Method for manufacturing a semiconductor device and optoelectronic device
In an embodiment a method for manufacturing a semiconductor device include providing a growth substrate, depositing an n-doped first layer, depositing an active region on the n-doped first layer, depositing a second layer onto the active region, depositing magnesium (Mg) in the second layer and subsequently to depositing Mg, depositing zinc (Zn) in the second layer such that a concentration of Zn in the second layer decreases from a first value to a second value in a first area of the second layer adjacent to the active region, the first area being in a range of 5 nm to 200 nm.
1. A method for manufacturing a semiconductor device, the method comprising:
providing a growth substrate;
depositing an n-doped first layer;
depositing an active region on the n-doped first layer;
depositing a p-doped second layer on the active region, wherein a p-doped material comprises magnesium (Mg); and
depositing zinc (Zn) on a surface of the p-doped second layer such that Zn partly or fully replaces Mg atoms in the second layer and such that a concentration of Zn in the second layer decreases from a first value to a second value in a first area of the second layer adjacent to the active region, the first area being in a range of 5 nm to 200 nm.
2. The method according to claim 1 , wherein, after diffusion of Zn through the second layer, the concentration of Zn in a second area adjacent to the first area is larger than a respective concentration of Mg in the second area.
3. The method according to claim 1 , wherein the first value is 5 to 500 times larger than the second value.
4. The method according to claim 1 , wherein the second value is substantially equal to a concentration of Mg in the first area.
5. The method according to claim 1 , wherein the second layer comprises a thickness of 300 nm to 5 μm.
6. The method according to claim 1 , wherein a deposition of Mg comprises adjusting diffusion parameters causing a diffusion length of Mg to be substantially shorter than a distance from a surface of the second layer to the first area or the active region.
7. The method according to claim 1 , wherein depositing Zn comprises at least one of:
adjusting a temperature, the temperature being different from a temperature while depositing Mg; or
adjusting a diffusion time, the diffusion time being different from a diffusion time while depositing Mg.
8. The method according to claim 1 , wherein a deposition of Mg or a depositing Zn comprises providing a photomask mask onto the second layer.
9. The method according to claim 1 , wherein depositing the second layer comprises:
depositing a third semiconductor layer having aluminium (Al), wherein a concentration of Al varies with increasing distance to the active region; and
depositing a second semiconductor layer onto the third semiconductor layer.
10. The method according to claim 1 , wherein depositing the active region comprises depositing layers having different material compositions as to form one or more quantum well structures.
11. The method according to claim 1 , wherein the first layer and the second layer comprise InGaAlP or InAlP.
12. The method according to claim 1 , wherein the first area is less than 50 nm.
13. The method according to claim 1 , wherein the second layer comprises a thickness of larger than 500 nm.