SiC growth apparatus comprised of a base having a plurality of graphite plates having anisotropy of a thermal expansion coefficient and method of manufacturing a SiC crystal using the apparatus

1. A silicon carbide single crystal manufacturing apparatus, comprising:

a crucible constituted by a crucible body and a crucible lid; and

a base that is placed on the underside of the crucible lid and holds a silicon carbide seed crystal,

wherein the base has a structure in which a plurality of graphite plates having anisotropy of a thermal expansion coefficient are laminated and bonded, and

when viewed in a plan view from the lamination direction, in the plurality of graphite plates, the maximum directional axes of the thermal expansion coefficient between adjacent graphite plates are orthogonal to each other or the maximum directional axes intersect within an angle range of ±15° from orthogonal,

wherein the total thickness of the plurality of graphite plates is 20 mm or more and 100 mm or less.

2. The silicon carbide single crystal manufacturing apparatus according to claim 1 ,

wherein the anisotropy of the thermal expansion coefficient is 1.02 or more and 1.20 or less.

3. The silicon carbide single crystal manufacturing apparatus according to claim 1 ,

wherein the plurality of graphite plates are 2 to 8 plates.

4. The silicon carbide single crystal manufacturing apparatus according to claim 1 ,

wherein the thickness of each graphite plate constituting the base is 5 mm or more and 20 mm or less.

5. The silicon carbide single crystal manufacturing apparatus according to claim 1 ,

wherein the thickness of each graphite plate constituting the base is the same.

6. A method of manufacturing a silicon carbide single crystal in which a silicon carbide seed crystal and a silicon carbide raw material are placed in a crucible and a sublimation gas sublimated from the silicon carbide raw material is precipitated on the silicon carbide seed crystal to grow the silicon carbide single crystal, using the crucible constituted by a crucible body and a crucible lid, and a base that is placed on the underside of the crucible lid and holds the silicon carbide seed crystal,

wherein the base has a structure in which a plurality of graphite plates having anisotropy of the thermal expansion coefficient are laminated and bonded, and

when viewed in a plan view from the lamination direction, in the plurality of graphite plates, the maximum directional axes of the thermal expansion coefficient between adjacent graphite plates are orthogonal to each other or the maximum directional axes intersect within an angle range of ±15° from orthogonal,

wherein the total thickness of the plurality of graphite plates is 20 mm or more and 100 mm or less.

7. The method of manufacturing the silicon carbide single crystal according to claim 6 ,

wherein a stress buffering member is arranged between the silicon carbide seed crystal and the base.

8. The method of manufacturing the silicon carbide single crystal according to claim 6 ,

wherein the outer diameter of the silicon carbide seed crystal is 150 mm or more.

9. A silicon carbide single crystal manufacturing apparatus, comprising:

a crucible constituted by a crucible body and a crucible lid; and

a base that is placed on the underside of the crucible lid and holds a silicon carbide seed crystal,

wherein the base has a structure in which a plurality of graphite plates having anisotropy of a thermal expansion coefficient are laminated and bonded, and

when viewed in a plan view from the lamination direction, in the plurality of graphite plates, the maximum directional axes of the thermal expansion coefficient between adjacent graphite plates are orthogonal to each other or the maximum directional axes intersect within an angle range of ±15° from orthogonal,

wherein the thickness of each graphite plate constituting the base is 5 mm or more and 20 mm or less.

10. The silicon carbide single crystal manufacturing apparatus according to claim 9 ,

wherein the anisotropy of the thermal expansion coefficient is 1.02 or more and 1.20 or less.

11. The silicon carbide single crystal manufacturing apparatus according to claim 9 ,

wherein the plurality of graphite plates are 2 to 8 plates.

12. The silicon carbide single crystal manufacturing apparatus according to claim 9 ,

wherein the thickness of each graphite plate constituting the base is the same.

13. A method of manufacturing a silicon carbide single crystal in which a silicon carbide seed crystal and a silicon carbide raw material are placed in a crucible and a sublimation gas sublimated from the silicon carbide raw material is precipitated on the silicon carbide seed crystal to grow the silicon carbide single crystal, using the crucible constituted by a crucible body and a crucible lid, and a base that is placed on the underside of the crucible lid and holds the silicon carbide seed crystal,

wherein the base has a structure in which a plurality of graphite plates having anisotropy of the thermal expansion coefficient are laminated and bonded, and

when viewed in a plan view from the lamination direction, in the plurality of graphite plates, the maximum directional axes of the thermal expansion coefficient between adjacent graphite plates are orthogonal to each other or the maximum directional axes intersect within an angle range of ±15° from orthogonal,

wherein the thickness of each graphite plate constituting the base is 5 mm or more and 20 mm or less.

14. The method of manufacturing the silicon carbide single crystal according to claim 13 , wherein a stress buffering member is arranged between the silicon carbide seed crystal and the base.

15. The method of manufacturing the silicon carbide single crystal according to claim 13 , wherein the outer diameter of the silicon carbide seed crystal is 150 mm or more.