Structure manufacturing method and intermediate structure

1. A structure manufacturing method comprising:

preparing a treatment object that includes an etching target having a surface to be etched comprising a conductive group III nitride and a region to be etched located on the surface to be etched, a conductive member that is provided so as to be in contact with at least a portion of a surface of a conductive region of the etching target that is electrically connected to the region to be etched, and a mask formed on the surface to be etched and comprising a non-conductive material; and

etching the group III nitride that constitutes the region to be etched by immersing the treatment object in an alkaline or acidic etching solution containing peroxodisulfate ions as an oxidizing agent that accepts electrons, and irradiating the surface to be etched with light through the etching solution in a state where the region to be etched and the conductive member are in contact with the etching solution,

wherein an edge that defines the region to be etched is constituted by an edge of the mask without including an edge of the conductive member.

2. The structure manufacturing method according to claim 1 ,

wherein the distance between the edge of the mask that defines the region to be etched and the edge of the conductive member is 5 μm or more.

3. The structure manufacturing method according to claim 1 ,

wherein, in the etching of the group III nitride that constitutes the region to be etched, the etching is performed such that an edge of a recessed portion is formed through the etching along the edge that defines the region to be etched.

4. The structure manufacturing method according to claim 1 ,

wherein the mask is formed of a resist, and

the etching solution is acidic.

5. The structure manufacturing method according to claim 1 ,

wherein the group III nitride undergoes etching in a state where an upper surface of a portion of the conductive member that is provided on the surface to be etched is in contact with the etching solution.

6. The structure manufacturing method according to claim 1 ,

wherein the etching target is used as a material of a high-electron-mobility transistor, and

the conductive member is used as an electrode of the high-electron-mobility transistor.

7. The structure manufacturing method according to claim 6 ,

wherein a recessed portion formed by etching the region to be etched is used as a device separation groove in the high-electron-mobility transistor.

8. The structure manufacturing method according to claim 1 ,

wherein the conductive member is disposed along an outer periphery of the etching target in a plan view.

9. The structure manufacturing method according to claim 1 ,

wherein the etching target includes a semi-insulating substrate.

10. The structure manufacturing method according to claim 9 ,

wherein the conductive member is provided on a group III nitride layer formed on the semi-insulating substrate.

11. The structure manufacturing method according to claim 10 ,

wherein the area where the conductive member comes into contact with the etching solution is 1% or more of the total area of the surface to be etched that serves as an upper surface of the group III nitride layer.

12. The structure manufacturing method according to claim 1 ,

wherein the etching target includes a conductive substrate.

13. The structure manufacturing method according to claim 12 ,

wherein the conductive member is disposed on a surface of the conductive substrate.

14. An intermediate structure comprising:

an etching target having a surface to be etched comprising a conductive group III nitride and a region to be etched located on the surface to be etched;

a conductive member that is provided so as to be in contact with at least a portion of a surface of a conductive region of the etching target that is electrically connected to the region to be etched; and

a mask formed on the surface to be etched and comprising a non-conductive material,

wherein the intermediate structure is immersed in an alkaline or acidic etching solution containing peroxodisulfate ions as an oxidizing agent that accepts electrons, in a state where the region to be etched is in contact with the conductive member, and

an edge that defines the region to be etched is constituted by an edge of the mask without including an edge of the conductive member.

15. The intermediate structure according to claim 14 ,

wherein the distance between the edge of the mask that defines the region to be etched and the edge of the conductive member is 5 μm or more.

16. The intermediate structure according to claim 14 ,

wherein the mask is formed of a resist.

17. The intermediate structure according to claim 14 ,

wherein the etching target is used as a material of a high-electron-mobility transistor, and

the conductive member is used as an electrode of the high-electron-mobility transistor.

18. The intermediate structure according to claim 14 ,

wherein the conductive member is disposed along an outer periphery of the etching target in a plan view.

19. The intermediate structure according to claim 14 ,

wherein the etching target includes a semi-insulating substrate.

20. The intermediate structure according to claim 14 ,

wherein the etching target includes a conductive substrate.

21. The intermediate structure according to claim 20 ,

wherein the conductive member is disposed on a surface of the conductive substrate.

22. A structure manufacturing method comprising:

preparing a treatment object that includes an etching target having a surface to be etched comprising a conductive group III nitride and a region to be etched located on the surface to be etched, and a conductive member that is provided so as to be in contact with at least a portion of a surface of a conductive region of the etching target that is electrically connected to the region to be etched; and

etching the group III nitride that constitutes the region to be etched by immersing the treatment object in an alkaline or acidic etching solution containing an oxidizing agent that accepts electrons, and irradiating the surface to be etched with light through the etching solution in a state where the region to be etched and the conductive member are in contact with the etching solution,

wherein an edge that defines the region to be etched is not constituted by an edge of the conductive member alone, and

the conductive member is disposed along an outer periphery of the etching target in a plan view.

23. An intermediate structure comprising:

an etching target having a surface to be etched comprising a conductive group III nitride and a region to be etched located on the surface to be etched; and

a conductive member that is provided so as to be in contact with at least a portion of a surface of a conductive region of the etching target that is electrically connected to the region to be etched,

wherein the intermediate structure is immersed in an alkaline or acidic etching solution containing an oxidizing agent that accepts electrons, in a state where the region to be etched is in contact with the conductive member,

an edge that defines the region to be etched is not constituted by an edge of the conductive member alone, and

the conductive member is disposed along an outer periphery of the etching target in a plan view.