Micromechanical component for a pressure and inertial sensor device

1. A micromechanical component for a pressure and inertial sensor device, comprising:

a substrate having an upper substrate surface;

a stretched-out diaphragm having an inner diaphragm side oriented towards the upper substrate surface and an outer diaphragm side pointing away from the upper substrate surface, the inner diaphragm side bordering on an inner volume, in which a reference pressure is enclosed, and the diaphragm being configured to be warped using a pressure difference between a pressure prevailing on the outer diaphragm side and the reference pressure;

a seismic mass situated in the inner volume; and

a sensor electrode, which projects out on the inner diaphragm side, extends into the seismic mass, and is displaceable with respect to the substrate via warping of the diaphragm;

wherein the seismic mass is made of at least one semiconductor material of a semiconductor material layer or of a semiconductor material layer stack and includes a rocker-arm structure that is settable into a rocking motion about an axis of tilt oriented parallel to the upper substrate surface;

wherein the sensor electrode is made at least partially of the at least one semiconductor material of the semiconductor material layer or of the semiconductor material layer stack; and

wherein the diaphragm is stretched out on a frame structure, and the frame structure is made at least partially of the at least one semiconductor material of the semiconductor material layer or of the semiconductor material layer stack.

2. The micromechanical component as recited in claim 1 , wherein a reference electrode is situated in the inner volume, is formed independently of the seismic mass, and is also made of the at least one semiconductor material of the semiconductor material layer or semiconductor material layer stack.

3. The micromechanical component as recited in claim 1 , wherein a first grounding counter-electrode and a second grounding counter-electrode are attached directly or indirectly to the upper substrate surface in such a manner, that when the rocker-arm structure of the seismic mass is set into a rocking motion about the axis of tilt, a first distance of the rocker-arm structure from the first grounding counter-electrode and a second distance of the rocker-arm structure from the second grounding counter-electrode, vary.

4. The micromechanical component as recited in claim 3 , wherein at least one reference counter-electrode is attached directly or indirectly to the upper substrate surface, between the first grounding counter-electrode and the second grounding counter-electrode.

5. A pressure and inertial sensor device, comprising:

a micromechanical component including:

a substrate having an upper substrate surface;

a stretched-out diaphragm having an inner diaphragm side oriented towards the upper substrate surface and an outer diaphragm side pointing away from the upper substrate surface, the inner diaphragm side bordering on an inner volume, in which a reference pressure is enclosed, and the diaphragm being configured to be warped using a pressure difference between a pressure prevailing on the outer diaphragm side and the reference pressure;

a seismic mass situated in the inner volume; and

a sensor electrode, which projects out on the inner diaphragm side, extends into the seismic mass, and is displaceable with respect to the substrate via warping of the diaphragm;

wherein the seismic mass is made of at least one semiconductor material of a semiconductor material layer or of a semiconductor material layer stack and includes a rocker-arm structure that is settable into a rocking motion about an axis of tilt oriented parallel to the upper substrate surface;

wherein the sensor electrode is made at least partially of the at least one semiconductor material of the semiconductor material layer or of the semiconductor material layer stack; and

wherein the diaphragm is stretched out on a frame structure, and the frame structure is made at least partially of the at least one semiconductor material of the semiconductor material layer or of the semiconductor material layer stack.

6. A method of manufacturing a micromechanical component for a pressure and inertial sensor device, the method comprising the following steps:

positioning a seismic mass;

stretching out a diaphragm on a frame structure in such a manner on a substrate having an upper substrate surface, that an inner diaphragm side of the stretched-out diaphragm is oriented towards the upper substrate surface, an outer diaphragm side of the stretched-out diaphragm is pointed away from the upper substrate surface, and the inner diaphragm side borders on an inner volume in which the seismic mass is positioned due to the positioning step; and

enclosing a reference pressure in the inner volume in such a manner that the diaphragm is warped in response to a pressure difference between a pressure prevailing on the outer diaphragm side and the reference pressure;

wherein:

the diaphragm, which has a sensor electrode that projects out on the inner diaphragm side and extends into the seismic mass, is formed in such a manner, that the sensor electrode is displaceable with respect to the substrate in response to warping of the diaphragm;

the seismic mass is made of at least one semiconductor material of a semiconductor material layer or of a semiconductor material layer stack and includes a rocker-arm structure that is settable into a rocking motion about an axis of tilt oriented parallel to the upper substrate surface;

the sensor electrode is made at least partially of the at least one semiconductor material of the semiconductor material layer or of the semiconductor material layer stack; and

the frame structure is made at least partially of the at least one semiconductor material of the semiconductor material layer or of the semiconductor material layer stack.

7. The manufacturing method as recited in claim 6 , wherein prior to the stretching-out of the diaphragm, the upper substrate surface and/or at least one intermediate layer, which covers the upper substrate surface at least partially, is covered at least partially by the semiconductor material layer or the semiconductor material layer stack.