Radio frequency (RF) semiconductor devices including a ground plane layer having a superlattice
A radio frequency (RF) semiconductor device may include a semiconductor-on-insulator substrate, and an RF ground plane layer on the semiconductor-on-insulator substrate including a conductive superlattice. The conductive superlattice may include stacked groups of layers, with each group of layers comprising stacked doped base semiconductor monolayers defining a doped base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent doped base semiconductor portions. The RF semiconductor device may further include a body above the RF ground plane layer, spaced apart source and drain regions adjacent the body and defining a channel region in the body, and a gate overlying the channel region.
1. A radio frequency (RF) semiconductor device comprising:
a semiconductor-on-insulator substrate comprising a doped semiconductor layer on a buried oxide (BOX) layer;
a conductive superlattice on the doped semiconductor layer, the conductive superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked doped base semiconductor monolayers defining a doped base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent doped base semiconductor portions, the conductive superlattice and doped semiconductor layer defining an RF ground plane layer;
a body above the RF ground plane layer;
spaced apart source and drain regions adjacent the body and defining a channel region in the body; and
a gate overlying the channel region;
wherein the RF ground plane layer has a thickness in a range of about 10-50 nm and a dopant concentration in a range of about 5×10 17 cm −3 to 1×10 18 cm −3 .
2. The RF semiconductor device of claim 1 wherein the RF semiconductor device comprises an RF switch.
3. The RF semiconductor device of claim 1 further comprising a body contact coupled to the body and the RF ground plane layer.
4. The RF semiconductor device of claim 3 wherein the body contact comprises first and second body contact portions adjacent opposite ends of the channel region.
5. The RF semiconductor device of claim 1 wherein the gate comprises a gate insulator over the channel region, and a gate electrode over the gate insulator.
6. The RF semiconductor device of claim 1 wherein the doped base semiconductor monolayers comprise silicon.
7. The RF semiconductor device of claim 1 wherein the non-semiconductor monolayers comprise oxygen.
8. The RF semiconductor device of claim 1 wherein the doped semiconductor layer comprises a doped silicon layer.
9. A radio frequency (RF) semiconductor device comprising:
a silicon-on-insulator (SOI) substrate comprising a doped silicon layer on a buried oxide (BOX) layer;
a conductive superlattice on the doped silicon layer, the conductive superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked doped base silicon monolayers defining a doped base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent doped base silicon portions, the conductive superlattice and doped silicon layer defining an RF ground plane layer;
a body above the RF ground plane layer;
spaced apart source and drain regions adjacent the body and defining a channel region in the body; and
a gate overlying the channel region;
wherein the RF ground plane layer has a thickness in a range of about 10-50 nm and a dopant concentration in a range of about 5×10 17 cm −3 to 1×10 18 cm −3 .
10. The RF semiconductor device of claim 9 wherein the RF semiconductor device comprises an RF switch.
11. The RF semiconductor device of claim 9 further comprising a body contact coupled to the body and the RF ground plane layer.
12. The RF semiconductor device of claim 11 wherein the body contact comprises first and second body contact portions adjacent opposite ends of the channel region.
13. The RF semiconductor device of claim 9 wherein the gate comprises a gate insulator over the channel region, and a gate electrode over the gate insulator.
14. A radio frequency (RF) switch comprising:
a semiconductor-on-insulator substrate comprising a doped semiconductor layer on a buried oxide (BOX) layer;
a conductive superlattice on the doped semiconductor layer, the conductive superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked doped base semiconductor monolayers defining a doped base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent doped base semiconductor portions, the conductive superlattice and doped semiconductor layer defining an RF ground plane layer;
a body above the RF ground plane layer;
a body contact coupled to the body and the RF ground plane layer;
spaced apart source and drain regions adjacent the body and defining a channel region in the body; and
a gate overlying the channel region for controlling charge carrier flow through the channel region responsive to an RF switching control signal;
wherein the RF ground plane layer has a thickness in a range of about 10-50 nm and a dopant concentration in a range of about 5×10 17 cm −3 to 1×10 18 cm −3 .
15. The RF switch of claim 14 wherein the body contact comprises first and second body contact portions adjacent opposite ends of the channel region.
16. The RF switch of claim 14 wherein the gate comprises a gate insulator over the channel region, and a gate electrode over the gate insulator.
17. The RF switch of claim 14 wherein the doped base semiconductor monolayers comprise silicon, and the non-semiconductor monolayers comprise oxygen.