Laminated member

1. A laminated member comprising:

a glass member of which a linear transmittance at a wavelength of 850 nm is 80% or more;

a bonding layer provided on or above the glass member, the bonding layer being constituted by a resin; and

a Si—SiC member provided on or above the bonding layer and wherein, a density of the laminated member is 2.45 g/cm 3 to 2.95 g/cm 3 .

2. The laminated member according to claim 1 , wherein the linear transmittance of the glass member at a wavelength of 850 nm is 90% or more.

3. The laminated member according to claim 1 , wherein a thermal conductivity of the Si—SiC member is 190 W/m·K to 300 W/m·K.

4. The laminated member according to claim 1 , wherein a thickness of the glass member is 2 mm to 40 mm, and

a thickness of the Si—SiC member is 0.5 mm to 10 mm.

5. The laminated member according to claim 1 , wherein an absolute value |α-β| of a value obtained by subtracting a mean linear expansion coefficient β of the glass member at 20° C. to 200° C. from a mean linear expansion coefficient α of the Si—SiC member at 20° C. to 200° C. is 2.0 ppm/° C. or less.

6. The laminated member according to claim 1 , wherein the mean linear expansion coefficient α of the Si—SiC member at 20° C. to 200° C. is 2.10 ppm/° C. to 4.00 ppm/° C.

7. The laminated member according to claim 1 , wherein a Young's modulus of the Si—SiC member is 300 GPa to 420 GPa.

8. The laminated member according to claim 1 , wherein the resin is a resin of which a tolerable temperature is 230° C. to 500° C.

9. The laminated member according to claim 1 , wherein a ratio of a content of metallic silicon in the Si—SiC member is 8 wt % to 60 wt %.

10. The laminated member according to claim 1 , wherein an amount of bending of the laminated member is 0.25 mm or less.

11. The laminated member according to claim 1 , further comprising:

a second bonding layer provided on or above the Si—SiC member; and

a second Si—SiC member bonded to the Si—SiC member via the second bonding layer.