Granted Patent B2

US 12,299,243 · App. 17/651,882 · Granted May 13, 2025

Inventors: Chaouki Rouaissia (Neuchatel, CH); Jerald G. Ott, III (Escondido, CA)

Assignee: Semtech Corporation

G06F3/0443G06F3/04182H03K17/955H04M1/0266G06F2203/04101G06F2203/04103G06F2203/04107G06F2203/04108H03K2217/94015H03K2217/94031H03K2217/960705

Abstract

Claims (43)

1. A method of making a semiconductor device, comprising:

providing a sensor controller including,

a capacitive sensor input,

a reference sensor input, and

a digital processor configured to communicate with the capacitive sensor input and reference sensor input;

determining a temperature compensation parameter setting for the semiconductor device based on observed readings from the reference sensor input at a plurality of environmental temperatures, wherein the temperature compensation parameter setting defines a relationship between readings of the capacitive sensor input and readings of the reference sensor input;

using the temperature compensation parameter setting and a reading of the reference sensor input to produce an adjusted reference sensor reading by multiplying the reading of the reference sensor input and the temperature compensation parameter setting; and

adjusting a reading of the capacitive sensor input by subtracting the adjusted reference sensor reading from the reading of the capacitive sensor input.

2. The method of claim 1 , further including storing the parameter setting in a non-volatile memory of the sensor controller.

3. The method of claim 1 , wherein the parameter setting controls a gain of the reference sensor input.

4. The method of claim 1 , further including determining the parameter setting for the semiconductor device during manufacturing.

5. A method of making a semiconductor device, comprising:

providing a sensor controller including a capacitive sensor input and a reference sensor input;

determining a parameter setting for the semiconductor device from observed readings of the reference sensor input at a plurality of environmental temperatures based on a relationship between the reference sensor input and the capacitive sensor input;

using the parameter setting and a reading of the reference sensor input to produce an adjusted reference sensor reading; and

adjusting a reading of the capacitive sensor input using the adjusted reference sensor reading.

6. The method of claim 5 , further including storing the parameter setting in a memory element of the sensor controller.

7. The method of claim 5 , wherein the adjusted reference sensor reading is determined by multiplying the reading of the reference sensor input and the parameter setting.

8. The method of claim 7 , wherein adjusting the reading of the capacitor sensor input includes subtracting the adjusted reference sensor reading from the reading of the capacitor sensor input.

9. The method of claim 5 , wherein the parameter setting controls a gain of the reference sensor input.

10. The method of claim 5 , further including determining the parameter setting for the semiconductor device during manufacturing.

11. The method of claim 5 , further including configuring the sensor controller to adjust the reference sensor input based on the parameter setting.

12. A method of making a semiconductor device, comprising:

providing a main sensor input;

providing a reference sensor input;

determining a parameter setting for the semiconductor device from observed readings of the reference sensor input at a plurality of environmental temperatures based on a relationship between the reference sensor input and the main sensor input;

using the parameter setting to produce an adjusted reference sensor reading; and

adjusting a reading of the main sensor input using the adjusted reference sensor reading.

13. The method of claim 12 , wherein the adjusted reference sensor reading is determined by multiplying the reading of the reference sensor input and the parameter setting.

14. The method of claim 13 , wherein adjusting the reading of the main sensor input includes subtracting the adjusted reference sensor reading from the reading of the main sensor input.

15. The method of claim 13 , wherein the sensor controller is programmed to adjust the reading of the main sensor input by subtracting the adjusted reference sensor reading from the reading of the main sensor input.

16. The method of claim 12 , wherein the parameter setting controls a gain of the reference sensor input.

17. The method of claim 12 , further including determining the parameter setting for the semiconductor device during manufacturing.

18. The method of claim 12 , further including configuring the sensor controller to adjust the reference sensor input based on the parameter setting.

19. A semiconductor device, comprising:

a main sensor input;

a reference sensor input; and

a parameter setting from observed readings of the reference sensor input at a plurality of environmental temperatures defining a relationship between the reference sensor input and the main sensor input; and

a sensor controller programmed to produce an adjusted reference sensor reading using the parameter setting and further to adjust a reading of the main sensor input using the adjusted reference sensor reading.

20. The semiconductor device of claim 19 , wherein the sensor controller is programmed to produce the adjusted reference sensor reading by multiplying the reading of the reference sensor input and the parameter setting.

21. The semiconductor device of claim 20 , wherein the sensor controller is configured to adjust the reference sensor input based on the parameter setting.

22. The semiconductor device of claim 19 , wherein the parameter setting controls a gain of the reference sensor input.

23. The semiconductor device of claim 19 , wherein the parameter setting is stored in non-volatile memory of the semiconductor device.

Assignments (2)

Continuity (6)

References Cited (35)