Granted Patent B2

US 12,283,487 · App. 17/629,157 · Granted Apr 22, 2025

Inventors: Fumimasa Horikiri (Hitachi, JP); Noboru Fukuhara (Hitachi, JP)

Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED

H01L21/30635H01L21/30612

Abstract

Claims (32)

1. A method for manufacturing a structure, comprising:

applying a first etching to a surface of a member, at least the surface being composed of Group III nitride; and

applying a second etching to the surface to which the first etching has been applied,

wherein in applying the first etching, a flat portion and a protruding portion are formed, the flat portion being newly appeared on the surface by etching, and the protruding portion being raised with respect to the flat portion, which is caused by being less likely to be etched than the flat portion, and

in applying the second etching, the protruding portion is lowered by etching the protruding portion, and

wherein the first etching is photoelectrochemical etching, the second etching is not photoelectrochemical etching, and the surface is not irradiated with ultraviolet light in the second etching.

2. The method for manufacturing a structure according to claim 1 , wherein the protruding portion is formed at a position corresponding to a dislocation of the Group III nitride constituting the member.

3. The method for manufacturing a structure according to claim 1 , wherein the surface is composed of a c-plane of the Group III nitride, and the Group III nitride is etched from a direction perpendicular to the surface in the first etching, and the protruding portion is etched from a direction that is not perpendicular to the c-plane in the second etching.

4. The method for manufacturing a structure according to claim 1 , wherein the second etching is wet etching using an acidic or alkaline etching solution.

5. The method for manufacturing a structure according to claim 1 , wherein the first etching is photoelectrochemical etching in which by irradiating the surface with ultraviolet light from above, the Group III nitride is etched from a direction perpendicular to the surface.

6. The method for manufacturing a structure according to claim 1 , wherein the protruding portion is selectively etched with respect to the flat portion in the second etching.

7. The method for manufacturing a structure according to claim 1 , wherein an etching solution for the photoelectrochemical etching is an alkaline or acidic etching solution containing an oxidizing agent that receives electrons.

8. The method for manufacturing a structure according to claim 1 ,

wherein

in the first etching, a distance from the surface to an upper surface of an etching solution for the photoelectrochemical etching is 1 mm or more and 100 mm or less.

9. The method for manufacturing a structure according to claim 1 ,

wherein

the photoelectrochemical etching is performed in the first etching, with a mask placed on the surface,

an etching solution for the photoelectrochemical etching is an acidic etching solution, and

the mask is a resist mask.

10. The method for manufacturing a structure according to claim 1 ,

wherein

the photoelectrochemical etching is performed with a mask and a conductive member placed on the surface,

the mask is made of a non-conductive material,

the conductive member is provided so as to be in contact with at least a part of a surface of a conductive region of the member, which is electrically connected to a region to be subjected to the photoelectrochemical etching, and

at least a part of the conductive member is provided so as to be in contact with an etching solution for the photoelectrochemical etching.

11. The method for manufacturing a structure according to claim 1 , wherein the first etching and the second etching are alternately repeated.

12. The method for manufacturing a structure according to claim 1 , wherein the second etching is performed while generating a flow in an etching solution used for the second etching.

13. The method for manufacturing a structure according to claim 1 , wherein the second etching is performed while applying vibration to an etching solution used for the second etching.

14. The method for manufacturing a structure according to claim 1 , wherein the Group III nitride is etched from a direction perpendicular to the surface in the first etching, and the protruding portion is mechanically removed in the second etching.

15. The method for manufacturing a structure according to claim 14 , wherein the second etching is bubbling cleaning.

16. The method for manufacturing a structure according to claim 14 , wherein the second etching is scrubbing.

Assignments (2)

Priority Claims (1)

Continuity (1)

References Cited (22)