Field effect transistor with air spacer and method
A device includes a substrate, a gate structure, a capping layer, a source/drain region, a source/drain contact, and an air spacer. The gate structure wraps around at least one vertical stack of nanostructure channels over the substrate. The capping layer is on the gate structure. The source/drain region abuts the gate structure. The source/drain contact is on the source/drain region. The air spacer is between the capping layer and the source/drain contact.
1. A device, comprising:
a substrate;
a gate structure wrapping around at least one vertical stack of nanostructure channels over the substrate;
a capping layer on the gate structure;
a source/drain region abutting the gate structure;
a source/drain contact on the source/drain region; and
an air spacer positioned laterally between the capping layer and the source/drain contact, wherein the air spacer is entirely located within a vertical region defined by a lower boundary that is at or above a top surface of the gate structure and an upper boundary that is at or below a top surface of the capping layer.
2. The device of claim 1 , comprising:
a spacer layer between the air spacer and the capping layer.
3. The device of claim 1 , comprising:
a spacer layer below the air spacer and beside the gate structure.
4. The device of claim 1 , comprising:
a dielectric layer over the capping layer and the air spacer.
5. The device of claim 4 , wherein the dielectric layer includes:
an extension portion between the capping layer and the source/drain contact.
6. The device of claim 1 , wherein the air spacer has width in a range of about 1 nanometer to about 5 nanometers.
7. The device of claim 1 , wherein the air spacer has height in a range of about 5 nanometers to about 40 nanometers.
8. The device of claim 1 , comprising a spacer layer in contact with the gate structure, wherein the spacer layer has different etch selectivity than the capping layer.
9. The device of claim 1 , comprising a gate via extending through the capping layer to an upper surface of the gate structure.
10. The device of claim 1 , comprising:
an etch stop layer between the gate structure and the source/drain contact, and between the air spacer and the source/drain region.
11. A device comprising:
a substrate;
a gate structure wrapping around at least one vertical stack of nanostructure channels over the substrate;
a first source/drain contact over the substrate;
a second source/drain contact laterally offset from the first source/drain contact;
a capping layer laterally between the first and second source/drain contacts;
a first air spacer positioned laterally between the first source/drain contact and the capping layer; and
a second air spacer positioned laterally between the second source/drain contact and the capping layer,
wherein each of the first and second air spacers is entirely located within a vertical region defined by a lower boundary that is at or above a top surface of the gate structure and an upper boundary that is at or below a top surface of the capping layer.
12. The device of claim 11 , comprising:
a first etch stop layer between the first source/drain contact and the first air spacer; and
a second etch stop layer between the second source/drain contact and the second air spacer.
13. The device of claim 12 , comprising:
a third etch stop layer overlying the first and second air spacers, including:
a first seal portion laterally between the capping layer and the first etch stop layer; and
a second seal portion laterally between the capping layer and the second etch stop layer.
14. The device of claim 13 , wherein the first seal portion has height less than about 10 nanometers.
15. The device of claim 11 , comprising:
a first spacer layer in contact with the gate structure and the capping layer; and
a second spacer layer in contact with the gate structure and the capping layer;
wherein upper surfaces of the gate structure, the first spacer layer and the second spacer layer are substantially coplanar.
16. A method, comprising:
forming a gate structure over and wrapping around a vertical stack of nanostructures over a substrate;
forming a first capping layer on the gate structure;
removing the first capping layer;
forming a liner layer on vertical sidewalls of source/drain contacts on either side of the gate structure;
forming a second capping layer on the gate structure between the liner layer; and
forming air spacers by removing the liner layer.
17. The method of claim 16 , comprising:
sealing the air spacers by forming a first etch stop layer over the second capping layer, the source/drain contacts and the air spacers.
18. The method of claim 17 , comprising:
recessing spacer layers on either side of the gate structure prior to forming the liner layer.
19. The method of claim 18 , comprising:
recessing second etch stop layers on either side of the gate structure prior to forming the liner layer.
20. The method of claim 16 , wherein the forming a second capping layer includes:
forming a second capping layer having lower dielectric constant than that of the first capping layer.