Semiconductor device with epitaxial liftoff layers for directly converting radioisotope emissions into electrical power
A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A radioisotope source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material. The devices can be connected in series or parallel.
1. A device for producing electricity, comprising:
a stack of material layers, further comprising:
a back side metal layer;
epitaxial liftoff (ELO) layers comprising n doped layers and p doped layers, the epitaxial layers having a first surface overlying the back side metal layer and having a second surface oppositely directed relative to the first surface;
a radioisotope source disposed proximate or in contact with the second surface of the epitaxial liftoff layers, the radioisotope source generating particles or gamma rays that impinge the epitaxial liftoff layers;
a first conductive region in conductive contact with one of the n or p-doped layers;
a second conductive region in conductive contact with another of the n and p-doped layers; and
wherein electricity is produced between the first and second conductive regions by action of the particles or the gamma rays.
2. The device for producing electricity of claim 1 , the electricity for supplying to a load or for storing in a storage device.
3. The device for producing electricity of claim 1 , wherein the first conductive region comprises at least two conductive pads on the second surface of the epitaxial liftoff layers, and wherein the radioisotope source is disposed proximate the second surface of the epitaxial liftoff layers and in contact with the at least two conductive pads.
4. The device for producing electricity of claim 1 , wherein a first surface of the radioisotope source disposed proximate or in contact with the second surface of the epitaxial liftoff layers, a second surface of the radioisotope source opposite the first surface thereof, the device for producing electricity further comprising an independent conductive substrate disposed on the second surface of the radioisotope source.
5. The device for producing electricity of claim 4 , the back side metal layer serving as the first conductive region and the independent conductive substrate serving as the second conductive region.
6. The device for producing electricity of claim 1 , the epitaxial liftoff layers further comprising one or more of a p-doped and an n-doped layer forming a junction, a back surface field reflector layer, a window layer, a cap layer, and a crystal lattice matching layer.
7. The device for producing electricity of claim 1 , wherein particles or gamma rays emitted by the radio isotope source create electron-hole pairs in the epitaxial liftoff layers, the radioisotope source comprising a beta source, further comprising tritium, nickel-63, promethium-147, tritium metal hydride, or a polymer containing tritium.
8. The device for producing electricity of claim 1 , wherein a material of the n-doped layers and the p-doped layers comprises GaAs, InAlP, InGaP, InAlGaP, or AlGaAs.
9. The device for producing electricity of claim 1 , wherein the first conductive region comprises a conductive ring on the second surface of the epitaxial liftoff layers, wherein the radioisotope source is disposed proximate the second surface of the epitaxial liftoff layers and in contact with the conductive ring.
10. The device for producing electricity of claim 1 , the back side metal layer operating as the first or the second conductive region.
11. The device for producing electricity of claim 1 , wherein the first conductive region extends from an exposed surface of the epitaxial liftoff layers, and wherein the radioisotope source is in contact with the second surface of the epitaxial liftoff layers, and wherein the second conductive contact comprises a region of the back side metal layer or a conductive region of the radioisotope source.
12. A device for producing electricity, comprising:
a stack of material layers, further comprising:
a back side metal layer;
epitaxial liftoff (ELO) layers comprising n doped layers and p doped layers, the epitaxial layers having a first surface overlying the back side metal layer and having a second surface oppositely directed relative to the first surface;
a radioisotope source having first and second oppositely disposed surfaces, the first surface thereof proximate or in conductive communication with the second surface of the epitaxial liftoff layers, the radioisotope source generating particles or gamma rays that impinge the epitaxial liftoff layers;
a conductive substrate in conductive communication with the second surface of the of the radioisotope source;
a first conductive region in conductive communication with one of the conductive substrate or with the radioisotope source;
a second conductive region in conductive contact with the back side metal layer; and
wherein electricity is produced between the first and second conductive regions by action of the particles or the gamma rays.
13. The device for producing electricity of claim 12 , further comprising a third conductive region in conductive communication with the conductive substrate or with the radioisotope source or with the second surface of the epitaxial layers, and wherein electricity is produced between the second and third conductive regions by action of the particles or the gamma rays.
14. The device for producing electricity of claim 1 wherein the first or the second conductive regions comprises contact pads, contact grids/lines, conductive pillars, conductive posts, conductive blocks, conductive vertical structures, conductive columns, conductive surfaces, or another conductive structure for collecting charge carriers produced by action of the particles or the gamma rays and carrying current.