IP Library Assignment 061961/0204
Patent Assignment
Reel/Frame 061961/0204

Merger

Recorded: 2022-11-17 Pages: 45
Assignor
SCIOCS COMPANY LIMITED
Executed: 2022-10-13
Assignee
SUMITOMO CHEMICAL COMPANY, LIMITED
2-7-1, NIHONBASHI, CHUO-KU, TOKYO, TOKYO, 103-6020, JAPAN
Covered Properties (32)
Crystal Laminate, Semiconductor Device and Method for Manufacturing the Same
Application: 16/617,799 →
Publication: US 2020/0227262
Nitride Crystal Substrate, Semiconductor Laminate, Method of Manufacturing Semiconductor Laminate and Method of Manufacturing Semiconductor Device
Application: 16/617,802 →
Publication: US 2020/0208297
Nitride Semiconductor Laminate, Semiconductor Device, Method of Manufacturing Nitride Semiconductor Laminate, Method of Manufacturing Nitride Semiconductor Free-Standing Substrate and Method of Manufacturing Semiconductor Device
Application: 16/621,605 →
Publication: US 2020/0219983
Nitride Semiconductor Substrate, Laminate, Substrate Selection Program, Substrate Data Output Program, Off-Angle Coordinate Map, and Methods Thereof
Application: 16/759,004 →
Publication: US 2021/0184003
Group-Iii Nitride Laminate
Application: 16/906,247 →
Publication: US 2020/0399184
Group-Iii Nitride Laminate
Application: 16/906,270 →
Publication: US 2021/0005717
Method for Producing Nitride Semiconductor Laminate, Silicon Semiconductor Product, Method for Inspecting Film Quality and Method for Inspecting Semiconductor Growth Device
Application: 17/055,539 →
Publication: US 2021/0215621
Method for Manufacturing Nitride Semiconductor Substrate, Nitride Semiconductor Substrate and Layered Structure
Application: 17/272,101 →
Publication: US 2022/0005691
Method for Manufacturing Nitride Semiconductor Substrate, Nitride Semiconductor Substrate, and Laminate Structure
Application: 17/272,169 →
Publication: US 2021/0292931
Epitaxial Substrate
Application: 17/272,182 →
Publication: US 2022/0045177
Nitride Semiconductor Substrate, Method for Manufacturing Nitride Semiconductor Substrate, and Laminated Structure
Application: 17/272,201 →
Publication: US 2021/0317597
Structure Manufacturing Method Including Surface Photoelectrochemical Etching and Structure Manufacturing Device
Application: 17/286,198 →
Publication: US 2021/0351030
Method for Manufacturing Nitride Semiconductor Substrate, Nitride Semiconductor Substrate, and Laminate Structure
Application: 17/287,827 →
Publication: US 2021/0355601
Structure Manufacturing Method, Structure Manufacturing Apparatus and Intermediate Structure
Application: 17/289,199 →
Publication: US 2021/0313186
Nitride Semiconductor Substrate Manufacturing Method, and Laminated Structure
Application: 17/292,192 →
Publication: US 2021/0391427
Piezoelectric Stack, Piezoelectric Element, and Method of Manufacturing Piezoelectric Stack
Application: 17/299,951 →
Publication: US 2023/0135208
Structure Manufacturing Method and Manufacturing Device, and Light Irradiation Device
Application: 17/311,887 →
Publication: US 2022/0028737
Method for Manufacturing Nitride Semiconductor Substrate and Nitride Semiconductor Substrate
Application: 17/312,617 →
Publication: US 2022/0074071
Group Iii Nitride Laminate, Semiconductor Element, and Method for Producing Group Iii Nitride Laminate
Application: 17/369,807 →
Publication: US 2022/0028981
Method for Manufacturing Nitride-Based High Electron Mobility Transistor and Nitride-Based High Electron Mobility Transistor
Application: 17/375,947 →
Publication: US 2022/0037517
Nitride Semiconductor Substrate, Laminated Structure, and Method for Manufacturing Nitride Semiconductor Substrate
Application: 17/426,334 →
Publication: US 2022/0106706
Structure Manufacturing Method and Intermediate Structure
Application: 17/605,834 →
Publication: US 2022/0148883
Method for Manufacturing Structure
Application: 17/629,157 →
Publication: US 2022/0270887
Method for Manufacturing Structure, and Structure
Application: 17/630,413 →
Publication: US 2022/0285525
Method and Device for Manufacturing Structure
Application: 17/640,003 →
Publication: US 2022/0325431
Structure Production Wet Etch Method and Structure Production Apparatus
