Semiconductor devices including backside power rails and methods of manufacture
A method of forming a semiconductor device including performing an ion implantation on a substrate and etching the substrate and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a transistor on a first side of a substrate; performing an ion implantation on a second side of the substrate opposite the first side; after performing the ion implantation, etching the substrate to remove the substrate and form a first recess; and forming a dielectric layer in the first recess.
1. A method comprising:
forming a transistor on a first side of a substrate;
performing an ion implantation on a second side of the substrate opposite the first side;
after performing the ion implantation, etching the substrate to remove the substrate and form a first recess;
forming a dielectric layer in the first recess;
etching the substrate to form a second recess;
epitaxially growing a first epitaxial material in the second recess; and
replacing the first epitaxial material with a first contact after forming the dielectric layer.
2. The method of claim 1 , wherein the ion implantation is used to implant a species selected from helium (He), boron (B), boron fluoride (BF 2 ), carbon (C), oxygen (O), nitrogen (N), fluorine (F), argon (Ar), germanium (Ge), xenon (Xe), silicon (Si), gallium (Ga), arsenic (As), phosphorus (P), diphosphorus (P 2 ), indium (In), and antimony (Sb) into the substrate.
3. The method of claim 1 , wherein the ion implantation is performed with an implant energy ranging from about 100 eV to about 60 keV.
4. The method of claim 1 , wherein the ion implantation is performed at a temperature ranging from −300° C. to 30° C.
5. The method of claim 1 , wherein the ion implantation is performed with a dosage ranging from 1×10 13 atoms/cm 2 to 1×10 16 atoms/cm 2 .
6. The method of claim 1 , further comprising etching the substrate to remove the substrate and to expose the first epitaxial material.
7. The method of claim 1 , further comprising forming an epitaxial source/drain region over the first epitaxial material, wherein replacing the first epitaxial material comprises removing the first epitaxial material to expose the epitaxial source/drain region.
8. A method comprising:
forming a fin extending from a substrate;
etching the fin to form a first recess;
forming a dummy fin in the first recess;
forming a source/drain region in the first recess over the dummy fin;
implanting ions into the substrate;
etching the substrate to remove the substrate and form a second recess exposing sidewalls of the dummy fin;
forming a dielectric layer in the second recess adjacent the dummy fin; and
replacing the dummy fin with a contact structure.
9. The method of claim 8 , wherein the substrate comprises silicon and the dummy fin comprises silicon germanium.
10. The method of claim 9 , wherein the source/drain region comprises silicon germanium, and wherein a germanium concentration of the source/drain region is less than a germanium concentration of the dummy fin.
11. The method of claim 8 , wherein replacing the dummy fin with the contact structure comprises etching the dummy fin to remove the dummy fin and form a third recess exposing the source/drain region, wherein the method further comprises forming a silicide region in the third recess over the source/drain region.
12. The method of claim 8 , wherein implanting the ions into the substrate damages a crystal structure of the substrate.
13. The method of claim 8 , wherein implanting the ions into the substrate increases an etch rate of the substrate.
14. The method of claim 8 , wherein implanting the ions into the substrate increases an etch selectivity of the substrate relative to the dummy fin.
15. A method comprising:
depositing an etch stop layer over a substrate;
depositing a multi-layer stack over the substrate, the multi-layer stack comprising alternating layers of a first semiconductor material and a second semiconductor material;
forming a first recess extending through the multi-layer stack and the etch stop layer;
depositing a first epitaxial material in the first recess;
forming an epitaxial source/drain region in the first recess over the first epitaxial material;
performing an ion implantation on the substrate;
etching the substrate to form a second recess exposing the etch stop layer and sidewalls of the first epitaxial material; and
forming a dielectric structure in the second recess.
16. The method of claim 15 , further comprising:
etching the first epitaxial material to form a third recess exposing the epitaxial source/drain region; and
forming a contact structure in the third recess.
17. The method of claim 15 , wherein the etch stop layer and the first epitaxial material comprise silicon germanium, and wherein the substrate comprises silicon.
18. The method of claim 15 , further comprising performing a planarization process on the substrate prior to performing the ion implantation, wherein the planarization process exposes the first epitaxial material.
19. The method of claim 15 , further comprising:
etching a first layer of the multi-layer stack comprising the first semiconductor material to form a third recess; and
forming a gate structure in the third recess adjacent a second layer of the multi-layer stack comprising the second semiconductor material.
20. The method of claim 15 , wherein forming the dielectric structure comprises:
depositing a dielectric liner in the second recess, the dielectric liner comprising a nitride; and
depositing a dielectric layer in the second recess over the dielectric liner, the dielectric layer comprising an oxide.