Dummy pattern structure for reducing dishing
View Patent ↗A device includes a substrate, at least one first dielectric layer on the substrate and including a first dielectric constant, at least one second dielectric layer on the at least one first dielectric layer and including a second dielectric constant greater than the first dielectric constant, and a dummy pattern including a first conductive pattern having a first pattern density in the at least one first dielectric layer and a second conductive pattern in the at least one second dielectric layer and comprising a second pattern density. The first pattern density is equal to or greater than the second pattern density.
1. A device comprising:
a substrate;
at least one device formed on the substrate;
an interlayer dielectric layer on the substrate;
an intermetal dielectric layer on the interlayer dielectric layer and above the at least one device, the intermetal dielectric layer comprising:
at least one first dielectric layer on the substrate and comprising a first dielectric constant value:
at least one second dielectric layer on the at least one first dielectric layer and comprising a second dielectric constant value greater than the first dielectric constant value; and
a dummy pattern comprising a first conductive pattern having a first dummy pattern density in the at least one first dielectric layer and a second conductive pattern in the at least one second dielectric layer and comprising a second dummy pattern density, wherein the first dummy pattern density is greater than the second dummy pattern density.
2. The device of claim 1 , further comprising a plurality of active structures, wherein the dummy pattern is disposed between two or more active structures.
3. The device of claim 1 , wherein the first dielectric constant value is smaller than a dielectric constant of silicon oxide, and the second dielectric constant value is greater than the first dielectric constant value.
4. The device of claim 1 , wherein the at least one first dielectric layer comprises a plurality of low-k dielectric layers, the first conductive pattern comprises a plurality of dummy metal lines disposed in the plurality of low-k dielectric layers and electrically connected to each other through a plurality of dummy vias, the plurality of dummy metal lines and dummy vias having no function with respect to electrical circuit functions.
5. The device of claim 1 , wherein the at least one first dielectric layer comprises a plurality of extremely low-k dielectric layers, the first conductive pattern comprises a plurality of dummy metal lines disposed in the plurality of extremely low-k dielectric layers and electrically connected to each other through a plurality of dummy vias, the plurality of dummy metal lines and dummy vias having no function with respect to electrical circuit functions.
6. The device of claim 5 , wherein the at least one second dielectric layer comprises a plurality of low-k dielectric layers.
7. The device of claim 1 , wherein the first conductive pattern and the second conductive pattern are not physically connected.
8. The device of claim 1 , wherein the first dummy pattern density is greater than the second dummy pattern density such that dishing is reduced during a planarization process.
9. The device of claim 1 , wherein the first dummy pattern density is greater than the second dummy pattern density such that erosion is be reduced during a planarization process.
10. A semiconductor package comprising:
a substrate;
at least one device formed on the substrate;
an interlayer dielectric (ILD) layer disposed on the substrate;
an intermetal dielectric layer on the ILD layer and above the at least one device, the intermetal dielectric layer comprising:
a plurality of first dielectric layers disposed on the ILD layer, the plurality of the first dielectric layers having a first dielectric constant value:
a plurality of second dielectric layers disposed on the plurality of the first dielectric layers, the plurality of second dielectric layers having a second dielectric constant value greater than the first dielectric constant value; and
a dummy pattern comprising a first dummy conductive pattern having a first dummy pattern density disposed in the plurality of the first dielectric layers and a second dummy conductive pattern having a second dummy pattern density disposed in the plurality of the second dielectric layers; and
wherein the first dummy pattern density is greater than the second dummy pattern density.
11. The semiconductor package of claim 10 , further comprising a plurality of active structures, wherein the dummy pattern is disposed between two or more active structures.
12. The semiconductor package of claim 10 , wherein the first dielectric constant value is smaller than a dielectric constant of silicon oxide, and the second dielectric constant value is greater than the first dielectric constant value.
13. The semiconductor package of claim 10 , wherein the plurality of the first dielectric layers comprises a plurality of low-k dielectric layers, the first dummy conductive pattern comprises a plurality of dummy metal lines disposed in the plurality of low-k dielectric layers and electrically connected to each other through a plurality of dummy vias, the plurality of dummy metal lines and the plurality of dummy vias having no function with respect to electrical circuit functions.
14. The semiconductor package of claim 10 , wherein the plurality of the first dielectric layers comprises a plurality of extremely low-k dielectric layers, the first dummy conductive pattern comprises a plurality of dummy metal lines disposed in the plurality of extremely low-k dielectric layers and electrically connected to each other through a plurality of dummy vias, the plurality of dummy metal lines and the plurality of dummy vias having no function with respect to electrical circuit functions.
15. The semiconductor package of claim 14 , wherein the plurality of the second dielectric layers comprises a plurality of low-k dielectric layers.
16. The semiconductor package of claim 10 , wherein the first dummy conductive pattern and the second dummy conductive pattern are not physically connected.
17. The semiconductor package of claim 10 , wherein the first dummy pattern density is greater than the second dummy pattern density such that dishing is reduced during a planarization process.
18. The semiconductor package of claim 10 , wherein the first dummy pattern density is greater than the second dummy pattern density such that erosion is be reduced during a planarization process.
19. A semiconductor package comprising:
a substrate;
at least one device formed on the substrate;
an interlayer dielectric layer on the substrate;
an intermetal dielectric layer on the interlayer dielectric layer and above the at least one device, the intermetal dielectric layer comprising:
a plurality of first dielectric layers disposed on the substrate, the plurality of the first dielectric layers having a first dielectric constant value:
a plurality of second dielectric layers disposed on the plurality of the first dielectric layers, the plurality of second dielectric layers having a second dielectric constant value greater than the first dielectric constant value; and
a dummy pattern comprising a first dummy conductive pattern having a first dummy pattern density disposed in the plurality of the first dielectric layers and a second dummy conductive pattern having a second dummy pattern density disposed in the plurality of the second dielectric layers; and
wherein the first dummy pattern density is greater than the second dummy pattern density.
20. The semiconductor package of claim 19 , wherein the dummy pattern in disposed between a first active structure and a second active structure.