IP Library › Granted Patent US 11,901,039

Granted Patent B2

US 11,901,039 · App. 17/556,570 · Granted Feb 13, 2024

Multiple differential write clock signals with different phases

Inventor: Keun Soo Song (Eagle, ID)

Assignee: Micron Technology, Inc.

G11C7/222 G11C7/1069 G11C7/1096 H03L7/0818

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Quick Facts

Patent No.: US 11,901,039
App. No.: 17/556,570
Granted: Feb 13, 2024
Kind: B2

External Links

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Abstract

Apparatuses and techniques for operating devices with multiple differential write clock signals having different phases are described. For example, a memory controller (e.g., of a host device) can provide two differential write clock signals to a memory device over an interconnect. The two differential write clock signals may have a phase offset of approximately ninety degrees. Instead of generating its own phase-delayed write clock signals using a component (e.g., a clock divider circuit) that can enter the metastable state, the memory device can use the multiple differential write clocks signals provided by the memory controller to process memory requests.

Claims (91)

1. An apparatus comprising:

at least one memory array; and

an interface coupled to the at least one memory array and configured to be coupled to a memory controller via an interconnect, the interface comprising:

at least one set of first pins configured to receive, from the memory controller, a first differential write clock signal that passes through the interconnect, the first differential write clock signal comprising a first signal having a first phase and a second signal having a second phase that differs from the first phase by approximately 180 degrees; and

at least one set of second pins configured to receive, from the memory controller, a second differential write clock signal that passes through the interconnect, the second differential write clock signal comprising a third signal having a third phase that differs from the first phase and a fourth signal having a fourth phase that differs from the third phase by approximately 180 degrees.

2. The apparatus of claim 1 , wherein the third phase differs from the first phase by approximately ninety degrees.

3. The apparatus of claim 2 , wherein a difference between the third phase and the first phase is between approximately 89 and 91 degrees.

4. The apparatus of claim 2 , wherein the third phase differs from the first phase by approximately ninety degrees to enable the apparatus to communicate with the memory controller.

5. The apparatus of claim 1 , further comprising:

logic circuitry coupled to the at least one memory array and the interface, the logic circuitry configured to:

communicate with the at least one memory array and the interface; and

process memory requests using the first differential write clock signal and the second differential write clock signal.

6. The apparatus of claim 1 , wherein frequencies of the first differential write clock signal and the second differential write clock signal are substantially similar.

7. The apparatus of claim 1 , wherein:

the at least one set of first pins is configured to receive, from the memory controller, the first signal of the first differential write clock signal and the second signal of the first differential write clock signal that pass through the interconnect; and

the at least one set of second pins is configured to receive, from the memory controller, the first signal of the second differential write clock signal and the second signal of the second differential write clock signal that pass through the interconnect.

8. The apparatus of claim 1 , further comprising logic circuitry coupled to the at least one memory array and the interface, the logic circuitry configured to:

process a read request using the first differential write clock signal and the second differential write clock signal, the read request associated with a training operation; and

transmit, through the interface, data associated with the read request over the interconnect to the memory controller.

9. The apparatus of claim 8 , wherein the logic circuitry is further configured to receive, from the memory controller, another second differential write clock signal through the interconnect, the other second differential write clock signal having an adjusted phase delay based on transmission of the data.

10. The apparatus of claim 1 , wherein:

the at least one set of first pins comprises a first set of first pins and a second set of first pins;

the at least one set of second pins comprises a first set of second pins and a second set of second pins;

the interface comprises third pins configured to be coupled to a command-and-address bus of the interconnect;

the third pins are positioned between the first set of first pins and the second set of first pins; and

the third pins are positioned between the first set of second pins and the second set of second pins.

11. The apparatus of claim 10 , wherein the interface comprises:

a first set of fourth pins configured to be coupled to a data bus of the interconnect, the first set of fourth pins positioned closer to the first set of first pins than the second set of first pins and positioned closer to the first set of second pins than the second set of second pins; and

a second set of fourth pins configured to be coupled to the data bus of the interconnect, the second set of fourth pins positioned closer to the second set of first pins than the first set of first pins and positioned closer to the second set of second pins than the first set of second pins.

12. The apparatus of claim 11 , further comprising logic circuitry coupled to the at least one memory array and the interface, the logic circuitry configured to:

process a memory request associated with data presented at the first set of fourth pins using the first differential write clock signal received at the first set of first pins and the second differential write clock signal received at the first set of second pins; and

process another memory request associated with other data presented at the second set of fourth pins using the first differential write clock signal received at the second set of first pins and the second differential write clock signal received at the second set of second pins.

13. The apparatus of claim 12 , wherein the logic circuitry is configured to perform a leveling operation with the memory controller to synchronize the first differential write clock signal received at the first set of first pins with the first differential write clock signal received at the second set of first pins.

14. The apparatus of claim 13 , wherein the logic circuitry is configured to:

compare a rising edge of the first differential write clock signal received at the first set of pins to a rising edge of the first differential write clock signal received at the second set of first pins; and

transmit, through the interface, a feedback signal to the memory controller, the feedback signal comprising an indication of a timing difference between the first differential write clock signal received at the first set of first pins and the first differential write clock signal received at the second set of first pins.

15. The apparatus of claim 11 , wherein:

the interface comprises at least one fifth pin configured to receive, from the memory controller, a clock signal that passes through the interconnect;

the at least one fifth pin is positioned between the first set of first pins and the second set of first pins; and

the at least one fifth pin is positioned between the first set of second pins and the second set of second pins.

