Oxidation and corrosion prevention in semiconductor devices and semiconductor device assemblies
In some aspects, the techniques described herein relate to an electronic device including: a substrate; a metallization layer, the metallization layer having: a first surface disposed on the substrate; a second surface opposite the first surface; and a corrosion-prevention implant layer disposed in the metallization layer, the corrosion-prevention implant layer extending from the second surface to a depth from the second surface in the metallization layer, the depth being less than a thickness of the metallization layer; and an electrical connector coupled with the second surface.
1. An electronic device comprising:
a substrate;
a metallization layer, the metallization layer having:
a first surface disposed on the substrate;
a second surface opposite the first surface; and
a corrosion-prevention implant layer disposed in the metallization layer, the corrosion-prevention implant layer extending from the second surface to a depth from the second surface in the metallization layer, the depth being less than a thickness of the metallization layer, the corrosion-prevention implant layer including at least one of aluminum or magnesium; and
an electrical connector coupled with the second surface.
2. The electronic device of claim 1 , wherein the substrate includes a semiconductor device.
3. The electronic device of claim 1 , wherein:
the substrate includes a ceramic substrate; and
the metallization layer is direct-bonded to the ceramic substrate.
4. The electronic device of claim 1 , wherein the metallization layer includes a copper metallization layer.
5. The electronic device of claim 1 , wherein the metallization layer includes one of an aluminum metallization layer, an aluminum-copper metallization layer, a titanium-nickel-copper metallization layer, or a titanium-nickel-silver metallization layer.
6. The electronic device of claim 1 , wherein the electrical connector includes one of a conductive clip, or a bond wire.
7. The electronic device of claim 1 , wherein:
the thickness of the metallization layer is greater than or equal to 1 micrometer; and
the depth of the corrosion-prevention implant layer is less than or equal to 100 nanometers.
8. The electronic device of claim 1 , wherein the depth of the corrosion-prevention implant layer is less than or equal to ten percent of the thickness of the metallization layer.
9. The electronic device of claim 1 , wherein the corrosion-prevention implant layer is:
disposed in a first portion of the metallization layer that is coupled with the electrical connector; and
excluded from a second portion of the metallization layer, the second portion being different than the first portion.
10. A semiconductor device comprising:
a semiconductor substrate;
a top level metallization layer disposed on the semiconductor substrate;
a passivation layer including an opening, the opening exposing a surface of a portion of the top level metallization layer;
a corrosion-prevention implant layer disposed in the portion of the top level metallization layer, the corrosion-prevention implant layer extending from the exposed surface to a depth from the exposed surface in the top level metallization layer, the depth being less than a thickness of the top level metallization layer, the corrosion-prevention implant layer including at least one of aluminum or magnesium; and
an electrical connector coupled with the exposed surface.
11. The semiconductor device of claim 10 , wherein the top level metallization layer includes a copper metallization layer.
12. The semiconductor device of claim 10 , wherein the top level metallization layer includes one of an aluminum metallization layer, an aluminum-copper metallization layer, or a titanium-nickel-silver metallization layer.
13. The semiconductor device of claim 10 , wherein the electrical connector includes one of a conductive clip, or a bond wire.
14. The semiconductor device of claim 10 , wherein:
the thickness of the top level metallization layer is greater than or equal to 1 micrometer; and
the depth of the corrosion-prevention implant layer is less than or equal to 100 nanometers.
15. The semiconductor device of claim 10 , wherein the depth of the corrosion-prevention implant layer is less than or equal to ten percent of the thickness of the top level metallization layer.
16. A method for producing an electronic device, the method comprising:
forming a metallization layer on a substrate, the metallization layer having:
a first surface disposed on the substrate; and
a second surface opposite the first surface;
forming a corrosion-prevention implant layer in the metallization layer, the corrosion-prevention implant layer extending from the second surface to a depth from the second surface in the metallization layer, the depth being less than a thickness of the metallization layer, the corrosion-prevention implant layer including at least one of aluminum or magnesium; and
coupling an electrical connector with the second surface.
17. The method of claim 16 , wherein the electrical connector includes one of a conductive clip, or a bond wire.