Ultra-fast modulator for modulating the amplitude of laser radiation

1. A device for modulating the amplitude of an incident laser radiation on said device and having a wavelength λ i , wherein the device comprises: a metal bottom layer above which there is a semiconductive layer which contains a stack of a plurality of quantum wells, above which there is a structured metal top layer, the two metal layers being reflective to the incident laser radiation, the structuring of the top layer and the distance between said two metal layers L-being small enough for the device to form an optical microcavity having at least one resonance mode;

at least a part of the quantum wells, called active wells, having an intersubband absorption at a central wavelength λ ISB =hc/E ISB , the coupling between said intersubband transition at said central wavelength λ ISB and one of the modes of the microcavity driving the excitation of cavity polaritons and a Rabi splitting at the energies E ISB ±ℏΩ Rabi with Ω Rabi the Rabi frequency;

said device comprising an electric circuit configured to apply two distinct voltage differences, V 0 and V 1 , between the two metal layers, the device absorbing the incident radiation for the voltage difference V 0 and the device reflecting or transmitting the incident radiation for the voltage difference V 1 .

2. The device as claimed in claim 1 , wherein the metal bottom layer does not have discontinuities and the device reflects the incident radiation for the voltage difference V 1 .

3. The device as claimed in claim 1 , wherein said metal top layer is formed by a plurality of metal strips of width s, separated by a distance a, with s+a<λ i /2.

4. The device as claimed in claim 3 , wherein the width of the metal strips s is such that s=λ i /2·n to ±30% with n the index of said semiconductive layer.

5. The device as claimed in claim 3 , wherein the width of the metal strips s=λ i /2·ns is such that s=3·λ i /2·n to ±30% with n the index of said semiconductive layer.

6. The device as claimed in claim 1 , wherein the contacts between the semiconductive layer and the metal layers are produced by Schottky contacts or by the introduction of insulating layers.

7. The device as claimed in claim 6 , wherein the distance between said two metal layers is equal to λ i /30 to ±30%.

8. The device as claimed in claim 7 , wherein the distance between the two metal layers is chosen by digital simulations so that said device operates in non-dispersive regime.

9. The device as claimed in claim 8 , wherein the quantum wells or the barriers separating the quantum wells are electronically doped, the quantum wells being chosen so that, for a first voltage difference V 0 applied by said electric circuit between said two metal layers, the device exhibits an absorption to the energies E ISB ±ℏΩ Rabi and not to the wavelengths equal to the resonance modes of the cavity and so that, for a second voltage difference V 1 , all the quantum wells of the semiconductive layer are depopulated of their charges, the device exhibits an absorption to the cavity resonance modes and not to the energies E ISB ±ℏΩ Rabi .

10. The device as claimed in claim 9 , wherein the thickness of the semiconductive layer is such that V 1 is less than the maximum voltage supported by the contacts between the semiconductive layer and the metal layers.

11. The device as claimed in claim 10 , wherein the thickness of the semiconductive layer is chosen so that V 1 is less than 10V.

12. The device as claimed in claim 1 , wherein the distance between said two metal layers is equal to λ i /10 to ±30%.

13. The device as claimed in claim 1 , wherein the semiconductive layer comprises a stack of coupled quantum wells composed of a non-doped narrow well, called active well, separated by a first barrier from a wide well, called reservoir, the coupled quantum wells being separated from one another on another side a second barrier wider than said first barrier, the first barrier or the reservoir of each coupled quantum well being electronically doped, the active wells being chosen in order for them to exhibit an intersubband absorption at a central wavelength λ ISB close to a resonance mode of said optical microcavity;

said coupled quantum wells being adapted so that, for a first voltage difference V 0 applied by said electric circuit between said two metal layers, the charges originating from the doping are transferred by tunnel effect into the narrow wells and the device exhibits an absorption to the energies E ISB ±ℏΩ Rabi and not to the wavelengths equal to the resonance modes of the cavity, and so that, for a second voltage difference V 1 , the device exhibits an absorption to the wavelengths equal to the resonance modes of the cavity and not to the energies E ISB ±ℏΩ Rabi .

14. The device as claimed in claim 13 , wherein the thickness of the semiconductive layer is chosen so that V 0 is less than or equal to 2V.

15. The device as claimed in claim 2 , wherein the semiconductive layer is structured so that the stacks of quantum wells are situated only directly below the metal strips of the metal top layer.

16. The device as claimed in claim 1 , wherein the quantum wells of the semiconductive layer are produced in GaAs/AlGaAs; InGaAs/AlInAs; InAs/AlSb, Si/SiGe, GaN/AlGaN.

17. The device as claimed in claim 1 , wherein a characteristic dimension of the device is less than 200 μm.

18. The device as claimed in claim 3 , wherein the metal bottom layer has discontinuities and is structured so that said device transmits the incident radiation for the voltage difference V 1 , said device comprising a substrate that is transparent to the incident radiation below the metal bottom layer and in contact therewith.