Josephson Junction using molecular beam epitaxy
According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.
1. A Josephson Junction comprising:
a template layer configured to orient subsequent adjacent layers in an a-axis orientation;
a first conductive layer adjacent the template layer and oriented in the a-axis orientation, wherein the first conductive layer is a superconducting perovskite;
a barrier layer adjacent the first conductive layer; and
a second conductive layer adjacent the barrier layer and oriented in the a-axis orientation, wherein the second conductive layer is a superconducting perovskite;
wherein the template layer, the first conductive layer, the second conductive layer and the barrier layer are all formed via molecular beam epitaxy.
2. The Josephson Junction of claim 1 , further comprising:
a buffer layer adjacent to and configured to support the template layer.
3. The Josephson Junction of claim 2 , further comprising:
a substrate layer adjacent to and configured to support the buffer layer.
4. The Josephson Junction of claim 1 , wherein the template layer comprises LSGO.
5. The Josephson Junction of claim 1 , wherein the template layer comprises YBCO in the a-axis orientation.
6. The Josephson Junction of claim 1 , wherein one of the conductive layers comprises YBCO.
7. The Josephson Junction of claim 6 , wherein both of the conductive layers comprise YBCO.
8. The Josephson Junction of claim 6 , wherein the other one of the conductive layers comprises a perovskite other than YBCO.
9. The Josephson Junction of claim 1 , wherein the barrier layer comprises PBCO.
10. The Josephson Junction of claim 1 , wherein the barrier layer comprises a perovskite.
11. The Josephson Junction of claim 2 , wherein the buffer layer comprises AlN, MgO, or GaN.
12. The Josephson Junction of claim 3 , wherein the substrate layer comprises SiC.
13. The Josephson Junction of claim 2 , wherein the buffer layer comprises YBCO in the a-axis orientation or MgO.
14. The Josephson Junction of claim 13 , wherein the template layer comprises YBCO in the a-axis orientation.
15. A Josephson Junction comprising:
a template layer of LSGO configured to orient subsequent adjacent layers in an a-axis orientation;
a first conductive layer adjacent the template layer and oriented in the a-axis orientation, wherein the first conductive layer comprises a first superconducting perovskite;
a barrier layer adjacent the first conductive layer and oriented in the a-axis orientation; and
a second conductive layer adjacent the barrier layer and oriented in the a-axis orientation, wherein the second conductive layer comprises a second superconducting perovskite;
wherein the template layer, the first conductive layer, the second conductive layer and the barrier layer are all formed via molecular beam epitaxy.
16. The Josephson Junction of claim 15 , wherein the first superconducting perovskite and the second superconducting perovskite are the same superconducting perovskite.
17. The Josephson Junction of claim 15 , wherein the first superconducting perovskite and the second superconducting perovskite are different superconducting perovskites.