IP Library › Granted Patent US 12,119,319
Granted Patent B2
US 12,119,319 · App. 17/549,810 · Granted Oct 15, 2024

Electronic devices and methods of manufacturing electronic devices

Inventors: Ki Yeul Yang (Seoul, KR); Eun Taek Jeong (Incheon, KR); Du Young Lee (Gyenoggi-do, KR)
Assignee: Amkor Technology Singapore Holding Pte. Ltd.
H01L24/16H01L23/3157H01L23/49811H01L23/49822H01L23/49894H01L24/32H01L24/73H01L2224/16227H01L2224/32225H01L2224/73204
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,119,319
App. No.
17/549,810
Granted
Oct 15, 2024
Kind
B2
Abstract

In one example, an electronic device includes a substrate, which has a dielectric structure includes a dielectric structure top side and a dielectric structure bottom side opposite to the dielectric structure top side, and a conductive structure comprising a protruded via that extends from the dielectric structure bottom side. An electronic component is coupled to the conductive structure at the dielectric structure top side, and a terminal is coupled to the protruded via such that the protruded via extends into the terminal. Other examples and related methods are also disclosed herein.

Claims (134)

1. An electronic device, comprising:

a substrate comprising:

a dielectric structure comprising a dielectric structure top side and a dielectric structure bottom side opposite to the dielectric structure top side; and

a conductive structure comprising a protruded via that extends outward from the dielectric structure bottom side;

an electronic component coupled to the conductive structure at the dielectric structure top side; and

a terminal coupled to the protruded via such that the protruded via extends into the terminal;

wherein:

the dielectric structure comprises a via dielectric comprising a via dielectric bottom side that defines the dielectric structure bottom side and a via dielectric top side opposite to the via dielectric bottom side;

the via dielectric comprises an aperture that extends from the via dielectric top side to the via dielectric bottom side;

the protruded via is within the aperture;

a portion of the protruded via extends out of the aperture at the via dielectric top side and overlaps onto via dielectric top side;

the conductive structure comprises a seed along sidewalls of the aperture;

the protruded via comprises a via tip that extends from the dielectric structure bottom side;

the seed is interposed between the sidewalls of the aperture and the protruded via;

the seed comprises a barrier layer and a first plating seed interposed between the barrier layer and the protruded via; and

the first plating seed extends outside of the aperture and covers the via tip.

2. The electronic device of claim 1 , further comprising:

a second plating seed interposed between the first plating seed and the terminal, wherein:

the second plating seed extends along a portion of the dielectric structure bottom side.

3. The electronic device of claim 1 , wherein:

the barrier layer comprises a dielectric; and

the via tip is devoid of the barrier layer.

4. The electronic device of claim 1 , wherein:

the barrier layer comprises a conductor; and

the barrier layer covers the via tip.

5. The electronic device of claim 1 , wherein:

the protruded via comprises a via tip comprising a rounded shape.

6. The electronic device of claim 5 , wherein:

the terminal comprises a pillar and a solder tip; and

the via tip extends into the pillar.

7. The electronic device of claim 1 , wherein:

the dielectric structure comprises a first dielectric comprising a first dielectric top side and a first dielectric bottom side;

the first dielectric bottom side contacts the via dielectric top side; and

the first dielectric bottom side contacts the portion of the protruded via that overlaps onto the via dielectric top side.

8. The electronic device of claim 1 , wherein:

the substrate comprises a redistribution layer (RDL) substrate;

the dielectric structure comprises a plurality of dielectric layers; and

the conductive structure comprises traces embedded between the plurality of dielectric layers.

9. The electronic device of claim 1 , further comprising:

a body over the dielectric structure top side and covering at least portions of the electronic component.

10. An electronic device, comprising:

a substrate comprising:

a dielectric structure comprising a dielectric structure top side and a dielectric structure bottom side opposite to the dielectric structure top side, wherein:

the dielectric structure comprises:

a via dielectric comprising a via dielectric bottom side that defines the dielectric structure bottom side and via dielectric top side opposite to the via dielectric bottom side; and

a first dielectric comprising a first dielectric top side and a first dielectric bottom side that contacts the via dielectric top side; and

the via dielectric comprise an aperture that extends from the via dielectric top side to the via dielectric bottom side;

and

a conductive structure comprising:

a protruded via within the aperture and comprising a via tip that extends outward from the dielectric structure bottom side such that the dielectric structure bottom side and the via tip reside on different planes and a portion of the protruded via extends outside of the aperture to overlap the via dielectric top side;

a seed over the via tip and over surfaces of the aperture between the via dielectric and the protruded via; and

a substrate internal terminal at the dielectric structure top side and coupled to the protruded via;

wherein:

the first dielectric bottom side contacts the portion of the protruded via overlapping the via dielectric top side;

an electronic component coupled to the substrate internal terminal at the dielectric structure top side;

a body encapsulating the electronic component; and

a terminal coupled to the protruded via;

wherein:

the via tip extends into the terminal.

