High efficiency electro-optic modulator
A method includes receiving light at a light input of an electro-optic modulator device. The method includes directing the light via the light input into optical waveguides in an optical layer of an electro-optic modulator of the electro-optic modulator device. The method includes receiving a signal at an electric input of the electro-optic modulator device. The electric input is associated with an input impedance. The method includes providing the signal to an electrode structure of the electro-optic modulator. The electrode structure generates an electrical field based on the signal. The electric field modulates light in the optical waveguides to produce modulated light based on the signal. The electrode structure includes a constant impedance section associated with a second impedance less than the input impedance. The method also includes providing the modulated light based on the signal from the optical layer to one or more output optic fibers.
1 . An electro-optic modulator device comprising:
an optical layer, wherein the optical layer includes optical waveguides; and
an electrode structure coupled to the optical layer, wherein the electrode structure includes a signal electrode disposed between a pair of ground electrodes, wherein the electrode structure is configured to generate an electric field based on a signal carried by the signal electrode, wherein the electric field is configured to modulate light in the optical waveguides to produce modulated light based on the signal, and wherein the electrode structure comprises:
an impedance transition section configured to reduce an impedance associated with the electrode structure from a first impedance at an input of the impedance transition section to a second impedance at an output of the impedance transition section; and
a constant impedance section associated with the second impedance, wherein a length of the impedance transition section is smaller than a length of the constant impedance section.
2 . The electro-optic modulator device of claim 1 , further comprising an electric input configured to receive the signal, wherein the electric input is associated with an input impedance.
3 . The electro-optic modulator device of claim 2 , wherein the signal comprises a radio frequency (RF) signal.
4 . The electro-optic modulator device of claim 2 , further comprising an impedance transition circuit coupled to the electric input and to the impedance transition section, wherein an input of the impedance transition circuit is associated with the input impedance, wherein an output of the impedance transition circuit is associated with the first impedance, and wherein the first impedance is less than the input impedance.
5 . The electro-optic modulator device of claim 1 , further comprising a termination circuit coupled to an end of the signal electrode.
6 . The electro-optic modulator device of claim 1 , further comprising a light input configured to facilitate transfer of the light from an input optic fiber to the optical waveguides of the optical layer.
7 . The electro-optic modulator device of claim 1 , further comprising:
a modulated light output configured to facilitate transfer of modulated light based on the signal from the optical layer; and
one or more output optic fibers coupled to the modulated light output.
8 . The electro-optic modulator device of claim 1 , further comprising a quartz substrate coupled to the optical layer.
9 . The electro-optic modulator device of claim 1 , wherein a thickness of the optical layer is between 5 microns and 10 microns.
10 . The electro-optic modulator device of claim 1 , wherein the signal electrode is coupled to a portion of the optical layer between the optical waveguides, wherein gaps are located between the signal electrode and the ground electrodes, and wherein the optical waveguides are located in the optical layer between the gaps.
11 . The electro-optic modulator device of claim 10 , wherein widths of the gaps gradually decrease in the impedance transition section.
12 . An electro-optic modulator device comprising:
an electric input configured to receive a signal, wherein the electric input is associated with an input impedance;
an optical layer, wherein the optical layer includes optical waveguides; and
an electrode structure coupled to the optical layer, wherein the electrode structure comprises a signal electrode disposed between ground electrodes, wherein the signal electrode is configured to carry the signal, wherein the electrode structure is configured to generate an electric field based on the signal, wherein the electric field is configured to modulate light passing through the optical waveguides to produce modulated light based on the signal, wherein the electrode structure comprises an impedance transition section, wherein an input of the impedance transition section is associated with the input impedance, wherein an output of the impedance transition section is associated with a second impedance that is less than the input impedance, wherein the electrode structure includes a constant impedance section associated with the second impedance, and wherein a length of the impedance transition section is smaller than a length of the constant impedance section.
13 . The electro-optic modulator device of claim 12 , further comprising an impedance transition circuit coupled to the electric input, wherein an input of the impedance transition circuit is associated with the input impedance, and wherein an output of the impedance transition circuit is associated with a first impedance that is less than the input impedance.
14 . The electro-optic modulator device of claim 13 , wherein a number of the optical waveguides is two.
15 . The electro-optic modulator device of claim 14 , wherein a width of the signal electrode in the impedance transition section is a constant width, and wherein the constant width is a value between 80 microns and 300 microns.
16 . The electro-optic modulator device of claim 12 , further comprising a termination circuit coupled to an end of the signal electrode.
17 . The electro-optic modulator device of claim 12 , further comprising a light input configured to facilitate transition of the light from an input optic fiber to the optical waveguides of the optical layer.
18 . The electro-optic modulator device of claim 12 , further comprising a modulated light output configured to facilitate transition of the modulated light based on the signal from the optical layer to one or more output optic fibers.
19 . The electro-optic modulator device of claim 12 , further comprising a quartz substrate coupled to the optical layer.
20 . The electro-optic modulator device of claim 12 , wherein a width of the signal electrode in the constant impedance section is a constant width, and wherein the constant width is a value between 80 microns and 300 microns.
21 . The electro-optic modulator device of claim 12 , wherein the optical layer comprises one of lithium niobate, barium titanate, potassium titanyl phosphate, potassium niobate, a lead lanthanum zirconium titanate type material, a barium strontium titanate type material, or an organic crystal.
