IGZO sputtering target
An object of the present invention is to provide an IGZO sputtering target capable of improving uniformity for at least one property selected from the number of microcracks in the structure, the number of pores in the sintered body structure, and surface roughness. The IGZO sputtering target according to the present invention has an oxide sintered body, the oxide sintered body comprising indium (In), gallium (Ga), zinc (Zn) and unavoidable impurities, wherein, on a surface of the oxide sintered body, a lightness difference ΔL* satisfies ΔL*<3.0, in which the ΔL* is obtained by subtracting lightness Lc*at a central portion on the surface from lightness Le* at a position of 10 mm from an end portion to the central portion side on the surface, and wherein the oxide sintered body has a relative density of 97.0% or more.
1. A sputtering target having an oxide sintered body, the oxide sintered body comprising indium (In), gallium (Ga), zinc (Zn), and unavoidable impurities,
wherein, on a surface of the oxide sintered body, an absolute value of a lightness difference ΔL* satisfies ΔL*<3.0, in which the ΔL* is obtained by subtracting lightness Lc* at a central portion on the surface from lightness Le* at a position of 10 mm from an end portion to the central portion side on the surface,
wherein the oxide sintered body has a relative density of 97.0% or more; and,
wherein the oxide sintered body has at least a size such that a measurement position of Le* is located outside a measurement position of Lc*.
2. The IGZO sputtering target according to claim 1 , wherein the oxide sintered body has a grain size in a structure of from 1.5 μm to 15 μm.
3. The IGZO sputtering target according to claim 1 , wherein the relative density of the oxide sintered body is 99.3% or less.
4. The IGZO sputtering target according to claim 1 , wherein the oxide sintered body has a circular flat plate shape, a rectangular flat plate shape, or a cylindrical shape.
5. The IGZO sputtering target according to claim 1 , wherein when an In content in the oxide sintered body is 100, a Ga content in the anode is 70 to 130 and a Zn content in the anode is 70 to 130 in atomic number ratio with respect to the In content.
6. The IGZO sputtering target according to claim 1 , wherein the oxide sintered body has a thickness of 15 mm or less.