Dual vertical gate and image sensor including the same
An image sensor includes a dual vertical gate. The dual vertical gate includes two vertical extension portions that are spaced apart from each other in a first direction and vertically extend in a second direction perpendicular to the first direction into a substrate, and a connection portion that connects the two vertical extension portions to each other. An element isolation layer is disposed adjacent to a side surface of the vertical extension portion in the first direction. The two vertical extension portions are separated by a separation area that extends in the second direction, and a top surface of the separation area is lower than a top surface of the element isolation layer.
1. An image sensor, comprising:
a substrate comprising a front side and a back side opposing the front side; and
a dual vertical gate that includes a first vertical extension portion, a second vertical extension portion spaced apart from the first vertical extension portion in a first direction by a separation area, and a connection portion that connects the first vertical extension portion and the second vertical extension portion,
wherein each of the first and second vertical extension portions vertically extends in a third direction perpendicular to the first direction into a substrate from the front side of the substrate to the back side of the substrate,
wherein the separation area has a top surface and a bottom surface opposing the top surface,
wherein a distance from the top surface of the separation area to the front side of the substrate in the third direction is shorter than a distance from the bottom surface of the separation area to the front side of the substrate in the third direction,
wherein the top surface of the separation area is spaced apart from the front side of the substrate in the third direction,
wherein the top surface of the separation area is disposed in the substrate,
wherein the first vertical extension portion has a first width at a level of the top surface of the separation area in the first direction and has a second width at a level of the bottom surface of the separation area in the first direction, and
wherein the second width is smaller than the first width.
2. The image sensor of claim 1 , wherein a width of the bottom surface of the separation area in the first direction is shorter than the second width of the first vertical extension portion.
3. The image sensor of claim 1 , wherein the first vertical extension portion has a first side surface and a second side surface opposing the first side surface in a vertical view,
wherein the first side surface of the first vertical extension portion is in contact with the separation area, and
wherein the second side surface of the first vertical extension portion is inclined in the third direction.
4. The image sensor of claim 3 , wherein the second side surface of the first vertical extension portion is inclined in the third direction toward the separation area.
5. The image sensor of claim 3 , further comprising:
an element isolation layer disposed directly adjacent to the second side surface of the first vertical extension portion.
6. The image sensor of claim 1 , wherein a width of the separation area in the first direction increases in the third direction from the top surface of the separation area to the bottom surface of the separation area.
7. The image sensor of claim 1 , wherein the separation area is filled with silicon.
8. An image sensor, comprising:
a substrate comprising a front side and a back side opposing the front side; and
a dual vertical gate that includes a first vertical extension portion, a second vertical extension portion spaced apart from the first vertical extension portion in a first direction by a separation area, and a connection portion that connects the first vertical extension portion and the second vertical extension portion,
wherein each of the first and second vertical extension portions vertically extends in a third direction perpendicular to the first direction into a substrate from the front side of the substrate to the back side of the substrate,
wherein the separation area has a top surface and a bottom surface opposing the top surface,
wherein a distance from the top surface of the separation area to the front side of the substrate in the third direction is shorter than a distance from the bottom surface of the separation area to the front side of the substrate in the third direction,
wherein the top surface of the separation area is spaced apart from the front side of the substrate in the third direction,
wherein the top surface of the separation area is disposed in the substrate, and
wherein a width of the bottom surface of the separation area in the first direction is smaller than a distance from the bottom surface of the separation area to the front side of the substrate.
9. The image sensor of claim 8 , wherein the first vertical extension portion and the second vertical extension portion meet at the top surface of the separation area.
10. The image sensor of claim 8 , wherein a width of the top surface of the separation area in the first direction is smaller than a width of first vertical extension portion at a level of the bottom surface of the separation area in the first direction.
11. The image sensor of claim 8 , wherein the first vertical extension portion has a first side surface and a second side surface opposing the first side surface in a vertical view,
wherein the first side surface of the first vertical extension portion is in contact with the separation area, and
wherein the second side surface of the first vertical extension portion is inclined in the third direction.
12. The image sensor of claim 11 , wherein the second side surface of the first vertical extension portion is inclined in the third direction toward the separation area.
13. The image sensor of claim 8 , wherein the separation area is filled with silicon that forms the substrate.
14. The image sensor of claim 8 , wherein a width of the separation area in the first direction increases in the third direction.