Methods of forming electronic devices comprising silicon carbide materials
An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.
1. A method of forming an electronic device, comprising:
forming stacks of materials comprising one or more materials, the one or more materials of the stacks comprising a chalcogenide material;
forming a silicon carbide material by radical chemical vapor deposition, the silicon carbide material adjacent to the stacks of materials, the radical chemical vapor deposition comprising reacting a silicon-carbon precursor with a hydrogen radical, the silicon-carbon precursor comprising silicon-carbon covalent bonds; and
forming a fill material adjacent to the silicon carbide material and between adjacent stacks of the stacks of materials.
2. The method of claim 1 , wherein forming a silicon carbide material by radical chemical vapor deposition comprises forming the silicon carbide material from a single silicon-carbon precursor comprising silicon-carbon covalent bonds.
3. The method of claim 2 , further comprising forming the silicon carbide material from a silicon-carbon precursor comprising one or more of silicon-oxygen covalent bonds and silicon-nitrogen covalent bonds.
4. The method of claim 1 , wherein forming a silicon carbide material by radical chemical vapor deposition comprises forming a liner comprising the silicon carbide material adjacent to the stacks of materials.
5. The method of claim 1 , wherein forming a silicon carbide material by radical chemical vapor deposition comprises forming a seal comprising the silicon carbide material adjacent to the stacks of materials.
6. The method of claim 1 , further comprising exposing the silicon carbide material to an oxygen plasma treatment.
7. The method of claim 6 , wherein exposing the silicon carbide material to an oxygen plasma treatment comprises reducing a carbon content of the silicon carbide material relative to a carbon content of the silicon carbide material as initially formed.
8. The method of claim 1 , wherein forming a fill material adjacent to the silicon carbide material comprises forming an additional portion of the silicon carbide material as the fill material.
9. A method of forming an electronic device, comprising:
forming stacks of materials including a chalcogenide material and a conductive carbon material, a conductive material, or a hardmask material;
forming a liner or a seal comprising a silicon carbide material by radical chemical vapor deposition adjacent to the stacks of materials, the radical chemical vapor deposition comprising reacting a silicon-carbon precursor with a hydrogen radical, the silicon-carbon precursor comprising silicon-carbon covalent bonds; and
forming a fill material adjacent to the silicon carbide material or adjacent to a cap, the cap comprising silicon oxide.
10. The method of claim 9 , wherein forming a liner or a seal comprising a silicon carbide material by radical chemical vapor deposition comprises forming the silicon carbide material from a silicon-carbon precursor comprising silicon-carbon covalent bonds and one or more silicon-hydrogen covalent bonds or silicon-silicon covalent bonds.
11. The method of claim 9 , wherein forming a liner or a seal comprising a silicon carbide material by radical chemical vapor deposition adjacent to the stacks of materials comprises forming the liner adjacent to the stacks of materials.
12. The method of claim 9 , further comprising treating the silicon carbide material to decrease a dielectric constant of the silicon carbide material.
13. The method of claim 9 , wherein forming a liner or a seal comprising a silicon carbide material comprises forming the silicon carbide material comprising a gradient of carbon across a thickness of the silicon carbide material.
14. The method of claim 13 , wherein forming the silicon carbide material comprising a gradient of carbon comprises forming the silicon carbide material comprising a silicon-rich portion proximal to the stacks.
15. The method of claim 9 , wherein forming a liner or a seal comprising a silicon carbide material by radical chemical vapor deposition comprises forming the liner or the seal at a temperature from about 50° C. to about 500° C.
16. The method of claim 9 , further comprising exposing the silicon carbide material to at least two oxygen plasma treatment cycles prior to forming the fill material.
17. The method of claim 9 , further comprising performing one or more treatment acts on the silicon carbide material to reduce a carbon content of the silicon carbide material.
18. The method of claim 9 , wherein forming a fill material adjacent to the silicon carbide material or adjacent to a cap comprises forming the fill material substantially without voids between the stacks of materials.
19. A method of forming an electronic device, comprising:
forming a stack of materials including one or more materials sensitive to oxidation or heat and a conductive material or a hardmask material;
forming a silicon carbide material by radical chemical vapor deposition (CVD) adjacent to the stack of materials, the radical chemical vapor deposition comprising reacting a silicon-carbon precursor with a hydrogen radical, the silicon-carbon precursor comprising silicon-carbon covalent bonds; and
exposing the silicon carbide material to an oxygen plasma treatment.
20. The method of claim 19 , wherein exposing the silicon carbide material to an oxygen plasma treatment comprises adjusting a carbon content of the silicon carbide material by adjusting a ratio of a silicon-carbon precursor to oxygen.
21. The method of claim 1 , wherein forming a silicon carbide material by radical chemical vapor deposition comprises forming the silicon carbide material comprising silicon carbide, silicon carboxide , silicon carbonitride , silicon carboxynitride, silicon boronitrocarbide, or any combination thereof.
22. The method of claim 1 , wherein forming a silicon carbide material by radical chemical vapor deposition comprises forming the silicon carbide material in an absence of direct plasma, oxidative environment, or both.
23. The method of claim 1 , wherein forming a fill material adjacent to the silicon carbide material and between adjacent stacks of the stacks of materials comprises forming a fill material substantially free of voids.