Current and voltage limit circuitry for resistive random access memory programming
A programming circuitry for a resistor of a resistive random-access memory (ReRAM) is provided. The programming circuitry includes a current-limiting circuit; a current-terminating circuit including a current measurement circuit and a control circuit; and a voltage-limiting circuit, wherein the current-limiting circuit, the current-terminating circuit, and the voltage-limiting circuit operate in concert.
1. A programming circuitry for a resistor of a resistive random-access memory (ReRAM), comprising:
a current-limiting circuit;
a current-terminating circuit including a current measurement circuit and a control circuit; and
a voltage-limiting circuit,
wherein the current-limiting circuit, the current-terminating circuit, and the voltage-limiting circuit operate in concert; and
wherein at least a maximum current through the ReRAM resistor is limited by the current-limiting circuit.
2. The programming circuitry of claim 1 , wherein each of the current-limiting circuit, the current-terminating circuit, and the voltage-limiting circuit is the ReRAM resistor programming circuitry.
3. The programming circuitry of claim 1 , wherein at least a maximum electrical field over the ReRAM resistor is controlled by the programming circuitry.
4. The programming circuitry of claim 1 , wherein any of: the current-limiting circuit, the current-terminating circuit, and the voltage-limiting circuit includes an operational amplifier.
5. The programming circuitry of claim 1 , wherein any of: the current-limiting circuit, the current-terminating circuit, and the voltage-limiting circuit includes a current conveyor.
6. The programming circuitry of claim 1 , wherein programming involves at least one of: forming, set-programming, and reset-programming.
7. The programming circuitry of claim 1 , wherein the programming circuitry is connected to at least one ReRAM cell of a plurality of ReRAM cells of a ReRAM array of cells.
8. A non-volatile memory, comprising:
an array of resistive random-access memory (ReRAM) including a plurality of ReRAM cells, wherein each ReRAM cell includes at least a ReRAM resistor; and
at least a programming circuitry coupled to the at least a ReRAM resistor, wherein the programing circuitry includes a current-limiting circuit, a current-terminating circuit, and a voltage-limiting circuit, wherein the current-limiting circuit, the current-terminating circuit, and the voltage-limiting circuit operate in concert;
wherein at least a maximum current through the ReRAM resistor is limited by the current-limiting circuit.
9. The non-volatile memory of claim 8 , wherein at least a maximum electrical field over the at least a ReRAM resistor is controlled by the at least a programming circuitry.
10. The non-volatile memory of claim 8 , wherein any one of: the current-limiting circuit, the current-terminating circuit, and the voltage-limiting circuit includes an operational amplifier.
11. The non-volatile memory of claim 8 , wherein any one of: the current-limiting circuit, the current-terminating circuit, and the voltage-limiting circuit includes a current conveyor.
12. The non-volatile memory of claim 8 , wherein programming involves at least one of: forming, set-programming, and reset-programming.