IP Library Granted Patent US 12,080,688
Granted Patent B2
US 12,080,688 · App. 17/578,817 · Granted Sep 3, 2024

Light-emitting diode packaging module

Inventors: Zhen-Duan Lin (Xiamen, CN); Yanqiu Liao (Xiamen, CN); Shuning Xin (Xiamen, CN); Weng-Tack Wong (Xiamen, CN); Junpeng Shi (Xiamen, CN); Aihua Cao (Xiamen, CN); Changchin Yu (Xiamen, CN); Chi-Wei Liao (Xiamen, CN); Chen-ke Hsu (Xiamen, CN); Zheng Wu (Xiamen, CN); Chia-en Lee (Xiamen, CN)
Assignee: Quanzhou Sanan Semiconductor Technoogy Co., Ltd.
H01L25/0753H01L33/38H01L33/54H01L33/62
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Quick Facts
Patent No.
US 12,080,688
App. No.
17/578,817
Granted
Sep 3, 2024
Kind
B2
Abstract

A light-emitting diode (LED) packaging module includes LED chips, a wiring layer, and an encapsulant component. Each of the LED chips includes a chip first surface, a chip second surface, a chip side surface, and an electrode unit. The wiring layer is disposed on the chip second surfaces of the LED chips, and contacts and is electrically connected to the electrode units. The encapsulant component includes a first encapsulating layer that covers the chip side surface, and a second encapsulating layer that covers the wiring layer. The LED chip has a thickness T A , the first encapsulating layer has a thickness T B , in which T B /T A ≥1.

Claims (57)

1. A light-emitting diode (LED) packaging module, comprising:

a plurality of LED chips that are spaced apart from one another, each of said LED chips including:

a chip first surface as a light-exiting surface,

a chip second surface opposite to said chip first surface,

a chip side surface that connects said chip first surface and said chip second surface, and

an electrode unit formed on said chip second surface;

a wiring layer that is disposed on said chip second surfaces of said LED chips, and that has a first wiring layer surface adjacent to said LED chips, a second wiring layer surface opposite to said first wiring layer surface, and a side wiring layer surface that is connected between said first wiring layer surface and said second wiring layer surface, said wiring layer being divided into a plurality of wiring parts that are spaced apart from each other, said first wiring layer surface contacting and being electrically connected to said electrode units of said LED chips; and

an encapsulant component including a first encapsulating layer that covers said chip side surface of each of said LED chips, and a second encapsulating layer that covers said side wiring layer surface of said wiring layer and that fills gaps among said wiring parts,

wherein

each of said LED chips has a thickness T A , said first encapsulating layer has a thickness T B , and T A and T B satisfy a relationship: T B /T A ≥1.

2. The LED packaging module as claimed in claim 1 , wherein

said thickness T A of each of said LED chips ranges from 5 μm to 15 μm;

said thickness T B of said first encapsulating layer ranges from 80 μm to 100 μm; and

said wiring layer has a thickness T C that ranges from 20 μm to 200 μm.

3. The LED packaging module as claimed in claim 2 , wherein (T B +T C )/T A ≥10 and (T B +T C )/T A ≤60.

4. The LED packaging module as claimed in claim 1 , wherein said first encapsulating layer includes a lower encapsulating layer and an upper encapsulating layer overlying said lower encapsulating layer opposite to said second encapsulating layer.

5. The LED packaging module as claimed in claim 1 , wherein each of said LED chips is a micro LED chip.

6. The LED packaging module as claimed in claim 1 , wherein at least two of said LED chips have different wavelengths.

7. The LED packaging module as claimed in claim 1 , wherein said electrode unit includes two electrodes disposed on said chip second surface.

8. The LED packaging module as claimed in claim 1 , wherein:

said encapsulant component further has a first encapsulating surface and a second encapsulating surface opposite to said first encapsulating surface, said first encapsulating surface facing in a same direction as said chip first surfaces of said LED chips;

at least two of said LED chips have different wavelengths;

wherein said chip first surfaces of at least two of said LED chips have a height difference that is greater than 0 μm and less than 5 μm.

9. The LED packaging module as claimed in claim 1 , wherein:

said first encapsulating layer includes a lower encapsulating layer and an upper encapsulating layer overlying said lower encapsulating layer opposite to said second encapsulating layer; and

said said first encapsulating layer includes a light-absorbing material.