11. The electronic device of claim 10 , wherein:

the seed comprises a barrier and a seed layer;

the seed layer is interposed between the barrier and the protruded via; and

the seed layer covers the via tip.

12. The electronic device of claim 10 , wherein:

a surface of the electronic component is exposed from the body.

13. The electronic device of claim 10 , wherein:

the protruded via comprises a plated material;

the via tip comprises a side surface exposed from the via dielectric; and

the terminal comprises:

a terminal seed covering the via tip including the side surface of the via tip; and

a bump over the terminal seed.

14. The electronic device of claim 10 , wherein:

the electronic component comprises a component terminal;

the component terminal is attached to the substrate internal terminal; and

the electronic device comprises an underfill between the component terminal and the substrate internal terminal.

15. A method for making an electronic device, comprising:

providing a substrate comprising:

a dielectric structure comprising a dielectric structure top side and a dielectric structure bottom side opposite to the dielectric structure top side, wherein:

the dielectric structure comprises a via dielectric that defines the dielectric structure bottom side; and

the via dielectric comprises an aperture;

and

a conductive structure comprising:

a protruded via within the aperture and comprising a via tip that extends outward from the dielectric structure bottom side so that the dielectric structure bottom side and the via tip reside on different planes;

a seed over surfaces of the aperture between the via dielectric and the protruded via; and

a conductor at the dielectric structure top side and coupled to the protruded via;

coupling an electronic component to the conductor at the dielectric structure top side;

providing a body encapsulating the electronic component; and

providing a terminal coupled to the protruded via;

wherein:

the via tip extends into the terminal; and

providing the substrate comprises:

providing the via dielectric comprising a height;

providing the aperture in the via dielectric, wherein the aperture has a depth less than the height to define a lower dielectric under the aperture;

providing the seed over the surfaces of the aperture;

providing the protruded via over the seed and within the aperture; and

removing a portion of the via dielectric including the lower dielectric to expose the via tip and define the dielectric structure bottom side.

16. The method of claim 15 , wherein:

providing the substrate comprises:

providing a carrier comprising an upper side;

providing the via dielectric over the upper side of the carrier; and

removing the carrier before removing the portion of the via dielectric.

17. The method of claim 15 , wherein:

providing the substrate comprises providing the seed comprising a barrier and a seed layer over the barrier; and

the barrier and the seed layer cover the via tip.

18. The method of claim 15 , wherein:

providing the substrate comprises providing the seed comprising a barrier and a seed layer over the barrier; and

the seed layer is over the via tip but at least a portion of the via tip is exposed from the barrier.

19. An electronic device, comprising:

a substrate comprising:

a dielectric structure comprising a dielectric structure top side and a dielectric structure bottom side opposite to the dielectric structure top side; and

a conductive structure comprising a protruded via that extends outward from the dielectric structure bottom side;

an electronic component coupled to the conductive structure at the dielectric structure top side; and

a terminal coupled to the protruded via such that the protruded via extends into the terminal;

wherein:

the dielectric structure comprises a via dielectric comprising a via dielectric bottom side that defines the dielectric structure bottom side and a via dielectric top side opposite to the via dielectric bottom side;

the via dielectric comprises an aperture that extends from the via dielectric top side to the via dielectric bottom side;

the protruded via is within the aperture;

a portion of the protruded via extends out of the aperture at the via dielectric top side and overlaps onto via dielectric top side;

the protruded via comprises a via tip comprising a rounded shape;

the terminal comprises a pillar and a solder tip; and

the via tip extends into the pillar.

20. The electronic device of claim 19 , wherein:

the conductive structure comprises a seed along sidewalls of the aperture;

the protruded via comprises a via tip that extends from the dielectric structure bottom side; and

the seed is interposed between the sidewalls of the aperture and the protruded via.

21. The electronic device of claim 20 , wherein:

the seed comprises a barrier and a first plating seed interposed between the barrier and the protruded via; and

the first plating seed extends outside of the aperture and covers the via tip.

22. The electronic device of claim 21 , further comprising:

a second plating seed interposed between the first plating seed and the terminal, wherein:

the second plating seed extends along a portion of the dielectric structure bottom side.

23. The electronic device of claim 21 , wherein:

the barrier layer comprises a dielectric; and

the via tip is devoid of the barrier.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 13, 2021
From: YANG, KI YEUL; JEONG, EUN TAEK; LEE, DU YOUNG
To: AMKOR TECHNOLOGY KOREA, INC.
Reel/Frame 058377/0688 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 13, 2021
From: AMKOR TECHNOLOGY KOREA, INC.
To: AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD.
Reel/Frame 058496/0151 →
Continuity (1)
Related Publication 20230187400A1 · Jun 15, 2023