Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate, and laminate structure
A step of preparing a base substrate of a single crystal of a group III nitride semiconductor; a growth inhibition layer forming step of performing in situ formation of a growth inhibition layer over the entire main surface of the base substrate in a vapor phase growth apparatus; a first step of growing a first layer by epitaxially growing a single crystal of a group III nitride semiconductor on the main surface of the base substrate via openings in the growth inhibition layer by using the vapor phase growth apparatus where the base substrate on which the growth inhibition layer has been formed is placed in the vapor phase growth apparatus; and a second step of growing a second layer with a mirror surface by epitaxially growing a single crystal of a group III nitride semiconductor on the first layer so as to make the inclined interfaces disappear.
1. A nitride semiconductor substrate, having a diameter of 2 inches or more and including a main surface,
wherein at a center of the main surface, an off-angle formed by a <0001> axis with respect to a normal of the center of the main surface is greater than 0° and 1° or less, and when an X-ray rocking curve of (0002) plane diffraction is measured by irradiating the main surface with Cu Kα1 X-rays via a two-crystal monochromator of a Ge (220) plane and a slit,
FWHMb is 38.5 arcsec or less,
difference FWHMa-FWHMb obtained by subtracting FWHMb from FWHMa is 30% or less of FWHMa, and
FWHMa≥FWHMb,
wherein FWHMa is full width at half maximum of the (0002) plane diffraction when a slit width in ω direction is 1 mm,
FWHMb is full width at half maximum of the (0002) plane diffraction when a slit width in the ω direction is 0.1 mm, and
the ω direction is a circumferential direction around a central axis that passes through a center of the nitride semiconductor substrate, is parallel to the main surface of the nitride semiconductor substrate, and is perpendicular to a direction in which the X-rays are incident on the center of the nitride semiconductor substrate, in the X-ray rocking curve measurement.
2. The nitride semiconductor substrate according to claim 1 ,
wherein, when the X-ray rocking curve of (0002) plane diffraction is measured at a plurality of measurement points set at 5 mm intervals in the main surface, by setting the width of the slit in the ω direction to 0.1 mm, the full width at half maximum FWHMb of the (0002) plane diffraction is 38.5 arcsec or less at 90% or more of all the measurement points.
3. The nitride semiconductor substrate according to claim 1 ,
wherein, when a dislocation density is determined from a dark spot density by observing the main surface using a multiphoton excitation microscope in a field of view of 250 μm square, the main surface does not include a region that has a dislocation density higher than 3×10 6 cm −2 , and regions having a dislocation density lower than 1×10 6 cm −2 constitute 70% or more of the main surface.
4. The nitride semiconductor substrate according to claim 1 ,
wherein the main surface includes dislocation-free regions of 25 μm square that do not overlap each other at a density of 100 regions/cm 2 or more.
5. The nitride semiconductor substrate according to claim 1 ,
wherein the oxygen concentration is 5×10 16 cm −3 or less.