IP Library › Granted Patent US 12,278,600
Granted Patent B2
US 12,278,600 · App. 17/646,162 · Granted Apr 15, 2025

Amplifier bias circuit

Inventors: John P. Bettencourt (Boxford, MA); Valery S. Kaper (Winchester, MA); Steven M. Lardizabal (Westford, MA)
Assignee: Raytheon Company
H03F3/193H03F1/223H03F1/301H03F1/302H03F2200/451
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Quick Facts
Patent No.
US 12,278,600
App. No.
17/646,162
Granted
Apr 15, 2025
Kind
B2
Abstract

Methods and apparatus for an amplifier including first and second transistors coupled in a stacked configuration with first and second current mirrors to provide respective bias signals to the amplifier transistors. A reference transistor is coupled to the first and second current mirrors for referencing the bias signals together.

Claims (34)

1. A circuit, comprising:

an amplifier including first and second transistors coupled in a stacked configuration;

a first current mirror having a first control loop and a first mirror transistor coupled to a terminal of the first transistor to provide a first bias current, wherein the first current mirror includes the first mirror transistor, a first fixed current source, and a first follower transistor coupled to the first mirror transistor in a follower configuration;

a second current mirror having a second control loop and a second mirror transistor coupled to a terminal of the second transistor to provide a second bias current; and

a reference transistor coupled to the first and second current mirrors.

2. The circuit according to claim 1 , wherein the second current mirror includes the second mirror transistor, a second fixed current source, and a second follower transistor coupled to the second mirror transistor in a follower configuration.

3. The circuit according to claim 1 , wherein the reference transistor is coupled to the first mirror transistor and the second mirror transistor.

4. The circuit according to claim 1 , wherein the first control loop further includes at least one diode.

5. The circuit according to claim 1 , wherein an output of the first current mirror is configured to establish a source potential for a common gate reference of the second current mirror.

6. The circuit according to claim 5 , wherein the common gate reference of the second current mirror has a drain current from a second fixed current source.

7. The circuit according to claim 1 , wherein the amplifier comprises a depletion mode FET amplifier.

8. The circuit according to claim 1 , wherein the amplifier comprises an RF amplifier.

9. A method, comprising:

employing an amplifier including first and second transistors coupled in a stacked configuration;

employing a first current mirror having a first control loop and a first mirror transistor coupled to a terminal of the first transistor to provide a first bias current, wherein the first current mirror includes the first mirror transistor, a first fixed current source, and a first follower transistor coupled to the first mirror transistor in a follower configuration;

employing a second current mirror having a second control loop and a second mirror transistor coupled to a terminal of the second transistor to provide a second bias current; and

employing a reference transistor coupled to the first and second current mirrors.

10. The method according to claim 9 , wherein the second current mirror includes the second mirror transistor, a second fixed current source, and a second follower transistor coupled to the second mirror transistor in a follower configuration.

11. The method according to claim 9 , wherein the reference transistor is coupled to the first mirror transistor and the second mirror transistor.

12. The method according to claim 9 , wherein the first control loop further includes at least one diode.

13. The method according to claim 9 , wherein an output of the first current mirror is configured to establish a source potential for a common gate reference of the second current mirror.

14. The method according to claim 13 , wherein the common gate reference of the second current mirror has a drain current from a second fixed current source.

15. The method according to claim 9 , wherein the amplifier comprises a depletion mode FET amplifier.

16. The method according to claim 9 , wherein the amplifier comprises an RF amplifier.

17. A circuit comprising:

an input terminal configured to receive an RF input signal;

an output terminal configured to output an RF output signal;

an amplifier coupled to the input terminal and the output terminal, the amplifier including first and second transistors coupled in a stacked configuration;

a first current mirror having a first control loop and a first mirror transistor coupled to a terminal of the first transistor to provide a first bias current, wherein the first current mirror includes the first mirror transistor, a first fixed current source, and a first follower transistor coupled to the first mirror transistor in a follower configuration;

a second current mirror having a second control loop and a second mirror transistor coupled to a terminal of the second transistor to provide a second bias current; and

a reference transistor coupled to the first and second current mirrors.

18. The circuit of claim 17 , wherein an output of the first current mirror is configured to establish a source potential for a common gate reference of the second current mirror.

19. The circuit of claim 18 , wherein the common gate reference of the second current mirror has a drain current from a second fixed current source.

20. The circuit of claim 17 , wherein the second current mirror includes the second mirror transistor, a second fixed current source, and a second follower transistor coupled to the second mirror transistor in a follower configuration.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 19, 2022
From: BETTENCOURT, JOHN P.; KAPER, VALERY S.; LARDIZABAL, STEVEN M.
To: RAYTHEON COMPANY
Reel/Frame 058694/0564 →
Continuity (1)
Related Publication 20230208364A1 · Jun 29, 2023
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