Acoustic wave device with overtone mode
Aspects of this disclosure relate to an acoustic wave device having an overtone mode as a main mode. The acoustic wave device is sufficiently asymmetric on opposing sides of a piezoelectric layer over an acoustic reflector such that the main mode of the acoustic wave device is the overtone mode.
1. An acoustic wave device comprising:
an acoustic reflector;
electrodes including a first electrode and a second electrode; and
a piezoelectric layer positioned between the first electrode and the second electrode, the acoustic wave device being sufficiently asymmetric on opposing sides of the piezoelectric layer over the acoustic reflector such that a main mode of the acoustic wave device is an overtone mode, a resonant frequency of the overtone mode is in a range from 5 gigahertz to 12 gigahertz, and the resonant frequency of the overtone mode is in a range from 1.5 to 2.5 times a resonant frequency of a fundamental mode of the acoustic wave device.
2. The acoustic wave device of claim 1 further comprising a passivation layer over the second electrode, the passivation layer having a thickness sufficient to create the overtone mode.
3. The acoustic wave device of claim 1 further comprising a dielectric layer over the second electrode, the dielectric layer having a thickness sufficient to create the overtone mode.
4. The acoustic wave device of claim 1 further comprising a silicon dioxide layer over the second electrode, the silicon dioxide layer having a thickness sufficient to create the overtone mode.
5. The acoustic wave device of claim 1 wherein the first electrode is thicker than the second electrode, and a thickness of the first electrode contributes to exciting the overtone mode.
6. The acoustic wave device of claim 1 wherein the resonant frequency of the overtone mode is in a range from 7 gigahertz to 10 gigahertz.
7. The acoustic wave device of claim 1 wherein the resonant frequency of the overtone mode is in a range from 1.5 to 2 times the resonant frequency of the fundamental mode of the acoustic wave device.
8. The acoustic wave device of claim 1 wherein the acoustic reflector is an air cavity.
9. The acoustic wave device of claim 1 wherein the acoustic reflector is a solid acoustic mirror.
10. The acoustic wave device of claim 1 wherein the piezoelectric layer is doped with a dopant.
11. A bulk acoustic wave device comprising:
an acoustic reflector;
a first electrode over the acoustic reflector;
a second electrode over the first electrode;
a piezoelectric layer positioned between the first electrode and the second electrode; and
a passivation layer over the second electrode, the passivation layer being sufficiently thick such that a main mode of the bulk acoustic wave device is an overtone mode, and a resonant frequency of the overtone mode is in a range from 1.5 to 2.5 times a resonant frequency of a fundamental mode of the bulk acoustic wave device.
12. The bulk acoustic wave device of claim 11 wherein the passivation layer is thicker than the second electrode.
13. The bulk acoustic wave device of claim 11 wherein the passivation layer is a silicon dioxide layer having a thickness in a range from 250 nanometers to 500 nanometers.
14. The bulk acoustic wave device of claim 11 wherein the piezoelectric layer is doped with a dopant.
15. The bulk acoustic wave device of claim 11 wherein a resonant frequency of the overtone mode is in a range from 5 gigahertz to 12 gigahertz.
16. The bulk acoustic wave device of claim 11 wherein a resonant frequency of the overtone mode is in a range from 7 gigahertz to 10 gigahertz.
17. The bulk acoustic wave device of claim 11 wherein a resonant frequency of the overtone mode is based on at least a thickness of passivation layer and a thickness of the piezoelectric layer.
18. The bulk acoustic wave device of claim 11 wherein the acoustic reflector is an air cavity.
19. An acoustic wave filter comprising:
a bulk acoustic wave device including an acoustic reflector, electrodes including a first electrode and a second electrode, and a piezoelectric layer positioned between the first electrode and the second electrode, the bulk acoustic wave device being sufficiently asymmetric on opposing sides of the piezoelectric layer over the acoustic reflector such that a main mode of the bulk acoustic wave device is an overtone mode, a resonant frequency of the overtone mode is in a range from 1.5 to 2.5 times a resonant frequency of a fundamental mode of the bulk acoustic wave device, and the resonant frequency of the overtone mode is in a range from 5 gigahertz to 12 gigahertz; and
a plurality of additional acoustic wave resonators, the bulk acoustic wave device and the plurality of additional acoustic wave resonators together configured to filter a radio frequency signal.
20. A bulk acoustic wave device comprising:
an acoustic reflector;
a first electrode over the acoustic reflector;
a second electrode over the first electrode;
a piezoelectric layer positioned between the first electrode and the second electrode; and
a silicon dioxide layer over the second electrode, the silicon dioxide layer being sufficiently thick such that a main mode of the bulk acoustic wave device is an overtone mode, and the silicon dioxide layer having a thickness in a range from 250 nanometers to 500 nanometers.