22 . An electro-optic modulator device comprising:
a quartz substrate;
a lithium niobate layer coupled to the quartz substrate, wherein the lithium niobate layer comprises a plurality of optical waveguides, and wherein a crystallographic axis of the quartz substrate is aligned with a crystallographic axis of the lithium niobate layer; and
an electrode structure coupled to the lithium niobate layer, wherein the electrode structure comprises a signal electrode configured to carry a signal and ground electrodes, wherein the electrode structure is positioned in working relation to optical waveguides in a first section of the lithium niobate layer, wherein the electrode structure is configured to generate an electric field based on the signal between the signal electrode and the ground electrodes, wherein the electric field is configured to modulate light in the plurality of optical waveguides to produce modulated light based on the signal, wherein the electrode structure comprises an impedance transition section configured to adjust an impedance associated with the electrode structure, and wherein the electrode structure includes a constant impedance section coupled to the impedance transition section.
23 . The electro-optic modulator device of claim 22 , wherein an impedance associated with an input of the impedance transition section is a first impedance, and wherein an output of the impedance transition section and the constant impedance section are associated with a second impedance that is less than the first impedance, and wherein a length of the impedance transition section is smaller than a length of the constant impedance section.
24 . The electro-optic modulator device of claim 22 , wherein a thickness of the lithium niobate layer is equal to or greater than a diameter of a core of an input optic fiber that provides the light to the lithium niobate layer, and further comprising:
a modulated light output configured to facilitate transfer of modulated light based on the signal from the lithium niobate layer; and
one or more output optic fibers coupled to the modulated light output.
25 . The electro-optic modulator device of claim 22 , wherein an impedance associated with an input of the impedance transition section is a first impedance, and wherein an output of the impedance transition section and the constant impedance section are associated with a second impedance that is less than the first impedance.
26 . An electro-optic modulator device comprising:
an electric input configured to receive a signal, wherein the electric input is associated with an input impedance;
an impedance transition circuit coupled to the electric input, wherein an input of the impedance transition circuit is associated with the input impedance and an output of the impedance transition circuit is associated with a first impedance less than the input impedance;
a light input configured to receive light;
an electro-optic modulator, wherein the electro-optic modulator comprises an optical layer coupled to the light input and configured to direct the light into optical waveguides in the optical layer and an electrode structure coupled to the impedance transition circuit, wherein the electrode structure is configured to generate an electrical field based on the signal that modulates the light in the optical waveguides to produce modulated light;
a modulated light output configured to direct the modulated light from the optical layer to one or more output optic fibers; and
a phase shifter coupled to a second electro-optic modulator device, wherein the phase shifter is configured to receive the light, wherein the second electro-optic modulator device includes a second electric input configured to receive a second signal, a second light input configured to receive output light from the phase shifter, and a second electro-optic modulator, and wherein the modulated light from the optical layer is configured to be combined with second modulated light from the second electro-optic modulator and directed to the one or more output optic fibers.
27 . The electro-optic modulator device of claim 26 , wherein the electrode structure includes a signal electrode disposed between ground electrodes.
28 . The electro-optic modulator device of claim 26 , wherein the electrode structure includes an impedance transition section and a constant impedance section, wherein an input of the impedance transition section is associated with the first impedance, and wherein an output of the impedance transition section and the constant impedance section are associated with a second impedance less than the first impedance.
29 . The electro-optic modulator device of claim 28 , wherein gaps between a signal electrode and ground electrodes of the electrode structure at the input of the impedance transition section have a first width, wherein the gaps at the output of the impedance transition section have a second width smaller than the first width, and wherein the gaps gradually reduce from the first width to the second width along a length of the impedance transition section.
30 . The electro-optic modulator device of claim 28 , wherein a length of the impedance transition section is smaller than a length of the constant impedance section.
31 . The electro-optic modulator device of claim 26 , further comprising a quartz substrate coupled to the optical layer.
32 . A method comprising:
receiving light at a light input of an electro-optic modulator device;
directing the light via the light input into optical waveguides in an optical layer of an electro-optic modulator of the electro-optic modulator device;
receiving a signal at an electric input of the electro-optic modulator device, wherein the electric input is associated with an input impedance;
providing the signal to an electrode structure of the electro-optic modulator, wherein the electrode structure generates an electrical field based on the signal, wherein the electric field modulates light in the optical waveguides to produce modulated light based on the signal, wherein the electrode structure includes an impedance transition section having a first length, and wherein the electrode structure includes a constant impedance section that is associated with a second impedance less than the input impedance and that has a second length that is smaller than the first length;
adjusting, using the impedance transition section, the input impedance to reduce the input impedance to the second impedance; and
providing the modulated light based on the signal from the optical layer to one or more output optic fibers.
33 . The method of claim 32 , further comprising providing the signal from the electric input to an impedance transition circuit, wherein an input of the impedance transition circuit is associated with the input impedance, and wherein an output of the impedance transition circuit is associated with a first impedance less than the input impedance.
34 . The method of claim 33 , wherein the optical layer is coupled to a quartz substrate, and wherein the first impedance is the second impedance.
35 . The method of claim 33 , further comprising providing the signal from the impedance transition circuit to a signal electrode of the impedance transition section of the electrode structure, wherein an input of the impedance transition section is associated with the first impedance, and wherein an output of the impedance transition section is associated with the second impedance.
36 . The method of claim 33 , further comprising providing the signal from an end of a signal electrode of the electrode structure to a termination circuit.