Memory and apparatus comprising same
View Patent ↗A memory is included in a combined processing apparatus which may include a computing device, a general interconnection interface, and another processing device. The computing device interacts with the other processing device to jointly complete a computing operation specified by a user. A storage device is respectively connected to the computing device and the other processing device, and is configured to store data of the computing device and the other processing device. The solution of the present disclosure can be widely applied to various data storage fields.
1. A memory, comprising:
two dies (D1, D2) with respective on-die terminations (ODT1, ODT2), and a communication path provided between the two dies (D1, D2);
wherein one of the two dies is a target die (T-D), and the on-die termination (ODT1, ODT2) of the target die (T-D) is a target on-die termination (T-ODT); the other is a non-target die (NT-D), and the on-die termination (OTD2, ODT1) of the non-target die (NT-D) are a non-target on-die termination (NT-ODT); and an operation mode of the target die (T-D) includes a read mode and a write mode; and
the target die (T-D) sends a notification signal to the non-target die (NT-D) through the communication path to notify the non-target die (NT-D) of the operation mode of the target die (T-D), wherein the non-target die (NT-D) is configured to, in response to receiving the notification signal from the target die (T-D) and depending on different operation modes of the target die (T-D), set the non-target on-die termination (NT-ODT) to different resistance values;
wherein the notification signal is a step signal including a front step edge and a back step edge, the step signal is sent in the read mode, in which the front step edge of the step signal occurs before the start of data transmission in the read mode of the target die (T-D), and the back step edge occurs after the end of data transmission in the read mode of the target die (T-D).
2. The memory of claim 1 , wherein a resistance value of the target on-die termination (T-ODT) is set to be no less than a resistance value of the non-target on-die termination (NT-ODT); and
the target on-die termination (T-ODT) is set to OFF.
3. The memory of claim 1 , wherein the resistance value of the non-target on-die termination (NT-ODT) is set to be no less than 60 ohms in the read mode;
the non-target on-die termination (NT-ODT) is set to OFF in the read mode;
the resistance value of the non-target on-die termination (NT-ODT) is set to be no greater than 120 ohms in the write mode; and
the resistance value of the non-target on-die termination (NT-ODT) is set to be any value of 240/N ohms, where N is any integer from 2 to 10.
4. The memory of claim 1 , further comprising:
a mode register (MR) in which a parameter list is stored, so that the memory is able to set at least the two dies (D1, D2) according to the parameter list;
a memory controller that is connected to the two dies (D1, D2) and configured to control the resistance value of the target on-die termination (T-ODT) in the target die (T-D), and further configured to control the resistance value of the non-target on-die termination (NT-ODT) in the non-target die (NT-D).
5. A processor system, comprising:
a processor chip; and
the memory of claim 1 , in which the processor chip is connected to the dies (D1, D2),
wherein depending on different operation modes of the target die (T-D), the processor chip sets resistance values of the target on-die termination (T-ODT) and the non-target on-die termination (NT-ODT), and/or an on-die termination of the processor chip; and
the processor chip includes a CPU chip, a GPU chip, or an SoC chip.
6. The processor system of claim 5 , wherein the on-die termination of the processor chip is set to be no greater than 120 ohms in a read mode;
the resistance value of the non-target on-die termination (NT-ODT) is set to 240/N, where N is an integer between 2 and 10; and
an on-die termination of the processor system is set to OFF in a write mode.
7. A storage method performed on a memory, wherein the memory comprises two dies (D1, D2) with respective on-die terminations (ODT1, ODT2), and a communication path is provided between the two dies (D1, D2); wherein one of the two dies is a target die (T-D), and the on-die termination (ODT1, ODT2) of the target die (T-D) is a target on-die termination (T-ODT); the other is a non-target die (NT-D), and the on-die termination (OTD2, ODT1) of the non-target die (NT-D) are a non-target on-die termination (NT-ODT); and an operation mode of the target die (T-D) includes a read mode and a write mode; and
the method comprises:
sending a notification signal to the non-target die (NT-D) through the communication path to notify the non-target die (NT-D) of the operation mode of the target die (T-D),
wherein in response to receiving the notification signal from the target die (T-D) and depending on different operation modes of the target die (T-D), the non-target die (NT-D) sets the non-target on-die termination (NT-ODT) to different resistance values;
wherein the notification signal is a step signal including a front step edge and a back step edge, the step signal is sent in the read mode, in which the front step edge of the step signal occurs before the start of data transmission in the read mode of the target die (T-D), and the back step edge occurs after the end of data transmission in the read mode of the target die (T-D).
8. The storage method of claim 7 , wherein a resistance value of the target on-die termination (T-ODT) is set to be no less than a resistance value of the non-target on-die termination (NT-ODT); and
the target on-die termination (T-ODT) is set to OFF.
9. The storage method of claim 7 , wherein the resistance value of the non-target on-die termination (NT-ODT) is set to be no less than 60 ohms in the read mode; and
the non-target on-die termination (NT-ODT) is set to OFF in the read mode;
the resistance value of the non-target on-die termination (NT-ODT) is set to be no greater than 120 ohms in the write mode; and
the resistance value of the non-target on-die termination (NT-ODT) is set to be any value of 240/N ohms, where N is any integer from 2 to 10.
10. The storage method of claim 7 , wherein the memory further includes a mode register (MR) in which a parameter list is stored so that at least the two dies (D1, D2) are set according to the parameter list;
the storage method further comprises:
controlling, by a memory controller connected to the two dies (D1, D2), the resistance value of the target on-die termination (T-ODT) in the target die (T-D); and
controlling, by the controller, the resistance value of the non-target on-die termination (NT-ODT) in the non-target die (NT-D).