Fast spatial light modulator based on atomically thin reflector
An optical device useful for spatial light modulation. The device comprises: a semiconductor layer having a first surface and a second surface, the semiconductor having an electric field-dependent resonance wavelength; a first electrode electrically connected to the semiconductor layer; a first insulating layer adjacent to the first surface of the semiconductor layer, and a second insulating layer adjacent to the second surface of the semiconducting layer, the first and the second insulating layers each being optically transparent at the resonance wavelength; a first group of at least one gate electrodes disposed adjacent to the first insulating layer, and a second group of at least one gate electrodes disposed adjacent to the second insulating layer, each gate electrode being at least 80% optically transparent at the resonance wavelength; wherein the first and the second groups of gate electrodes, taken together, form at least two regions in the semiconductor layer, an electrostatic field in each of the at least two regions being independently controllable by application of voltage to the first and the second groups of gate electrodes, the at least two regions abutting each other along at least one boundary.
1. An optical device, comprising:
a semiconductor layer having a first surface and a second surface, the semiconductor having an electric field-dependent resonance wavelength;
a first electrode electrically connected to the semiconductor layer;
a first insulating layer adjacent to the first surface of the semiconductor layer, and a second insulating layer adjacent to the second surface of the semiconducting layer, the first and the second insulating layers each being optically transparent at the resonance wavelength;
a first group of at least one gate electrodes disposed adjacent to the first insulating layer, and a second group of at least one gate electrodes disposed adjacent to the second insulating layer, each gate electrode being at least 80% optically transparent at the resonance wavelength, wherein
the first and the second groups of gate electrodes, taken together, form at least two regions in the semiconductor layer, an electrostatic field in each of the at least two regions being independently controllable by application of voltage to the first and the second groups of gate electrodes, the at least two regions abutting each other along at least one boundary.
2. The optical device of claim 1 , wherein the semiconductor is a semiconductor having electrostatic doping level-dependent resonance wavelength.
3. The optical device of claim 1 , wherein the semiconductor layer comprises a transition metal dichalcogenide (TMD).
4. The optical device of claim 3 , wherein the TMD is selected from MoSe 2 , WSe 2 , MoS 2 , or WS 2 .
5. The optical device of claim 1 , wherein the first and second insulating layers each comprises a material independently selected from boron nitride (BN), SiO 2 , Al 2 O 3 (alumina), TiO 2 , or SiN.
6. The optical device of claim 1 , wherein the first and second insulating layers are each atomically flat.
7. The optical device of claim 1 , wherein each of the plurality of electrodes comprises a material independently selected from graphene, indium tin oxide (ITO), fluorine doped tin oxide (FTO), or doped zinc oxide.
8. The optical device of claim 1 , wherein the first group of gate electrodes and the second group of gate electrodes taken together form a rectangular grid, and wherein the boundaries are straight line segments.
9. The optical device of claim 1 , wherein:
the TMD is MoSe 2 ;
the first and second insulating layers each comprises a hexagonal boron nitride (hBN); and
each of the plurality of electrodes comprises graphene.
10. The optical device of claim 1 , wherein the semiconductor layer is atomically thin.
11. A method of changing the reflective properties of a surface, the surface comprising an optical device, the optical device comprising:
a semiconductor layer having a first surface and a second surface, the semiconductor having an electric field-dependent resonance wavelength;
a first electrode electrically connected to the semiconductor layer;
a first insulating layer adjacent to the first surface of the semiconductor layer, and a second insulating layer adjacent to the second surface of the semiconducting layer, the first and the second insulating layers each being optically transparent at the resonance wavelength;
a first group of at least one gate electrodes disposed adjacent to the first insulating layer, and a second group of at least one gate electrodes disposed adjacent to the second insulating layer, each gate electrode being at least 80% optically transparent at the resonance wavelength, wherein
the first and the second groups of gate electrodes, taken together, form at least two regions in the semiconductor layer, an electrostatic field in each of the at least two regions being independently controllable by application of voltage to the first and the second groups of gate electrodes, the at least two regions abutting each other along at least one boundary, the method comprising:
applying a first voltage to the first group of gate electrodes and, optionally, applying a second voltage to the second group of gate electrodes, wherein the second voltage, if applied, is different from the first voltage,
thereby shifting the resonance wavelength within the first region, and, optionally, the second region.
12. A method of changing an angle of reflection of an optical beam, the method comprising:
directing an optical beam at an optical device comprising:
a semiconductor layer having a first surface and a second surface, the semiconductor having an electric field-dependent resonance wavelength;
a first electrode electrically connected to the semiconductor layer;
a first insulating layer adjacent to the first surface of the semiconductor layer, and a second insulating layer adjacent to the second surface of the semiconducting layer, the first and the second insulating layers each being optically transparent at the resonance wavelength;
a first group of at least one gate electrodes disposed adjacent to the first insulating layer, and a second group of at least one gate electrodes disposed adjacent to the second insulating layer, each gate electrode being at least 80% optically transparent at the resonance wavelength, wherein
the first and the second groups of gate electrodes, taken together, form at least two regions in the semiconductor layer, an electrostatic field in each of the at least two regions being independently controllable by application of voltage to the first and the second groups of gate electrodes, the at least two regions abutting each other along at least one boundary, wherein the optical beam is directed at the at least one boundary; and
applying a first voltage to the first group of gate electrodes and, optionally, applying a second voltage to the second group of gate electrodes, wherein the second voltage, if applied, is different from the first voltage.
13. The method of claim 11 , wherein at least one of the first voltage and, if applied, the second voltage, is time-variable.
14. The method of claim 1 , wherein at least one of the first voltage and, if applied, the second voltage, is periodic.
15. An optical device, comprising:
a semiconductor layer having a first surface and a second surface, the semiconductor having an electric field-dependent resonance wavelength;
a first electrode electrically connected to the semiconductor layer;
a first insulating layer adjacent to the first surface of the semiconductor layer, and a second insulating layer adjacent to the second surface of the semiconducting layer, the first and the second insulating layers each being optically transparent at the resonance wavelength;
a first group of at least one gate electrodes disposed adjacent to the first insulating layer, and a second group of at least one gate electrodes disposed adjacent to the second insulating layer, each gate electrode being at least 80% optically transparent at the resonance wavelength, wherein
the first and the second groups of gate electrodes, taken together, form at least two regions in the semiconductor layer, an electrostatic field in each of the at least two regions being independently controllable by application of voltage to the first and the second groups of gate electrodes, the at least two regions abutting each other along at least one boundary;
at least one voltage source electrically connected to the first and second groups of gate electrodes;
a computing node, operatively coupled to the at least one voltage source, the computing node configured to cause the at least one voltage source to apply a first voltage to the first group of gate electrodes and, optionally, to apply a second voltage to the second group of gate electrodes, wherein the second voltage, if applied, is different from the first voltage,
thereby shifting the resonant wavelength within the first region, and, optionally, the second region.