Recovery of memory from asynchronous power loss

1. A storage system comprising:

at least one non-volatile memory device comprising multiple memory cells organized in physical pages; and

a controller coupled to the at least one non-volatile memory device, wherein instructions are stored in the storage system, wherein the instructions, when executed by the controller, cause the controller to perform operations, comprising:

in response to a detected asynchronous power loss (APL) at the storage system, determine a number of ones stored in a first physical page of memory cells; and

determine whether to write dummy data to the first physical page using the determined number of ones in the first physical page.

2. The storage system of claim 1 ,

wherein each of the multiple memory cells comprises multiple pages, including a lower page (LP), an upper page (UP), and an extra page (XP),

wherein to determine the number of ones comprises to determine the number of ones stored in the XPs of the first physical page of memory cells, and

wherein to determine whether to write the dummy data to the first physical page comprises using the determined number of ones in the XPs of the first physical page.

3. The storage system of claim 2 ,

wherein, to determine whether to write the dummy data to the first physical page, the controller is configured to compare the determined number of ones stored in the XPs of the first physical page to a threshold, and

wherein the controller is configured to write the dummy data to the first physical page of memory cells if the determined number of ones stored in the XPs of the first physical page is less than the threshold.

4. The storage system of claim 3 ,

wherein the threshold is a function of a number of memory cells in the first physical page and a number of bits in the multiple memory cells.

5. The storage system of claim 4 ,

wherein the threshold is between 37.5% and 50% of the number of memory cells in the first physical page.

6. The storage system of claim 4 ,

wherein the threshold is between 50% and 62.5% of the number of memory cells in the first physical page.

7. The storage system of claim 1 ,

wherein, to determine whether to write the dummy data to the first physical page, the controller is configured to compare the determined number of ones to a threshold, and wherein the controller is configured to write the dummy data to the first physical page of memory cells if the determined number of ones is less the threshold.

8. The storage system of claim 7 ,

wherein the threshold is a function of a number of memory cells in the first physical page and a number of bits in the multiple memory cells.

9. The storage system of claim 1 ,

wherein, to determine whether to write the dummy data to the first physical page, the controller is configured to compare the determined number of ones to a threshold, and

wherein the controller is configured to refrain from writing the dummy data to the first physical page of memory cells if the determined number of ones does not exceed the threshold.

10. The storage system of claim 1 ,

wherein, in response to the detected APL, the controller is configured to detect one or more fake programmed pages, wherein the first physical page is a detected fake programmed page.

11. The storage system of claim 2 ,

wherein, to determine the number of ones stored in the XPs of the memory cells of the first physical page of memory cells, the controller is configured to read values stored in the XPs of the first physical page of memory cells.

12. A method implemented by controller of a storage system comprising at least one non-volatile memory device comprising multiple memory cells organized in physical pages, the method comprising:

detecting an asynchronous power loss (APL) at the storage system;

in response to the detected APL, determining a number of ones stored in a first physical page of memory cells of the storage system; and

determining whether to write dummy data to the first physical page using the determined number of ones in the first physical page.

13. The method of claim 12 ,

wherein each of the multiple memory cells comprises multiple pages, including a lower page (LP), an upper page (UP), and an extra page (XP),

wherein determining the number of ones comprises determining the number of ones stored in the XPs of the first physical page of memory cells, and

wherein determining whether to write the dummy data to the first physical page comprises using the determined number of ones in the XPs of the first physical page.

14. The method of claim 13 ,

wherein determining whether to write the dummy data to the first physical page comprises comparing the determined number of ones stored in the XPs of the first physical page to a threshold, and

wherein the method comprises writing the dummy data to the first physical page of memory cells if the determined number of ones stored in the XPs of the first physical page is less than the threshold.

15. The method of claim 14 ,

wherein the threshold is a function of a number of memory cells in the first physical page and a number of bits in the multiple memory cells.

16. The method of claim 12 ,

wherein determining whether to write the dummy data to the first physical page comprises comparing the determined number of ones to a threshold, and

wherein the method comprises writing the dummy data to the first physical page of memory cells if the determined number of ones is less the threshold,

wherein the threshold is a function of a number of memory cells in the first physical page and a number of bits in the multiple memory cells.

17. At least one non-transitory device-readable storage medium comprising instructions that, when executed by a controller of a storage system, cause the controller to perform operations comprising:

detecting an asynchronous power loss (APL) at the storage system;

in response to the detected APL, determining a number of ones stored in a first physical page of memory cells of the storage system; and

determining whether to write dummy data to the first physical page using the determined number of ones in the first physical page.

18. The at least one non-transitory device-readable storage medium of claim 17 ,

wherein each of the multiple memory cells comprises multiple pages, including a lower page (LP), an upper page (UP), and an extra page (XP),

wherein determining the number of ones comprises determining the number of ones stored in the XPs of the first physical page of memory cells, and

wherein determining whether to write the dummy data to the first physical page comprises using the determined number of ones in the XPs of the first physical page.

19. The at least one non-transitory device-readable storage medium of claim 18 ,

wherein determining whether to write the dummy data to the first physical page comprises comparing the determined number of ones stored in the XPs of the first physical page to a threshold, and

wherein the operations further comprise writing the dummy data to the first physical page of memory cells if the determined number of ones stored in the XPs of the first physical page is less than the threshold,

wherein the threshold is a function of a number of memory cells in the first physical page and a number of bits in the multiple memory cells.

20. The at least one non-transitory device-readable storage medium of claim 17 ,

wherein determining whether to write the dummy data to the first physical page comprises comparing the determined number of ones to a threshold, and

wherein the operations further comprise writing the dummy data to the first physical page of memory cells if the determined number of ones is less the threshold,

wherein the threshold is a function of a number of memory cells in the first physical page and a number of bits in the multiple memory cells.