16. The apparatus of claim 15 , wherein the clock signal has a frequency that differs from a frequency of the first differential write clock signal and from a frequency of the second differential write clock signal.

17. The apparatus of claim 15 , further comprising logic circuitry coupled to the at least one memory array and the interface, the logic circuitry configured to receive command-and-address signals at the third pins using the clock signal.

18. The apparatus of claim 10 , further comprising logic circuitry coupled to the at least one memory array and the interface, the logic circuitry configured to receive command-and-address signals at the third pins using the first differential clock signal received at the first set of first pins.

19. The apparatus of claim 1 , wherein the interface comprises:

third pins configured to be coupled to a command-and-address bus of the interconnect, the third pins positioned on a same side of the at least one set of first pins and the at least one set of second pins; and

at least one fifth pin configured to receive, from the memory controller, a clock signal that passes through the interconnect.

20. The apparatus of claim 19 , wherein:

the at least one set of first pins comprises a single set of first pins; and

the at least one set of second pins comprises a single set of second pins.

21. The apparatus of claim 19 , further comprising logic circuitry coupled to the at least one memory array and the interface, the logic circuitry configured to perform a leveling operation with the memory controller to synchronize the first differential write clock signal received at the first set of first pins with the clock signal received at the at least one fifth pin.

22. The apparatus of claim 1 , further comprising at least one memory device, the at least one memory device comprising the at least one memory array and the interface.

23. A method comprising:

receiving, from a memory controller, a first differential write clock signal comprising a first signal having a first phase and a second signal having a second phase that differs from the first phase by approximately 180 degrees;

receiving, from the memory controller, a second differential write clock signal comprising a third signal having a third phase that differs from the first phase and a fourth signal having a fourth phase that differs from the third phase by approximately 180 degrees; and

processing memory requests using the first differential write clock signal and the second differential write clock signal.

24. The method of claim 23 , wherein the third phase differs from the first phase by approximately ninety degrees.

25. The method of claim 24 , further comprising:

processing a read request using the first differential write clock signal and the second differential write clock signal, the read request associated with a training operation;

transmitting data associated with the read request to the memory controller; and

receiving, from the memory controller, another second differential write clock signal, the other second differential write clock signal having an adjusted phase delay based on transmission of the data.

26. The method of claim 23 , further comprising performing a leveling operation with the memory controller to synchronize the first differential write clock signal to a reference clock signal.

27. The method of claim 26 , wherein the clock signal comprises a command-and-address clock signal or another instance of the first differential write clock signal.

28. An apparatus comprising:

an interface configured to be coupled to a memory device via an interconnect; and

clock circuitry coupled to the interface and configured to:

generate a first differential write clock signal comprising a first signal having a first phase and a second signal having a second phase that differs from the first phase by approximately 180 degrees;

generate a second differential write clock signal comprising a third signal having a third phase that differs from the first phase by approximately ninety degrees and a fourth signal having a fourth phase that differs from the third phase by approximately 180 degrees; and

transmit, through the interface, the first differential write clock signal and the second differential write clock signal over the interconnect to the memory device.

29. The apparatus of claim 28 , wherein the third phase differs from the first phase by approximately ninety degrees.

30. The apparatus of claim 28 , wherein the clock circuitry is configured to:

receive, through the interface, data from the memory device, the data associated with a read request; and

adjust, based on the data, a phase delay associated with the second differential write clock signal to cause the third phase to differ from the first phase by approximately ninety degrees.

31. The apparatus of claim 28 , wherein the clock circuitry is configured to:

transmit, through the interface, a reference clock signal over the interconnect to the memory device;

receive, from the memory device, an indication of a timing difference between the first differential write clock signal and a reference clock signal; and

adjust a phase delay associated with the first differential write clock signal to synchronize the first differential write clock signal with the reference clock signal.

32. The apparatus of claim 28 , wherein:

the apparatus comprises a host device including a memory controller; and

the memory controller comprises the clock circuitry.

33. A method comprising:

generating a first differential write clock signal comprising a first signal having a first phase and a second signal having a second phase that differs from the first phase by approximately 180 degrees;

generating a second differential write clock signal comprising a third signal having a third phase that differs from the first phase and a fourth signal having a fourth phase that differs from the third phase by approximately 180 degrees; and

transmitting the first differential write clock signal and the second differential write clock signal over an interconnect to a memory device.

34. The method of claim 33 , wherein the third phase differs from the first phase by approximately ninety degrees.

35. The method of claim 33 , further comprising:

receiving data from the memory device, the data associated with a read request; and

adjusting, based on the data, a phase delay associated with the second differential write clock signal to cause the third phase to differ from the first phase by approximately ninety degrees.

36. The method of claim 33 , further comprising:

transmitting a reference clock signal over the interconnect to the memory device;

receiving, from the memory device, an indication of a timing difference between the first differential write clock signal and the reference clock signal; and

adjusting a phase delay associated with the first differential write clock signal to synchronize the first differential write clock signal with the reference clock signal.

Assignments (1)

ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 20, 2021

From: SONG, KEUN SOO

To: MICRON TECHNOLOGY, INC.

Reel/Frame 058435/0819 →

Continuity (1)

Related Publication 20230197129A1 · Jun 22, 2023