Integrated circuit for memory
An integrated circuit is provided. The integrated circuit includes: a first data line group, including a plurality of local data lines arranged in an array; a second data line group, including a plurality of complementary local data lines arranged in an array, the plurality of complementary local data lines and the plurality of local data lines respectively transmitting signals having opposite phases; and a plurality of read circuits, configured to read, in response to a read control signal, signals of the local data lines or the complementary local data lines during a read operation, each of the plurality of read circuits being electrically connected to a local data line at a boundary of the first data line group or connected to a complementary local data line at a boundary of the second data line group.
1. An integrated circuit, comprising:
a first data line group, comprising a plurality of local data lines arranged in an array;
a second data line group, comprising a plurality of complementary local data lines arranged in a second array, wherein the plurality of complementary local data lines and the plurality of local data lines respectively transmit signals having opposite phases; and
a plurality of read circuits, configured to read, in response to a read control signal, signals of the plurality of local data lines or the plurality of complementary local data lines during a read operation, wherein each of the plurality of read circuits is electrically connected to a local data line of the plurality of local data lines at a boundary of the first data line group or connected to a complementary local data line of the plurality of complementary local data lines at a boundary of the second data line group;
wherein the plurality of local data lines comprise a first local data line, a second local data line, a third local data line, and a fourth local data line arranged in sequence, the plurality of complementary local data lines comprise a second complementary local data line, a first complementary local data line, a fourth complementary local data line, and a third complementary local data line arranged in sequence, and the first local data line, the fourth local data line, the second complementary local data line, and the third complementary local data line are electrically connected to one of the plurality of read circuits, respectively; and
wherein the first local data line and the first complementary local data line, the second local data line and the second complementary local data line, the third local data line and the third complementary local data line, and the fourth local data line and the fourth complementary local data line each transmit signals having opposite phases.
2. The integrated circuit of claim 1 , wherein at least one of:
the plurality of local data lines are equally spaced apart; or
the plurality of complementary local data lines are equally spaced apart.
3. The integrated circuit of claim 1 , wherein at least one of:
a spacing between the first local data line and the second local data line is greater than a spacing between the second local data line and the third local data line; or
a spacing between the third local data line and the fourth local data line is greater than the spacing between the second local data line and the third local data line.
4. The integrated circuit of claim 1 , wherein at least one of:
a spacing between the first local data line and the second local data line is greater than a spacing between the second local data line and the third local data line; or
a spacing between the third local data line and the fourth local data line is equal to the spacing between the second local data line and the third local data line.
5. The integrated circuit of claim 1 , wherein at least one of:
a spacing between the second complementary local data line and the first complementary local data line is greater than a spacing between the first complementary local data line and the fourth complementary local data line; or
a spacing between the fourth complementary local data line and the third complementary local data line is greater than the spacing between the first complementary local data line and the fourth complementary local data line.
6. The integrated circuit of claim 1 , wherein at least one of:
a spacing between the second complementary local data line and the first complementary local data line is greater than a spacing between the first complementary local data line and the fourth complementary local data line; or
a spacing between the fourth complementary local data line and the third complementary local data line is equal to the spacing between the first complementary local data line and the fourth complementary local data line.
7. The integrated circuit of claim 1 , further comprising: one or more shield lines;
wherein at least one of:
a shield line of the one or more shield lines is provided between the first local data line and the second local data line; or
a shield line of the one or more shield lines is provided between the third local data line and the fourth local data line.
8. The integrated circuit of claim 1 , further comprising: one or more shield lines;
wherein at least one of:
a shield line of the one or more shield lines is provided between the second complementary local data line and the first complementary local data line; or
a shield line of the one or more shield lines is provided between the fourth complementary local data line and the third complementary local data line.
9. The integrated circuit of claim 1 , further comprising: a plurality of shield lines;
wherein the plurality of shield lines are provided between the first local data line and the second local data line, between the third local data line and the fourth local data line, between the second complementary local data line and the first complementary local data line, and between the fourth complementary local data line and the third complementary local data line.
10. The integrated circuit of claim 1 , further comprising: a plurality of global data lines and a plurality of complementary global data lines, wherein the plurality of global data lines and the plurality of complementary global data lines transmit signals having opposite phases, and the plurality of read circuits are configured to transmit, in response to the read control signal, the signals of the plurality of local data lines or the plurality of complementary local data lines to the plurality of global data lines or the plurality of complementary global data lines during the read operation.
11. The integrated circuit of claim 10 , wherein each of the plurality of read circuits comprises a first N-channel metal oxide semiconductor (NMOS) transistor and a second NMOS transistor.
12. The integrated circuit of claim 11 , wherein
a source of the first NMOS transistor is grounded, a drain of the first NMOS transistor is electrically connected to a source of the second NMOS transistor, and a gate of the first NMOS transistor receives the read control signal; and
a gate of the second NMOS transistor is electrically connected to one of the plurality of local data lines or one of the plurality of complementary local data lines, and a drain of the second NMOS transistor is electrically connected to one of the plurality of complementary global data lines or one of the plurality of global data lines.
13. The integrated circuit of claim 11 , wherein
a source of the first NMOS transistor is grounded, a drain of the first NMOS transistor is electrically connected to a source of the second NMOS transistor, and a gate of the first NMOS transistor is electrically connected to one of the plurality of local data lines or one of the plurality of complementary local data lines; and
a gate of the second NMOS transistor receives the read control signal, and a drain of the second NMOS transistor is electrically connected to one of the plurality of complementary global data lines or one of the plurality of global data lines.
14. The integrated circuit of claim 10 , further comprising: a plurality of write units, configured to transmit, in response to a write control signal, the signals of at least one of the plurality of global data lines or the plurality of complementary global data lines to at least one of the plurality of local data lines or the plurality of complementary local data lines during a write operation.
