Gallium nitride-based sintered compact and method for manufacturing same
A sputtering target for a gallium nitride thin film, which has a low oxygen content, a high density and a low resistivity. A gallium nitride powder having powder physical properties of a low oxygen content and a high bulk density is used and hot pressing is conducted at high temperature in high vacuum to prepare a gallium nitride sintered body having a low oxygen content, a high density and a low resistivity.
1. A gallium nitride-based film having an intensity ratio of (002) plane to (101) plane in 2θ/θ measurement by an X-ray diffraction apparatus, I(002)/I(101), of at least 150 and a minimum oxygen content of 5×10 21 atm/cm 3 or less, wherein a surface roughness Ra of the gallium nitride-based film is 10 nm or less.
2. The gallium nitride-based film according to claim 1 having a half value width of the co measurement peak of (002) plane of 2° or less.
3. The gallium nitride-based film according to claim 1 , having a half value width of the 2θ/θ measurement peak of (002) plane of 0.3° or less.
4. The gallium nitride-based film according to claim 1 , having a hexagonal crystal phase.
5. A laminated substrate, comprising:
a substrate;
a metal sulfide layer,
wherein the substrate comprises a silicon single crystal layer,
the metal sulfide layer is present between the silicon single crystal layer and the gallium nitride based film, and
a surface roughness Ra of the gallium nitride based film is at most 10 nm,
and
the gallium nitride-based film of claim 1 .
6. The laminated substrate according to claim 5 , wherein the metal sulfide layer is laminated on the silicon single crystal layer.
7. The laminated substrate according to claim 5 , wherein the metal sulfide layer comprises a manganese sulfide layer.
8. The laminated substrate according to claim 5 , wherein the silicon single crystal layer comprises a Si(100) substrate.
9. A method for producing the gallium nitride-based film of claim 1 , comprising:
forming the gallium nitride-based film by sputtering under a sputtering gas pressure of less than 0.3 Pa.
10. The method according to claim 9 , further comprising, before the forming:
setting a degree of vacuum in a film forming apparatus to be at most 3×10 −5 Pa.
11. The method according to claim 9 , wherein the forming includes heating a substrate at a heating temperature of 100° C.-800° C.
12. A semiconductor device, comprising:
the laminated substrate of claim 5 .
13. An electronic equipment, comprising:
the laminated substrate of claim 5 .