10. The LED packaging module as claimed in claim 9 , wherein said upper encapsulating layer has a thickness that ranges from 5 μm to 20 μm.

11. The LED packaging module as claimed in claim 9 , wherein said first encapsulating layer has a light transmittance that is not greater than that of said second encapsulating layer.

12. The LED packaging module as claimed in claim 1 , wherein:

said second encapsulating surface of said encapsulant component and said second wiring layer surface are situated at a same side of said encapsulant component; and

said chip first surface of said blue LED chip has a surface height that is measured from said second encapsulating surface of said encapsulant component and that is smaller than those of said green LED chip and said red LED chip.

13. The LED packaging module as claimed in claim 1 , wherein:

said second encapsulating surface of said encapsulant component and said second wiring layer surface are situated at a same side of said encapsulant component; and

said chip first surface of said red LED chip has a surface height that is measured from said second encapsulating surface of said encapsulant component and that is smaller than those of each of said green LED chip and said blue LED chip.

14. The LED packaging module as claimed in claim 1 , wherein said LED packaging module has a thickness that ranges from 100 μm to 500 μm.

15. The LED packaging module as claimed in claim 1 , further comprising at least two welding pads disposed on said second encapsulating layer and electrically connected to said second wiring layer surface of said wiring layer.

16. The LED packaging module as claimed in claim 15 , wherein said encapsulant component further includes a third encapsulating layer overlying said second encapsulating layer opposite to said first encapsulating layer and situated at the side surface of the two welding pads.

17. The LED packaging module as claimed in claim 16 , wherein said third encapsulating layer includes black particles that has a size greater than black particles dispersed in said first encapsulating layer.

18. A light-emitting diode (LED) packaging module, comprising:

a plurality of LED chips that are spaced apart from each other, each of said LED chips including

a chip first surface as a light-exiting surface,

a chip second surface opposite to said chip first surface,

at least two electrodes disposed on said chip second surface, and

a chip side surface connected to said chip first surface and said chip second surface;

a wiring layer that is disposed on said chip second surfaces of said LED chips, and that has

a first wiring layer surface,

a second wiring layer surface opposite to said first wiring layer surface, and

a side wiring layer surface connected between said first wiring layer surface and said second wiring layer surface, said wiring layer being divided into a plurality of wiring parts that are spaced apart from each other, said first wiring layer surface contacting and being electrically connected to said electrodes of said LED chips;

an encapsulant component that covers said LED chips and said wiring layer, and fills gaps among said LED chips and gaps among said wiring parts, said encapsulant component including a first encapsulating surface, and a second encapsulating surface opposite to said first encapsulating surface; and

a light-transmitting layer that covers said chip first surfaces of said LED chips,

wherein

said first encapsulating surface of said encapsulant component faces in a same direction as said chip first surfaces of said LED chips,

said second encapsulating surface of said encapsulant component faces in a same direction as said second wiring layer surface of said wiring layer,

said chip first surfaces of at least two of said LED chips have a height difference that is greater than 0 μm and not greater than 15 μm, and

said at least two of said LED chips have different wavelengths.

19. The LED packaging module as claimed in claim 18 , wherein said encapsulant component has at least two layers, and one of said layers of said encapsulant component that fills gaps among said LED chips includes a light-absorbing material.

20. The LED packaging module as claimed in claim 18 , wherein said encapsulant component has a plurality of layers, one of said layers covering said wiring layer has a light transmittance greater than that of another one of said layers which covers said LED chips.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 20, 2026
From: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY CO., LTD.
To: HUBEI SANAN OPTOELECTRONICS CO.,LTD.
Reel/Frame 075700/0052 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 19, 2022
From: LIN, ZHEN-DUAN; LIAO, YANQIU; XIN, SHUNING; WONG, WENG-TACK; SHI, JUNPENG; CAO, AIHUA; YU, CHANGCHIN; LIAO, CHI-WEI; HSU, CHEN-KE; WU, ZHENG; LEE, CHIA-EN
To: QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD.
Reel/Frame 058694/0550 →
Priority Claims (2)
CN 201921192783.2 · Jul 26, 2019 · national
CN 201921553490.2 · Sep 18, 2019 · national
Continuity (2)
Continuation In Part PCTCN2020098501 · Jun 28, 2020
Related Publication 20220139890A1 · May 5, 2022