TVS diode circuit with high energy dissipation and linear capacitance
A TVS circuit having a first diode with a cathode coupled to a first terminal and an anode coupled to a first node. A second diode has an anode coupled to a second node and a cathode coupled to a third node. A third diode is coupled between the first node and second node. A fourth diode is coupled between the first node and third node. A fifth diode is coupled between the second node and a second terminal. A sixth diode is coupled between the second terminal and the third node. A seventh diode can be coupled between the second terminal and an intermediate node between the fifth diode and sixth diode. The first diode is disposed on a first semiconductor die, while the second diode is disposed on a second semiconductor die. Alternatively, the first diode and second diode are disposed on a single semiconductor die.
1. A transient voltage suppression (TVS) circuit, comprising:
a first diode including a cathode coupled to a first terminal of the TVS circuit and an anode coupled to a first node;
a silicon controlled rectifier including an anode coupled to a second node and a cathode coupled to a third node;
a second diode including a cathode coupled to the first node and an anode coupled to the second node;
a third diode including an anode coupled to the first node and a cathode coupled to the third node;
a fourth diode including an anode coupled to the second node and a cathode coupled to a second terminal of the TVS circuit; and
a fifth diode including an anode coupled to the second terminal and a cathode couple to the third node to provide the TVS circuit.
2. The TVS circuit of claim 1 , wherein the first diode is disposed within a high voltage portion of the TVS circuit.
3. The TVS circuit of claim 1 , wherein the silicon controlled rectifier is disposed within a low voltage portion of the TVS circuit.
4. The TVS circuit of claim 1 , wherein the first diode and silicon controlled rectifier are disposed on a common semiconductor die.
5. The TVS circuit of claim 1 , wherein the first diode is disposed on a first semiconductor die and the silicon controlled rectifier is disposed on a second semiconductor die.
6. The TVS circuit of claim 1 , wherein the silicon controlled rectifier includes:
a first transistor comprising a first conduction terminal coupled to the second node; and
a second transistor comprising a first conduction terminal coupled to a control terminal of the first transistor, a control terminal coupled to a second conduction terminal of the first transistor, and a second conduction terminal coupled to the third node.
7. A transient voltage suppression (TVS) circuit, comprising:
a first TVS diode coupled between a first terminal of the TVS circuit and a first node;
a silicon controlled rectifier including an anode coupled to a second node and a cathode coupled to a third node; and
a diode bridge coupled between the second node and third node and a second terminal of the TVS circuit, wherein the diode bridges include,
(a) a second diode comprising a cathode coupled to the first node and an anode coupled to the second node,
(b) a third diode comprising an anode coupled to the first node and a cathode coupled to the third node,
(c) a fourth diode comprising an anode coupled to the second node and a cathode coupled to a second terminal of the TVS circuit, and
(d) a fifth diode comprising an anode coupled to the second terminal and a cathode couple to the third node.
8. The TVS circuit of claim 7 , further including a second TVS diode coupled between the second terminal and an intermediate node of the diode bridge.
9. The TVS circuit of claim 7 , wherein the first TVS diode and silicon controlled rectifier are disposed on a common semiconductor die.
10. The TVS circuit of claim 7 , wherein the first TVS diode is disposed on a first semiconductor die and the silicon controlled rectifier is disposed on a second semiconductor die.
11. The TVS circuit of claim 7 , wherein the silicon controlled rectifier includes:
a first transistor comprising a first conduction terminal coupled to the second node; and
a second transistor comprising a first conduction terminal coupled to a control terminal of the first transistor, a control terminal coupled to a second conduction terminal of the first transistor, and a second conduction terminal coupled to the third node.
12. The TVS circuit of claim 7 , wherein the first TVS diode is disposed within a high voltage portion of the TVS circuit, and the silicon controlled rectifier is disposed within a low voltage portion of the TVS circuit.
13. A method of making a transient voltage suppression (TVS) circuit, comprising:
providing a first TVS diode coupled between a first terminal of the TVS circuit and a first node;
providing a silicon controlled rectifier including an anode coupled to a second node and a cathode coupled to a third node; and
providing a diode bridge coupled between the second node and third node and a second terminal of the TVS circuit by,
(a) providing a second diode comprising a cathode coupled to the first node and an anode coupled to the second node,
(b) providing a third diode comprising an anode coupled to the first node and a cathode coupled to the third node,
(c) providing a fourth diode comprising an anode coupled to the second node and a cathode coupled to a second terminal of the TVS circuit, and
(d) providing a fifth diode comprising an anode coupled to the second terminal and a cathode couple to the third node.
14. The method of claim 13 , further including providing a second TVS diode coupled between the second terminal and an intermediate node of the diode bridge.
15. The method of claim 13 , wherein the first TVS diode and silicon controlled rectifier are disposed on a common semiconductor die.
16. The method of claim 13 , wherein the first TVS diode is disposed on a first semiconductor die and the silicon controlled rectifier is disposed on a second semiconductor die.
17. The method of claim 13 , wherein providing the silicon controlled rectifier includes:
providing a first transistor comprising a first conduction terminal coupled to the second node; and
providing a second transistor comprising a first conduction terminal coupled to a control terminal of the first transistor, a control terminal coupled to a second conduction terminal of the first transistor, and a second conduction terminal coupled to the third node.
18. The method of claim 13 , wherein the first TVS diode is disposed within a high voltage portion of the TVS circuit, and the silicon controlled rectifier is disposed within a low voltage portion of the TVS circuit.