium can be erased by providing a subthreshold electric stimulus and supplementing a second non-electric stimulus that disturbs the written state and allows the magneto-electrophoretic particles to return to their original state.

Claims (38)

1. A method for erasing a magneto-electrophoretic medium including magneto-electrophoretic particles, the method comprising a local erase step and a global erase step,

the local erase step comprising applying a magnetic field stimulus to the magneto-electrophoretic medium and simultaneously applying a sub-threshold voltage to the magneto-electrophoretic medium, thereby causing the magneto-electrophoretic medium to switch from a first state to a second state,

the sub-threshold voltage being greater than zero but insufficient alone to cause the magneto-electrophoretic medium to switch from the first state to the second state within five seconds,

the sub-threshold voltage being less than one half of a threshold voltage required to cause the magneto-electrophoretic medium to switch from the first state to the second state over a same period, and

the global erase step comprising applying a first voltage that is sufficient alone to cause the magneto-electrophoretic medium to switch from the first state to the second state over the same period.

2. The method of claim 1 , wherein the magnetic field stimulus is provided by a stylus.

3. The method of claim 2 , wherein the stylus is constructed from a permanent magnet.

4. The method of claim 2 , wherein the stylus comprises a magnet providing a field strength between 10 and 1000 Gauss at a surface of the stylus.

5. The method of claim 2 , wherein the stylus has a body with a first end and a second end, comprising:

a first magnet proximal to the first end and providing a first magnetic field between 500 Gauss and 5000 Gauss at the first end;

a second magnet proximal to the second end and providing a second magnetic field between 10 Gauss and 500 Gauss at the second end;

a wireless transmitter within the body; and

a switch on the body of the stylus operatively connected to the wireless transmitter.

6. The method of claim 1 , wherein the magnetic field stimulus is provided by a striped-pole magnetic material.

7. The method of claim 1 , wherein the magneto-electrophoretic medium comprises electrically-charged ferromagnetic particles.

8. The method of claim 1 , wherein the global erase step comprises a first time-varying waveform.

9. The method of claim 8 , further comprising:

measuring a remnant voltage on the magneto-electrophoretic medium; and

if an absolute value of the remnant voltage is higher than 0.3 V, modifying the first time-varying waveform to diminish the remnant voltage on the magneto-electrophoretic medium.

10. The method of claim 9 , wherein the first time-varying waveform is modified by changing an offset of the first time-varying waveform, or changing a duty cycle of the first time-varying waveform, or changing an amplitude of the first time-varying waveform.

11. The method of claim 1 , wherein the sub-threshold voltage comprises a second time-varying waveform.

12. The method of claim 11 , further comprising:

measuring a remnant voltage on the magneto-electrophoretic medium; and

if an absolute value of the remnant voltage is higher than 0.3 V, modifying the second time-varying waveform to diminish the remnant voltage on the magneto-electrophoretic medium.

13. The method of claim 12 , wherein the second time-varying waveform is modified by changing an offset of the second time-varying waveform, or changing a duty cycle of the second time-varying waveform, or changing an amplitude of the second time-varying waveform.

14. A method for erasing a magneto-electrophoretic medium including magneto-electrophoretic particles, the method comprising a local erase step and a global erase step,

the local erase step comprising applying a magnetic field stimulus to the magneto-electrophoretic medium and simultaneously applying a sub-threshold voltage to the magneto-electrophoretic medium, thereby causing the magneto-electrophoretic medium to switch from a first state to a second state,

the sub-threshold voltage being greater than zero but insufficient alone to cause the magneto-electrophoretic medium to switch from the first state to the second state within five seconds, and

the global erase step comprising

applying a first time-varying waveform, the first time-varying waveform comprising a first voltage that is sufficient alone to cause the magneto-electrophoretic medium to switch from the first state to the second state over a same period,

measuring a remnant voltage on the magneto-electrophoretic medium; and, if an absolute value of the remnant voltage is higher than 0.3 V, modifying the first time-varying waveform to diminish the remnant voltage on the magneto-electrophoretic medium.

15. The method of claim 14 , wherein the first time-varying waveform is modified by changing an offset of the first time-varying waveform, or changing a duty cycle of the first time-varying waveform, or changing an amplitude of the first time-varying waveform.

16. A method for erasing a magneto-electrophoretic medium including magneto-electrophoretic particles, the method comprising a local erase step and a global erase step,

the local erase step comprising

applying a magnetic field stimulus to the magneto-electrophoretic medium and simultaneously applying a second time-varying waveform to the magneto-electrophoretic medium, the second time-varying waveform comprising a sub-threshold voltage being greater than zero but insufficient alone to cause the magneto-electrophoretic medium to switch from the first state to the second state within five seconds, thereby causing the magneto-electrophoretic medium to switch from a first state to a second state,

measuring a remnant voltage on the magneto-electrophoretic medium; and, if an absolute value of the remnant voltage is higher than 0.3 V, modifying the second time-varying waveform to diminish the remnant voltage on the magneto-electrophoretic medium,

the global erase step comprising applying a first voltage that is sufficient alone to cause the magneto-electrophoretic medium to switch from the first state to the second state over the same period.

17. The method of claim 16 , wherein the second time-varying waveform is modified by changing an offset of the second time-varying waveform, or changing a duty cycle of the second time-varying waveform, or changing an amplitude of the second time-varying waveform.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 20, 2021
From: NGUYEN, CRYSTAL; GRIFFITH, EVAN; BISHOP, SETH J.; TELFER, STEPHEN J.; LADAVAC, KOSTA; DRABEK, ANDREW A.; SAINIS, SUNIL KRISHNA; PAOLINI, RICHARD J., JR.; MORRILL, SAMANTHA
To: E INK CORPORATION
Reel/Frame 058434/0585 →
Continuity (4)
Continuation 16720452 · Dec 19, 2019
Provisional Application 62789239 · Jan 7, 2019
Provisional Application 62784301 · Dec 21, 2018
Related Publication 20220100292A1 · Mar 31, 2022