Selective deposition of metals, metal oxides, and dielectrics
Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.
1. A method for selectively depositing a metal material on a first metal surface of a substrate relative to a second, non-metal surface of the same substrate, the method comprising:
at least one deposition cycle comprising alternately contacting the substrate with a precursor comprising a metal and a reactant, and
wherein the second, non-metal surface is treated to inhibit deposition of the metal material thereon prior to the at least one deposition cycle,
wherein treating the second, non-metal surface comprises treating the second, non-metal surface with a passivation chemical to form a passivated surface, and
wherein the metal material is selectively deposited on the first metal surface relative to the second, non-metal surface with a selectivity of at least 50%.
2. The method of claim 1 , wherein the metal material is selectively deposited on the first metal surface relative to the second, non-metal surface with a selectivity of at least 90%.
3. The method of claim 1 , wherein the deposition cycle is part of an atomic layer deposition process.
4. The method of claim 1 , wherein the second, non-metal surface is a dielectric surface.
5. The method of claim 1 , wherein the second, non-metal surface is a hydrophobic surface.
6. The method of claim 1 , wherein the second, non-metal surface, is a hydrophilic, OH-terminated surface or contains some amount of OH-groups.
7. The method of claim 6 , wherein the second, non-metal surface is an OH, NH x or SH x terminated surface.
8. The method of claim 1 , wherein the second, non-metal surface comprises SiO 2 , GeO 2 or a low-k material.
9. The method of claim 1 , wherein the first metal surface comprises a noble metal.
10. The method of claim 1 , wherein the first metal surface comprises Cu, Ru, Al, Ni, or Co.
11. The method of claim 1 , wherein the first metal surface is a Cu surface.
12. The method of claim 1 , wherein the second, non-metal surface is treated to provide a SiH 3 terminated surface.
13. The method of claim 1 , wherein the second, non-metal surface is silylated or halogenated.
14. The method of claim 13 , wherein the second, non-metal surface is passivated with alkyl-silyl groups.
15. The method of claim 13 , wherein the second, non-metal surface is halogenated to form a chlorinated or fluorinated surface.
16. The method of claim 1 , wherein the precursor comprising a metal comprises Ni, Fe or Co.
17. The method of claim 1 , wherein the metal material deposited on the first metal surface is selected from Sb, Ge, Ni, Fe, and Co.
18. The method of claim 17 , wherein the metal material is subsequently oxidized to form a metal oxide.
19. The method of claim 1 , wherein the reactant comprises hydrogen, forming gas or an alcohol.