Intelligent multi-level voltage gate driving system for semiconductor power devices
An improved gate driver using a microcontroller (uC), a voltage selector (VS), an adjustable voltage regulator (AVR), and an auxiliary current sinking circuit (ACSC) to actively provide selectable drive signals either higher, lower or equal to the basic on voltage and off voltage drive signals for a selected semiconductor device thereby providing an active voltage-mode gate driver for actively speeding up or slowing both the on time and off time transitions of a semiconductor.
1. An improved gate driver for providing a gate signal to a semiconductor power device controlled by a gate input with a time transition, comprising:
a power supply providing a main voltage signal;
an adjustable voltage regulator providing an adjusted voltage higher than the main voltage signal;
a voltage selector receiving both the main voltage signal and the adjusted voltage signal and selectively applying one of the received voltages as a selected voltage signal; and
a gate driver with a gate terminal, a pull up terminal, and a pull down terminal, the gate driver receiving the selected voltage signal at the pull up terminal and the pull down terminal, wherein the main voltage signal controls the semiconductor power device for a first time period and the adjusted voltage signal controls the semiconductor power device for a second time period shorter than the first time period; and
the gate driver receiving the main voltage signal after the second time period ends.
2. The improved gate driver of claim 1 , further comprising:
an auxiliary current sinking circuit connected through the voltage selector.
3. The improved gate driver of claim 1 , further comprising:
an auxiliary current sinking circuit connected through the gate driver.
4. The improved gate driver of claim 1 , further comprising:
an auxiliary current sinking circuit connected through both the voltage selector and the gate driver.