Display device using micro LED and method for manufacturing same
The present specification provides a new type of a display device in which a wiring process is easily performed after a semiconductor light emitting element having a vertical structure is assembled on a substrate. Here, a semiconductor light emitting device according to an embodiment of the present invention is characterized by comprising: a substrate; a wiring electrode positioned on the substrate; a dielectric film positioned on the wiring electrode; an assembly electrode positioned on the dielectric film; an assembly insulating film positioned on the assembly electrode; a partition wall positioned on the assembly insulting film and defining an assembly groove to which a semiconductor light emitting element is assembled; and the semiconductor light emitting element which is assembled to the assembly groove and provided with conductive electrodes on both ends thereof, wherein the wiring electrode is provided with a protrusion portion, and the protrusion portion protrudes toward the assembly groove and is electrically connected to the conductive electrode on one end of the semiconductor light emitting element.
1. A display device comprising:
a substrate;
a wiring electrode located on the substrate;
a dielectric film located on the wiring electrode;
assembly electrodes located on the dielectric film;
an assembly insulating film located on the assembly electrodes;
partition walls located on the assembly insulating film so as to define an assembly recess therebetween, wherein the assembly recess is configured to accommodate a semiconductor light emitting element assembled therein; and
the semiconductor light emitting element provided with conductivity-type electrodes formed at both ends thereof,
wherein the wiring electrode comprises a protrusion which protrudes towards the assembly recess and is electrically connected to one of the conductivity-type electrodes of the semiconductor light emitting element.
2. The display device of claim 1 , wherein the wiring electrode comprises a depressed portion formed opposite the protrusion.
3. The display device of claim 2 , wherein:
the assembly electrodes are provided in a pair and a position of each assembly electrode overlaps with a position of a corresponding partition wall; and
a position of the wiring electrode corresponds to a center of the assembly recess.
4. The display device of claim 3 , wherein the wiring electrode and the assembly electrodes are elongated and formed parallel to each other.
5. The display device of claim 4 , further comprising stepped parts located under the assembly recess, wherein the semiconductor light emitting element is positioned on top of the stepped parts.
6. The display device of claim 5 , wherein the stepped parts are formed by etching a portion of the dielectric film and the assembly insulating film exposed between the partition walls.
7. The display device of claim 6 , wherein the protrusion of the wiring electrode is formed in a space defined between the stepped parts.
8. The display device of claim 1 , wherein a surface of the conductivity-type electrode of the semiconductor light emitting element connected to the protrusion of the wiring electrode is provided with an uneven structure.
9. The display device of claim 1 , wherein the semiconductor light emitting element is provided with a magnetic layer.
10. The display device of claim 1 , wherein the semiconductor light emitting element is a micro-LED having a size measured in micrometers.
11. A method for manufacturing a display device, the method comprising:
forming a semiconductor light emitting element provided with a magnetic layer;
preparing an assembly substrate comprising a wiring electrode, assembly electrodes, and an assembly recess;
placing the semiconductor light emitting element into a chamber filled with a fluid;
positioning the assembly substrate at an upper region of the chamber, and causing the semiconductor light emitting element to be assembled within the assembly recess of the assembly substrate using a magnetic field and an electric field;
radiating a laser to affect a region of the wiring electrode of the assembly substrate; and
electrically connecting the affected region of the wiring electrode to the semiconductor light emitting element.
12. The method of claim 11 , wherein preparing the assembly substrate comprises:
forming the wiring electrode on the assembly substrate;
forming a dielectric film configured to surround the wiring electrode;
forming the assembly electrodes on the dielectric film;
forming an assembly insulating film configured to surround the assembly electrodes; and
forming partition walls on the assembly insulating film so as to define the assembly recess therebetween.
13. The method of claim 12 , wherein preparing the assembly substrate further comprises forming stepped parts under the assembly recess by etching a portion of the assembly insulating film and the dielectric film exposed between the partition walls.
14. The method of claim 13 , wherein the semiconductor light emitting element is assembled within the assembly recess by being disposed on top of the stepped parts.
15. The method of claim 11 , wherein:
the assembly substrate is formed of a material configured to transmit the laser; and
the laser is radiated through a rear surface of the assembly substrate toward the region of the wiring electrode which corresponds to a position of the assembly recess.
16. The method of claim 11 , wherein the semiconductor light emitting element has a vertical semiconductor light emitting structure and is provided with conductivity-type electrodes provided at both ends thereof,
wherein an uneven structure is provided on a surface of at least one of the conductivity-type electrodes provided at both ends of the vertical semiconductor light emitting structure.