Epitaxial semiconductor 3D horizontal nano sheet with high mobility 2D material channel
Methods for the manufacture of semiconductor devices constructed with three-dimensional (3D) horizontal nano sheets with high mobility two-dimensional (2D) material channels are disclosed. Aspects can include forming a semiconductor material; selectively forming a seed material around the bridge; selectively forming a two-dimensional (2D) material around the seed material; forming an active gate around a central portion of the 2D material thereby exposing end portions of the 2D material; and growing source/drain structures coupled to the end portions of the 2D material, respectively.
1. A device, comprising:
a semiconductor material;
a pair of first dielectric materials in contact with the semiconductor material through only respective ends of the semiconductor material;
a seed material wrapping around the semiconductor material and the pair of first dielectric materials, except sidewalls of the pair of first dielectric materials;
a two-dimensional (2D) material wrapping around the seed material;
an active gate wrapping around the 2D material; and
a pair of source/drain structures in contact with the 2D material.
2. The device of claim 1 , further comprising:
a pair of second dielectric materials coupled to both ends of an upper portion of the active gate; and
a pair of third dielectric materials coupled to both ends of a lower portion of the active gate.
3. The device of claim 2 , wherein the pair of second dielectric materials are configured to electrically isolate at least the upper portion of the active gate from the pair of source/drain structures, and wherein the pair of third dielectric materials are configured to electrically isolate at least the lower portion of the active gate from the pair of source/drain structures.
4. The device of claim 1 , wherein the seed material includes an oxidized portion of the semiconductor material.
5. The device of claim 1 , wherein the active gate comprises:
a high-k dielectric material around a portion of the 2D material; and
a gate metal around a portion of the high-k dielectric material.
6. The device of claim 5 , wherein the portion of the 2D material has a first length and the portion of the high-k dielectric material has a second length, the first length being longer than the second length.
7. The device of claim 1 , further comprising:
a second semiconductor material;
a pair of second dielectric materials in contact with the second semiconductor material through only respective ends of the second semiconductor material;
a second seed material wrapping around the second semiconductor material and the pair of second dielectric materials, except sidewalls of the pair of second dielectric materials;
a second 2D material wrapping around the second seed material;
a second active gate wrapping around the second 2D material; and
a second pair of source/drain structures coupled to the 2D material.
8. The device of claim 7 , wherein the 2D material is an N-type material and the second 2D material is a P-type material.
9. A transistor structure comprising:
a source metal;
a drain metal;
a two-dimensional (2D) channel material partially wrapping around a semiconductor material that extends between the source metal and the drain metal, wherein a first end of the semiconductor material is in contact with only a first dielectric material, and a second end of the semiconductor material is in contact with only a second dielectric material;
a high-k dielectric partially wrapping around the 2D channel material;
a gate metal partially wrapping around the high k-dielectric;
a first dielectric isolating the gate metal from the source metal; and
a second dielectric isolating the gate metal from the drain metal.
10. The transistor structure of claim 9 , further comprising a seed material around the semiconductor material, wherein the 2D channel material is coupled to the seed material.
11. The transistor structure of claim 9 , wherein the source metal and the drain metal are coupled to the 2D channel material and the high-k dielectric material.