IP Library › Granted Patent US 12,720,827
Granted Patent B2
US 12,720,827 · App. 17/660,818 · Granted Aug 25, 2026

Epitaxial structures grown on material with a crystallographic orientation of {110}

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,720,827
App. No.
17/660,818
Filed
Apr 26, 2022
Granted
Aug 25, 2026
Kind
B2
Art Unit
2898
USPC
257/627
Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 26, 2022
From: LIU, WEI-MIN; KWOK, TSZ-MEI; YANG, YUNG-CHUN; WEN, CHENG-YEN; SU, LI-LI; LI, CHII-HORNG; YEO, YEE-CHIA; HUANG, HUI-LIN
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 061536/0379 →
Continuity (1)
Related Publication 20230343819A1 · Oct 26, 2023
References Cited (11)
US 9437496B1 · Chudzik · 2016 [cited by examiner]
US 9570556B1 · Lee · 2017 [cited by examiner]
US 20100148174A1 · Nakahata et al. · 2010 [cited by applicant]
US 20170148907A1 · Wu · 2017 [cited by examiner]
US 20180053690A1 · Wang · 2018 [cited by examiner]
US 20180358435A1 · Mochizuki · 2018 [cited by examiner]
US 20200365692A1 · Jung · 2020 [cited by examiner]
US 20210098304A1 · Chang · 2021 [cited by examiner]
US 20210391423A1 · Lin et al. · 2021 [cited by applicant]
US 20220199773A1 · Rachmady · 2022 [cited by examiner]
TW 200925340A · 2009 [cited by applicant]