Crucible having an improved crystal growth base for manufacturing silicon carbide single crystal and method of use
A silicon carbide single crystal manufacturing apparatus includes a crucible constituted by a crucible body and a crucible lid and a base having a crucible lid side surface supported by the lower surface of the crucible lid, and a seed crystal mounting surface on which the seed crystal is mounted and which is a surface on the opposite side of the crucible lid side surface, wherein the base is made of graphite material, the area of the seed crystal mounting surface is larger than the area of the crucible lid side surface, and the base has at least of a portion in which the cross-sectional area orthogonal to the vertical direction connecting the crucible lid side surface and the seed crystal mounting surface is gradually reduced, and a portion that is getting smaller gradually, from the surface of the seed crystal mounting surface toward the crucible lid side surface.
1. A silicon carbide single crystal manufacturing apparatus, comprising:
a crucible comprising a crucible body and a crucible lid; and
a base comprising a crucible lid side surface supported by a lower surface of the crucible lid and a seed crystal mounting surface operable to have a seed crystal mounted thereon, wherein the seed crystal mounting surface is disposed on a side of the base opposite from the crucible lid side surface,
wherein the base is made of graphite material,
the area of the seed crystal mounting surface is larger than the area of the crucible lid side surface, and a cross-sectional area of the base orthogonal to a vertical direction connecting the crucible lid side surface and the seed crystal mounting surface is continuously reduced from the seed crystal mounting surface toward the crucible lid side surface.
2. The silicon carbide single crystal manufacturing apparatus according to claim 1 ,
wherein the base has a truncated cone shape.
3. The silicon carbide single crystal manufacturing apparatus according to claim 1 ,
wherein, assuming that the crucible lid side surface of the base is circular and has a radius r 1 , the seed crystal mounting surface is circular and has a radius r 2 , and a height of the base is h, (r 2 −r 1 )/h>0.15 is satisfied.
4. The silicon carbide single crystal manufacturing apparatus according to claim 3 ,
wherein the radius r 1 , the radius r 2 , and the height h satisfy (r 2 −r 1 )/h>0.30.
5. The silicon carbide single crystal manufacturing apparatus according to claim 1 ,
wherein the base is made of a graphite material with a Young's modulus of 5 GPa or more.
6. A method of manufacturing a silicon carbide single crystal, comprising:
providing a crucible comprising a crucible body, a crucible lid and a base, the base comprising a crucible lid side surface supported by a lower surface of the crucible lid and a seed crystal mounting surface operable to have a seed crystal mounted thereon, wherein the seed crystal mounting surface is disposed on a side of the base opposite from the crucible lid side surface;
mounting the seed crystal to the seed crystal mounting surface and placing a silicon carbide raw material in the crucibles;
sublimating the silicon carbide raw material to form a sublimation gas; and
precipitating the sublimation gas on the seed crystal to grow the silicon carbide single crystal,
wherein the base is made of graphite material,
an area of the seed crystal mounting surface is larger than an area of the crucible lid side surface, and
a cross-sectional area of the base orthogonal to a vertical direction connecting the crucible lid side surface and the seed crystal mounting surface is continuously reduced from the seed crystal mounting surface toward the crucible lid side surface.
7. The method of manufacturing a silicon carbide single crystal according to claim 6 ,
wherein a stress buffering member is arranged between the seed crystal and the base.
8. The method of manufacturing a silicon carbide single crystal according to claim 7 ,
wherein the stress buffering member has a Young's modulus of less than 5 GPa.
9. The method of manufacturing a silicon carbide single crystal according to claim 6 ,
wherein an outer diameter of the seed crystal is 150 mm or more.
10. The method of manufacturing a silicon carbide single crystal according to claim 9 ,
wherein the outer diameter of the seed crystal is 200 mm or more.
11. A silicon carbide single crystal manufacturing apparatus, comprising:
a crucible comprising a crucible body and a crucible lid; and
a base consisting of a cross-sectional area reduction portion and a cross-sectional area invariant portion, wherein the cross-sectional area reduction portion comprises a crucible lid side surface of the base supported by a lower surface of the crucible lid and the cross-sectional area invariant portion comprises a seed crystal mounting surface operable to have a seed crystal mounted thereon, wherein the seed crystal mounting surface is disposed on a side of the base opposite from the crucible lid side surface,
wherein the base is made of graphite material, the area of the seed crystal mounting surface is larger than the area of the crucible lid side surface, and a cross-sectional area of the base orthogonal to a vertical direction connecting the crucible lid side surface and the seed crystal mounting surface is invariant in the cross-sectional area invariant portion, and the cross-sectional area of the cross-sectional area reduction portion is continuously reduced from a boundary between the cross-sectional area invariant portion and the cross-sectional area reduction portion toward the crucible lid side surface.