TRANSISTOR AND ITS METHOD OF MANUFACTURE
A transistor is disclosed, comprising: a layer of semiconductor material comprising a first portion, a second portion, and a third portion connecting the first portion to the second portion and providing a semiconductive channel between the first portion and the second portion; a conductive first terminal covering and in electrical contact with said first portion of the layer of semiconductor material; a conductive second terminal covering and in electrical contact with said second portion of the layer of semiconductor material; a conductive gate terminal comprising a first overlapping portion covering at least part of the first terminal, and a channel portion covering the third portion of the layer of semiconductor material; and a layer of a first dielectric material, having a first dielectric constant, arranged between the first overlapping portion and the first terminal, and between the channel portion of the gate terminal and the third portion of the layer of semiconductor material. The transistor further comprises a layer of a second dielectric material having a second dielectric constant, the second dielectric constant being lower than the first dielectric constant, the layer of second dielectric material being arranged between at least part of the first overlapping portion and the first terminal, whereby at least part of the first overlapping portion of the gate terminal is separated from the first terminal by the layer of first dielectric material and the layer of second dielectric material.
1 . A transistor comprising:
a layer (or other body) of semiconductor material comprising a first portion, a second portion, and a third portion connecting the first portion to the second portion and providing a semiconductive channel between the first portion and the second portion;
a conductive first terminal covering and in electrical contact with said first portion of the layer of semiconductor material;
a conductive second terminal covering and in electrical contact with said second portion of the layer of semiconductor material;
a conductive gate terminal comprising a first overlapping portion covering at least part of the first terminal, and a channel portion covering the third portion of the layer of semiconductor material; and
a layer (or other body) of a first dielectric material, having a first dielectric constant, arranged between the first overlapping portion and the first terminal, and between the channel portion of the gate terminal and the third portion of the layer of semiconductor material,
characterised in that the transistor further comprises a layer (or other body) of a second dielectric material having a second dielectric constant, said second dielectric constant being lower than said first dielectric constant, said layer of said second dielectric material being arranged between at least part of the first overlapping portion and the first terminal,
whereby said at least part of the first overlapping portion of the gate terminal is separated from the first terminal by said layer of first dielectric material and said layer of second dielectric material.
2 - 31 . (canceled)