Application: 17/668,024 →
Publication: US 2022/0172943
Nitride Crystal, Semiconductor Laminate, and Method for Manufacturing Nitride Crystal
Application: 17/671,370 →
Publication: US 2022/0259765
Structure Manufacturing Method and Manufacturing Device, and Light Irradiation Device
Application: 17/725,232 →
Publication: US 2022/0246467
Nitride Semiconductor Substrate, Laminated Structure, and Method for Manufacturing Nitride Semiconductor Substrate
Application: 17/768,464 →
Publication: US 2024/0302302
Group Iii Nitride Semiconductor Device with Gate Recess and Related Method for Manufacturing
Application: 17/776,143 →
Publication: US 2022/0384614
Structure Manufacturing Method and Structure Manufacturing Apparatus
Application: 17/799,406 →
Publication: US 2023/0343597
Production Apparatus for Producing Structural Body and Production Method for Producing Structural Body
Application: 17/941,686 →
Publication: US 2023/0099777
Related Assignments (17)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Dec 3, 2019
From: HORIKIRI, FUMIMASA; YOSHIDA, TAKEHIRO
To: SCIOCS COMPANY LIMITED; SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 051166/0678 →
Assignment of Assignor's Interest Dec 11, 2019
From: HORIKIRI, FUMIMASA; YOSHIDA, TAKEHIRO; MISHIMA, TOMOYOSHI
To: SUMITOMO CHEMICAL COMPANY, LIMITED; SCIOCS COMPANY LIMITED; HOSEI UNIVERSITY
Reel/Frame 051250/0850 →
Assignment of Assignor's Interest Dec 11, 2019
From: FUJIKURA, HAJIME
To: SCIOCS COMPANY LIMITED; SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 051251/0640 →
Assignment of Assignor's Interest Apr 24, 2020
From: HORIKIRI, FUMIMASA; YOSHIDA, TAKEHIRO
To: SCIOCS COMPANY LIMITED; SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 052487/0386 →
Assignment of Assignor's Interest Jun 19, 2020
From: ISONO, RYOTA; TANAKA, TAKESHI
To: SCIOCS COMPANY LIMITED; SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 052988/0989 →
Assignment of Assignor's Interest Jun 19, 2020
From: TANAKA, TAKESHI; ISONO, RYOTA
To: SCIOCS COMPANY LIMITED; SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 052988/0796 →
Assignment of Assignor's Interest Nov 13, 2020
From: HORIKIRI, FUMIMASA
To: SCIOCS COMPANY LIMITED; SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 054367/0159 →
Assignment of Assignor's Interest Feb 26, 2021
From: YOSHIDA, TAKEHIRO
To: SCIOCS COMPANY LIMITED; SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 055433/0153 →
Assignment of Assignor's Interest Feb 26, 2021
From: YOSHIDA, TAKEHIRO
To: SCIOCS COMPANY LIMITED; SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 055433/0607 →
Assignment of Assignor's Interest Feb 26, 2021
From: YOSHIDA, TAKEHIRO
To: SCIOCS COMPANY LIMITED; SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 055431/0899 →
Assignment of Assignor's Interest Feb 26, 2021
From: HORIKIRI, FUMIMASA; NARITA, YOSHINOBU; SHIOJIMA, KENJI
To: SCIOCS COMPANY LIMITED; SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 055433/0359 →
Assignment of Assignor's Interest Apr 16, 2021
From: HIRIKIRI, FUMIMASA
To: SCIOCS COMPANY LIMITED; SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 055944/0494 →
Assignment of Assignor's Interest Apr 22, 2021
From: YOSHIDA, TAKEHIRO
To: SCIOCS COMPANY LIMITED; SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 056009/0097 →
Assignment of Assignor's Interest Apr 27, 2021
From: HORIKIRI, FUMIMASA; FUKUHARA, NOBORU; SATO, TAKETOMO; TOGUCHI, MASACHIKA
To: SCIOCS COMPANY LIMITED; SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 056059/0666 →
Assignment of Assignor's Interest May 11, 2021
From: YOSHIDA, TAKEHIRO
To: SCIOCS COMPANY LIMITED; SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 056192/0702 →
Assignment of Assignor's Interest Jun 4, 2021
From: SHIBATA, KENJI; WATANABE, KAZUTOSHI; HORIKIRI, FUMIMASA
To: SCIOCS COMPANY LIMITED; SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 056440/0044 →
Assignment of Assignor's Interest Jun 8, 2021
From: HORIKIRI, FUMIMASA; FUKUHARA, NOBORU
To: SCIOCS COMPANY LIMITED; SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 056474/0684 →