15. The integrated circuit of claim 14 , wherein each write unit of the plurality of write units comprises a third NMOS transistor, a fourth NMOS transistor, and a fifth NMOS transistor;
a source of the third NMOS transistor is grounded, a gate of the third NMOS transistor receives the write control signal, and a drain of the third NMOS transistor is electrically connected to a source of the fourth NMOS transistor;
a gate of the fourth NMOS transistor is electrically connected to one of the plurality of global data lines, and a drain of the fourth NMOS transistor is electrically connected to one of the plurality of complementary local data lines; and
a source of the fifth NMOS transistor is electrically connected to the one of the plurality of global data lines, a gate of the fifth NMOS transistor receives the write control signal, and a drain of the fifth NMOS transistor is electrically connected to one of the plurality of local data lines.
16. The integrated circuit of claim 14 , wherein each write unit of the plurality of write units comprises a sixth NMOS transistor, a seventh NMOS transistor, and an eighth NMOS transistor;
a source of the sixth NMOS transistor is grounded, a gate of the sixth NMOS transistor receives the write control signal, and a drain of the sixth NMOS transistor is electrically connected to a source of the seventh NMOS transistor;
a gate of the seventh NMOS transistor is electrically connected to one of the plurality of complementary global data lines, and a drain of the seventh NMOS transistor is electrically connected to one of the plurality of local data lines; and
a source of the eighth NMOS transistor is electrically connected to the one of the plurality of complementary global data lines, a gate of the eighth NMOS transistor receives the write control signal, and a drain of the eighth NMOS transistor is electrically connected to one of the plurality of complementary local data lines.
17. The integrated circuit of claim 1 , further comprising: a plurality of amplification units, respectively connected between the plurality of local data lines and a corresponding one of the plurality of complementary local data lines and configured to amplify the signals of the plurality of local data lines and the signals of the plurality of complementary local data lines.
18. The integrated circuit of claim 1 , further comprising: a column selection unit, wherein one of the plurality of local data lines is connected to a bit line through the column selection unit, and one of the plurality of complementary local data lines is electrically connected to a complementary bit line through the column selection unit.
19. An integrated circuit, comprising:
a first data line group, comprising a plurality of local data lines arranged in an array;
a second data line group, comprising a plurality of complementary local data lines arranged in a second array, wherein the plurality of complementary local data lines and the plurality of local data lines respectively transmit signals having opposite phases;
a plurality of read circuits, configured to read, in response to a read control signal, signals of the plurality of local data lines or the plurality of complementary local data lines during a read operation, wherein each of the plurality of read circuits is electrically connected to a local data line of the plurality of local data lines at a boundary of the first data line group or connected to a complementary local data line of the plurality of complementary local data lines at a boundary of the second data line group; and
a plurality of global data lines and a plurality of complementary global data lines, wherein the plurality of global data lines and the plurality of complementary global data lines transmit signals having opposite phases, and the plurality of read circuits are configured to transmit, in response to the read control signal, the signals of the plurality of local data lines or the plurality of complementary local data lines to the plurality of global data lines or the plurality of complementary global data lines during the read operation;
wherein each of the plurality of read circuits comprises a first N-channel metal oxide semiconductor (NMOS) transistor and a second NMOS transistor,
a source of the first NMOS transistor is grounded, a drain of the first NMOS transistor is electrically connected to a source of the second NMOS transistor, and a gate of the first NMOS transistor receives the read control signal; and
a gate of the second NMOS transistor is electrically connected to one of the plurality of local data lines or one of the plurality of complementary local data lines, and a drain of the second NMOS transistor is electrically connected to one of the plurality of complementary global data lines or one of the plurality of global data lines.
20. An integrated circuit, comprising:
a first data line group, comprising a plurality of local data lines arranged in an array;
a second data line group, comprising a plurality of complementary local data lines arranged in a second array, wherein the plurality of complementary local data lines and the plurality of local data lines respectively transmit signals having opposite phases;
a plurality of read circuits, configured to read, in response to a read control signal, signals of the plurality of local data lines or the plurality of complementary local data lines during a read operation, wherein each of the plurality of read circuits is electrically connected to a local data line of the plurality of local data lines at a boundary of the first data line group or connected to a complementary local data line of the plurality of complementary local data lines at a boundary of the second data line group;
a plurality of global data lines and a plurality of complementary global data lines, wherein the plurality of global data lines and the plurality of complementary global data lines transmit signals having opposite phases, and the plurality of read circuits are configured to transmit, in response to the read control signal, the signals of the plurality of local data lines or the plurality of complementary local data lines to the plurality of global data lines or the plurality of complementary global data lines during the read operation; and
a plurality of write units, configured to transmit, in response to a write control signal, the signals of at least one of the plurality of global data lines or the plurality of complementary global data lines to at least one of the plurality of local data lines or the plurality of complementary local data lines during a write operation;
wherein each write unit of the plurality of write units comprises a third NMOS transistor, a fourth NMOS transistor, and a fifth NMOS transistor;
a source of the third NMOS transistor is grounded, a gate of the third NMOS transistor receives the write control signal, and a drain of the third NMOS transistor is electrically connected to a source of the fourth NMOS transistor;
a gate of the fourth NMOS transistor is electrically connected to one of the plurality of global data lines, and a drain of the fourth NMOS transistor is electrically connected to one of the plurality of complementary local data lines; and
a source of the fifth NMOS transistor is electrically connected to the one of the plurality of global data lines, a gate of the fifth NMOS transistor receives the write control signal, and a drain of the fifth NMOS transistor is electrically connected to one of the plurality of local data lines.