Semiconductor structure and method of fabricating the semiconductor structure
The present disclosure provides a semiconductor structure, including a substrate having a front surface, a first semiconductor layer proximal to the front surface, a second semiconductor layer over the first semiconductor layer, a gate having a portion between the first semiconductor layer and the second semiconductor layer, a spacer between the first semiconductor layer and the second semiconductor layer, contacting the gate, and a source/drain (S/D) region, wherein the S/D region is in direct contact with a bottom surface of the second semiconductor layer, and the spacer has an upper surface interfacing with the second semiconductor layer, the upper surface including a first section proximal to the S/D region, a second section proximal to the gate, and a third section between the first section and the second section.
1. A semiconductor structure, comprising:
a substrate having a front surface;
a first semiconductor layer proximal to the front surface;
a second semiconductor layer over the first semiconductor layer;
a gate having a portion between the first semiconductor layer and the second semiconductor layer;
a spacer between the first semiconductor layer and the second semiconductor layer, contacting the gate and the first semiconductor layer; and
a source/drain (S/D) region, wherein the S/D region is in direct contact with a bottom surface of the second semiconductor layer, wherein an interface between the spacer and the first semiconductor layer comprises:
a first section proximal to the S/D region;
a second section proximal to the gate; and
a third section between the first section and the second section,
wherein an absolute value of a derivative at the third section is greater than an absolute value of a derivative at the second section.
2. The semiconductor structure of claim 1 , wherein an absolute value of a derivative at the second section is less than 0.3.
3. The semiconductor structure of claim 1 , wherein the absolute value of the derivative at the third section is in a range from 0.3 to 2.
4. The semiconductor structure of claim 1 , wherein the gate comprises:
a metal gate material;
a high-k material surrounding the metal gate material; and
a dielectric layer surrounding the high-k material.
5. The semiconductor structure of claim 4 , the spacer is in direct contact with the high-k material and the dielectric layer.
6. The semiconductor structure of claim 1 , wherein the spacer is in direct contact with the S/D region.
7. The semiconductor structure of claim 1 , a portion of the S/D region is spacing between the first semiconductor layer and the second semiconductor layer.
8. The semiconductor structure of claim 1 , wherein the first section, the second section, and the third section together define a step configuration of the interface.
9. A semiconductor structure, comprising:
a substrate having a front surface;
a first semiconductor layer in proximal to the front surface;
a second semiconductor layer over the first semiconductor layer, wherein:
a first vertical dimension is an entire distance between a first part of a lower surface of the second semiconductor layer and a first part of a top surface of the first semiconductor layer;
a second vertical dimension is an entire distance between a second part of the lower surface of the second semiconductor layer and a second part of the top surface of the first semiconductor layer, the second vertical dimension is greater than the first vertical dimension; and
a first part and a second part of the lower surface of the second semiconductor layer together defines a step configuration, and a first part and a second part of the top surface of the first semiconductor layer together defines a step configuration;
a gate having a portion between the first semiconductor layer and the second semiconductor layer; and
a spacer, wherein the spacer comprises:
a first portion in direct contact with the first part of the lower surface of the second semiconductor layer and the first part of the top surface of the first semiconductor layer; and
a second portion in direct contact with the second part of the lower surface of the second semiconductor layer and the second part of the top surface of the first semiconductor layer.
10. The semiconductor structure of claim 9 , further comprising an S/D region, wherein an interface between the spacer and the S/D region is free from being aligned with a sidewall of the second semiconductor layer.
11. The semiconductor structure of claim 9 , wherein a first lateral distance between the first portion of the spacer and the gate is less than a second lateral distance between the second portion of the spacer and the gate.
12. The semiconductor structure of claim 9 , wherein the first semiconductor layer and the second semiconductor layer comprises silicon.
13. The semiconductor structure of claim 9 , wherein the spacer further comprises a third portion in direct contact with the gate.
14. A semiconductor structure, comprising:
a first semiconductor layer, disposed over a portion of a substrate;
a second semiconductor layer, stacked over the first semiconductor layer, and including a lower surface; and
a gate, disposed between the first semiconductor layer and the second semiconductor layer;
a spacer, disposed on a lateral side of the gate, and contacting the first semiconductor layer, wherein an interface between the spacer and the first semiconductor layer has a step configuration; and
a source/drain (S/D) region, disposed laterally adjacent to the gate, the first semiconductor layer, and the second semiconductor layer, wherein the S/D region is in direct contact with a portion of a bottom surface of the second semiconductor layer.
15. The semiconductor structure of claim 14 , wherein the interface comprises:
a first section, being proximal to the S/D region;
a second section, being proximal to the gate; and
a third section, being between the first section and the second section,
wherein an absolute value of a derivative at the third section is in a range of from about 0.3 to about 2.
16. The semiconductor structure of claim 15 , wherein an absolute value of a derivative at the first section is less than 0.3.
17. The semiconductor structure of claim 15 , wherein an absolute value of a derivative at the second section is less than 0.3.
18. The semiconductor structure of claim 15 , wherein an absolute value of a derivative at the second section is lower than the absolute value of the derivative at the third section.
19. The semiconductor structure of claim 14 , wherein the gate comprises:
a metal gate material;
a high-k material, surrounding the metal gate material; and
a dielectric layer, surrounding the high-k material.
20. The semiconductor structure of claim 14 , wherein the spacer is in contact with the second semiconductor layer, and an interface between the spacer and the second semiconductor layer has a step configuration substantially mirror to the step configuration of the interface between the spacer and the first semiconductor layer.