Direct-bonded native interconnects and active base die
Direct-bonded native interconnects and active base dies are provided. In a microelectronic architecture, active dies or chiplets connect to an active base die via their core-level conductors. These native interconnects provide short data paths, which forgo the overhead of standard interfaces. The system saves redistribution routing as the native interconnects couple in place. The base die may contain custom logic, allowing the attached dies to provide stock functions. The architecture can connect diverse interconnect types and chiplets from various process nodes, operating at different voltages. The base die may have state elements for drive. Functional blocks aboard the base die receive native signals from diverse chiplets, and communicate with all attached chiplets. The chiplets may share processing and memory resources of the base die. Routing blockages are minimal, improving signal quality and timing. The system can operate at dual or quad data rates. The architecture facilitates ASIC, ASSP, and FPGA ICs and neural networks, reducing footprint and power requirements.
1. A system, comprising:
an active base die configured to receive a first signal; and
a first die comprising a first functional block and a first conductor that is direct-bonded to the active base die by a first interconnect, wherein
the first signal is received at the active base die from the first functional block through an unserialized data path, and
the unserialized data path comprises the first conductor and the first interconnect.
2. The system of claim 1 , wherein the first functional block comprises a multiplier, an arithmetic logic unit (ALU), an instruction decoder, a digital signal processor (DSP), a subsystem intellectual property (IP) core, or a combination thereof.
3. The system of claim 1 , wherein the first functional block comprises an intellectual property (IP) core, the IP core comprising a memory controller or a reusable unit of logic.
4. The system of claim 1 , wherein the first signal is transmitted between the first die and the active base die without the use of a standard interface comprising an input/output (I/O) protocol.
5. The system of claim 1 , wherein the first die comprises a plurality of first conductors direct bonded to the active base die by a plurality of first interconnects, and the plurality of first conductors have a pitch of between 0.1 μm and 5 μm at a surface of the first die.
6. The system of claim 5 , wherein the plurality of first conductors are respectively direct-bonded to a corresponding plurality of bond pads disposed in a surface of the active base die.
7. The system of claim 1 , wherein the first die comprises a plurality of first conductors direct bonded to the base die by a plurality of first interconnects, and the plurality of first conductors and the plurality of first interconnects form one or more continuous circuits between the first die and base die.
8. The system of claim 7 , wherein the first die and the base die are in two-way communication through the one or more continuous circuits.
9. The system of claim 1 , wherein the first interconnect is selected from a group consisting of a direct bond interconnect (DBI) metallization layer, a copper-to-copper diffusion bond, a connection with conductive nanotubes, a metal-to-metal contact, and a hybrid interconnect.
10. The system of claim 1 , wherein the first interconnect comprises a direct bond interconnect (DBI) metallization layer.
11. The system of claim 1 , wherein the active base die comprises one or more voltage regulators or voltage regulation domains for adjusting voltages between different dies bonded to the active base die.
12. The system of claim 1 , wherein the first conductor comprises a repeater, a buffer, a driver, a redriver, a state machine, a voltage regulator, a timing component, or a combination thereof.
13. The system of claim 1 , further comprising:
a second die comprising a second functional block and a second conductor direct-bonded to the active base die by a second interconnect, wherein the active base die is configured to receive a second signal from the second functional block through an unserialized data path comprising the second conductor and the second interconnect.
14. The system of claim 13 , wherein the first conductor is directed bonded to a first side of the active base die and the second conductor is direct-bonded to an opposite second side of the active base die.
15. The system of claim 13 , wherein the first die and the second die are disposed on the active base die in a stacked arrangement, and the second conductor comprises a via formed through the first die.
16. The system of claim 13 , wherein the first die and the second die are disposed on the active base die in a side-by-side arrangement.
17. The system of claim 16 , further comprising a third die disposed on the second die.
18. The system of claim 1 , further comprising:
a second die disposed on the first die in a stacked arrangement, the second die comprising a second functional block and a second conductor direct-bonded to the first die by a second interconnect, wherein the first die is configured to receive a second signal from the second functional block through an unserialized data path comprising the second conductor and the second interconnect.
19. The system of claim 18 , wherein at least one of the first or second functional blocks comprise a memory controller.
20. The system of claim 1 , further comprising a plurality of micron-size second die disposed on the base die in a side-by-side arrangement with the first die, wherein each of the plurality of second die comprises a second functional block and a second conductor direct-bonded to the active base die by a second interconnect, the active base die is configured to receive second signals from the second functional blocks through unserialized data paths that each comprise a second conductor and a second interconnect.